STE36N50-DA N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE TYPE STE36N50-DA V DSS R DS( on) ID 500 V < 0.14 Ω 36 A 4 ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743) 3 1 2 ISOTOP INTERNAL SCHEMATIC DIAGRAM INDUSTRIAL APPLICATIONS: ■ SMPS & UPS ■ MOTOR CONTROL ■ WELDING EQUIPMENT ■ ASYMMETRICAL HALF BRIDGE SMPS (WITH COMPLIMENTARY STE36N50-DK) MOSFET ABSOLUTE MAXIMUM RATINGS Symbol VD S V DG R V GS Parameter Value Unit Drain-Source Voltage (V GS = 0) 500 V Drain-Gate Voltage (RGS = 20 kΩ) 500 V ± 20 V 36 A Gate-Source Voltage o ID Drain Current (continuous) at T c = 25 C ID o ID M(•) P tot T stg Tj V ISO Drain Current (continuous) at T c = 100 C 24 A Drain Current (pulsed) 144 A Total Dissipation at Tc = 25 o C 380 W Derating Factor 3.3 W/o C -55 to 150 o C Max. Operating Junction Temperature 150 o C Insulation Withstand Voltage (AC-RMS) 2500 Storage Temperature V (•) Pulse width limited by safe operating area September 1994 1/9 STE36N50-DA DIODE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Valu e Unit V RRM Repetitive Peak Reverse Voltage 600 V V RS M Non Repetitive Peak Reverse Voltage 600 V RMS Forward Current 50 A 300 A 70 W 0.56 W/ o C Max Max 0.3 1.78 o Max 0.05 o I F(RMS ) I FRM P to t Repet. Peak Forward Current (t p = 5 µs, f = 5KHz) o Total Dissipation at Tc = 25 C Derating Factor THERMAL DATA R thj-cas e R thj-cas e R thc-h Thermal Resistance Junction-case (MOSFET) Thermal Resistance Junction-case (DIO DE) Thermal Resistance Case-heatsink With Conductive Grease Applied o C/W C/W C/W AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit IA R Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) 14 A E AS Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR, VD D = 50 V) 100 mJ E AR Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) 40 mJ IA R Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) 9 A MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbol V( BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 1 mA V GS = 0 I DS S Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 IG SS Gate-body Leakage Current (V D S = 0) Min. Typ. Max. 500 Unit V 300 1500 µA µA ± 300 nA Max. Unit 3 4 V 0.12 0.14 0.28 Ω Ω T c = 125 oC V GS = ± 20 V ON (∗) Symbol Parameter Test Conditions V G S(th) Gate Threshold Voltage V DS = V GS R DS( on) Static Drain-source On Resistance V GS = 10V ID = 18 A V GS = 10V I D = 18 A I D( on) On State Drain Current V DS > ID( on) x RD S(on) max V GS = 10 V 2/9 ID = 1 mA Min. 2 T c = 100 oC 36 Typ. A STE36N50-DA MOSFET ELECTRICAL CHARACTERISTICS (continued) DYNAMIC Symbol gfs (∗) C iss C oss Crss Parameter Test Conditions Forward Transconductance V DS > ID (on) x R DS(on)max Input Capacitance Output Capacitance Reverse Transfer Capacitance V DS = 25 V f = 1 MHz I D = 18 A Min. Typ. Max. 16 Unit S V GS = 0 8000 1300 350 pF pF pF Typ. Max. Unit 65 120 ns ns SWITCHING ON Symbol t d(on) tr (di/dt) on Qg Q gs Q gd Parameter Test Conditions Min. Turn-on Time Rise Time V DD = 250 V I D = 18 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 1) 45 85 Turn-on Current Slope V DD = 400 V I D = 36 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) 700 A/µs Total Gate Charge Gate-Source Charge Gate-Drain Charge V DD = 400 V 295 35 145 nC nC nC ID = 36 A VG S = 10 V SWITCHING OFF Symbol t r(Vof f) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions Min. V DD = 400 V I D = 36 A R G = 4.7 Ω V GS = 10 V (see test circuit, figure 3) Typ. Max. Unit 100 45 160 140 65 225 ns ns ns Typ. Max. Unit 36 144 A A 1.4 V SOURCE DRAIN DIODE Symbol Parameter Test Conditions IS D I SDM(•) Source-drain Current Source-drain Current (pulsed) V S D (∗) Forward On Voltage I SD = 36 A Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 36 A di/dt = 100 A/µs T j = 150 o C V DD = 100 V (see test circuit, figure 3) t rr Q rr I RRM Min. VG S = 0 1 µs 29 µC 58 A (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area 3/9 STE36N50-DA DIODE ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) STATIC Symbol Parameter Test Conditions Min. Typ. T j = 25 o C T j = 125 o C V F (#) Forward Voltage Drop IF = 20 A IF = 20 A I R (##) Reverse Leakage Current V R = VR RM x 0.8 V R = VR RM x 0.8 T j = 25 o C T J = 125 o C Max. Unit 1.75 1.5 V V 100 6 µA mA Max. Unit DINAMIC Symbol t rr Parameter Reverse Recovery Time Test Conditions I F = 0.5 A T j = 25 o C IF = 1 A V R = 30 v I RM Maximum Reverse Recovery Current IR= 1 A Min. I rr = 0.25 A Typ. 30 di F/dt = -50 A/µs Tj = 25 oC V R = 400 V IF = 20 A di F/dt = -160 A/µs di F/dt = -500 A/µs ns 60 ns 12.5 A A Max. Unit 600 ns 12 V Tj = 125 oC 17.5 TURN-ON SWITCHING Symbol t fr V FP Parameter Forward Recovery Time Peak Forward Voltage Test Conditions Min. I F = 20 A di F/dt = 160 A/µs Measured at: 1.1 x V f(MAX) T j = 25 o C (#) Pulsed: Pulse duration = 380 µs, duty cycle < 2 % (##) Pulsed: Pulse duration = 5 µs, duty cycle < 2 % NOTE: For the complete DIODE characterization refer to STTA2006P datasheet Safe Operating Areas 4/9 Thermal Impedance Typ. STE36N50-DA Derating Curve Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage 5/9 STE36N50-DA Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized Breakdown Voltage vs Temperature Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-source Voltage Slope 6/9 STE36N50-DA Cross-over Time Source-drain Diode Forward Characteristics Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge Test Circuit Fig. 3: Test Circuit For Inductive Load Switching And Diode Recovery Times 7/9 STE36N50-DA ISOTOP MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 11.8 12.2 0.466 0.480 B 8.9 9.1 0.350 0.358 C 1.95 2.05 0.076 0.080 D 0.75 0.85 0.029 0.033 E 12.6 12.8 0.496 0.503 F 25.15 25.5 0.990 1.003 G 31.5 31.7 1.240 1.248 H 4 J 4.1 4.3 0.161 0.169 K 14.9 15.1 0.586 0.594 L 30.1 30.3 1.185 1.193 M 37.8 38.2 1.488 1.503 N 4 O 7.8 P 5.5 0.157 0.157 8.2 0.307 0.322 0.216 A G B O F E H D N J C K L M 8/9 0041565 STE36N50-DA Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 9/9