STMICROELECTRONICS STE36N50-DK

STE36N50-DK
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE
TYPE
STE36N50-DK
V DSS
R DS( on)
ID
500 V
< 0.14 Ω
36 A
4
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■
■
■
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■
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■
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DEDICATED FOR POWER FACTOR
CORRECTOR APPLICATIONS
LOW GATE CHARGE MOSFET
TURBOSWITCH DIODE INCORPORATED
HIGH CURRENT POWER MODULE
AVALANCHE RUGGED TECHNOLOGY
VERY LARGE SOA - LARGE PEAK POWER
CAPABILITY
EASY TO MOUNT
EXTREMELY LOW Rth JUNCTION TO CASE
VERY LOW DRAIN TO CASE CAPACITANCE
VERY LOW INTERNAL PARASITIC
INDUCTANCE (TYPICALLY < 5 nH)
ISOLATED PACKAGE UL RECOGNIZED
(FILE No E81743)
3
1
2
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
INDUSTRIAL APPLICATIONS:
SMPS & UPS
■
MOTOR CONTROL
■
WELDING EQUIPMENT
■
POWER FACTOR CORRECTOR
■
ASYMMETRICAL HALF BRIDGE SMPS
(WITH COMPLIMENTARY STE36N50-DA)
■
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol
VD S
V DG R
V GS
Parameter
Value
Unit
Drain-Source Voltage (V GS = 0)
500
V
Drain-Gate Voltage (RGS = 20 kΩ)
500
V
± 20
V
36
A
Gate-Source Voltage
o
ID
Drain Current (continuous) at T c = 25 C
ID
o
ID M(•)
P tot
T stg
Tj
V ISO
Drain Current (continuous) at T c = 100 C
24
A
Drain Current (pulsed)
144
A
Total Dissipation at Tc = 25 o C
380
W
Derating Factor
3.3
W/o C
-55 to 150
o
C
Max. Operating Junction Temperature
150
o
C
Insulation Withstand Voltage (AC-RMS)
2500
Storage Temperature
V
(•) Pulse width limited by safe operating area
September 1994
1/9
STE36N50-DK
DIODE ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
Unit
V RRM
Repetitive Peak Reverse Voltage
600
V
V RS M
Non Repetitive Peak Reverse Voltage
600
V
RMS Forward Current
50
A
300
A
70
W
0.56
W/ o C
Max
Max
0.3
1.78
o
Max
0.05
o
I F(RMS )
I FRM
P to t
Repet. Peak Forward Current (t p = 5 µs, f = 5KHz)
o
Total Dissipation at Tc = 25 C
Derating Factor
THERMAL DATA
R thj-cas e
R thj-cas e
R thc-h
Thermal Resistance Junction-case (MOSFET)
Thermal Resistance Junction-case (DIO DE)
Thermal Resistance Case-heatsink With Conductive
Grease Applied
o
C/W
C/W
C/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IA R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
14
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, ID = I AR, VD D = 50 V)
100
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max, δ < 1%)
40
mJ
IA R
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ < 1%)
9
A
MOSFET ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V( BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 1 mA
V GS = 0
I DS S
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
IG SS
Gate-body Leakage
Current (V D S = 0)
Min.
Typ.
Max.
500
Unit
V
300
1500
µA
µA
± 300
nA
Max.
Unit
3
4
V
0.12
0.14
0.28
Ω
Ω
T c = 125 oC
V GS = ± 20 V
ON (∗)
Symbol
Parameter
Test Conditions
V G S(th)
Gate Threshold Voltage V DS = V GS
R DS( on)
Static Drain-source On
Resistance
V GS = 10V ID = 18 A
V GS = 10V I D = 18 A
I D( on)
On State Drain Current
V DS > ID( on) x RD S(on) max
V GS = 10 V
2/9
ID = 1 mA
Min.
2
T c = 100 oC
36
Typ.
A
STE36N50-DK
MOSFET ELECTRICAL CHARACTERISTICS (continued)
DYNAMIC
Symbol
gfs (∗)
C iss
C oss
Crss
Parameter
Test Conditions
Forward
Transconductance
V DS > ID (on) x R DS(on)max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
I D = 18 A
Min.
Typ.
Max.
16
Unit
S
V GS = 0
8000
1300
350
pF
pF
pF
Typ.
Max.
Unit
65
120
ns
ns
SWITCHING ON
Symbol
t d(on)
tr
(di/dt) on
Qg
Q gs
Q gd
Parameter
Test Conditions
Min.
Turn-on Time
Rise Time
V DD = 250 V I D = 18 A
R G = 4.7 Ω
V GS = 10 V
(see test circuit, figure 1)
45
85
Turn-on Current Slope
V DD = 400 V I D = 36 A
R G = 4.7 Ω
V GS = 10 V
(see test circuit, figure 3)
700
A/µs
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = 400 V
295
35
145
nC
nC
nC
ID = 36 A
VG S = 10 V
SWITCHING OFF
Symbol
t r(Vof f)
tf
tc
Parameter
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
Min.
V DD = 400 V I D = 36 A
R G = 4.7 Ω V GS = 10 V
(see test circuit, figure 3)
Typ.
Max.
Unit
100
45
160
140
65
225
ns
ns
ns
Typ.
Max.
Unit
36
144
A
A
1.4
V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
IS D
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V S D (∗)
Forward On Voltage
I SD = 36 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 36 A di/dt = 100 A/µs
T j = 150 o C
V DD = 100 V
(see test circuit, figure 3)
t rr
Q rr
I RRM
Min.
VG S = 0
1
µs
29
µC
58
A
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
3/9
STE36N50-DK
DIODE ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
STATIC
Symbol
Parameter
Test Conditions
Min.
Typ.
T j = 25 o C
T j = 125 o C
V F (#)
Forward Voltage Drop
IF = 20 A
IF = 20 A
I R (##)
Reverse Leakage
Current
V R = VR RM x 0.8
V R = VR RM x 0.8
T j = 25 o C
T J = 125 o C
Max.
Unit
1.75
1.5
V
V
100
6
µA
mA
Max.
Unit
DINAMIC
Symbol
t rr
Parameter
Reverse Recovery
Time
Test Conditions
I F = 0.5 A
T j = 25 o C
IF = 1 A
V R = 30 v
I RM
Maximum Reverse
Recovery Current
IR= 1 A
Min.
I rr = 0.25 A
Typ.
30
di F/dt = -50 A/µs
Tj = 25 oC
V R = 400 V IF = 20 A
di F/dt = -160 A/µs
di F/dt = -500 A/µs
ns
60
ns
12.5
A
A
Max.
Unit
600
ns
12
V
Tj = 125 oC
17.5
TURN-ON SWITCHING
Symbol
t fr
V FP
Parameter
Forward Recovery
Time
Peak Forward Voltage
Test Conditions
Min.
I F = 20 A di F/dt = 160 A/µs
Measured at: 1.1 x V f(MAX)
T j = 25 o C
(#) Pulsed: Pulse duration = 380 µs, duty cycle < 2 %
(##) Pulsed: Pulse duration = 5 µs, duty cycle < 2 %
NOTE: For the complete DIODE characterization refer to STTA2006P datasheet
Safe Operating Areas
4/9
Thermal Impedance
Typ.
STE36N50-DK
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
5/9
STE36N50-DK
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized Breakdown Voltage vs Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
6/9
STE36N50-DK
Cross-over Time
Source-drain Diode Forward Characteristics
Fig. 1: Switching Times Test Circuits For
Resistive Load
Fig. 2: Gate Charge Test Circuit
Fig. 3: Test Circuit For Inductive Load Switching
And Diode Recovery Times
7/9
STE36N50-DK
ISOTOP MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
11.8
12.2
0.466
0.480
B
8.9
9.1
0.350
0.358
C
1.95
2.05
0.076
0.080
D
0.75
0.85
0.029
0.033
E
12.6
12.8
0.496
0.503
F
25.15
25.5
0.990
1.003
G
31.5
31.7
1.240
1.248
H
4
J
4.1
4.3
0.161
0.169
K
14.9
15.1
0.586
0.594
L
30.1
30.3
1.185
1.193
M
37.8
38.2
1.488
1.503
N
4
O
7.8
P
5.5
0.157
0.157
8.2
0.307
0.322
0.216
A
G
B
O
F
E
H
D
N
J
C
K
L
M
8/9
0041565
STE36N50-DK
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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