STL70N4LLF5 N-channel 40 V, 0.0055 Ω, 18 A, PowerFLAT™ (6x5) STripFET™ V Power MOSFET Preliminary Data Features Type VDSS RDS(on) max ID STL70N4LLF5 40 V 0.0065 Ω 18 A (1) 1. The value is rated according Rthj-pcb ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses PowerFLAT™ ( 6x5 ) Application ■ Switching applications Figure 1. Description Internal schematic diagram This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in this chip scale package, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1. Device summary Order code Marking Package Packaging STL70N4LLF5 70N4LLF5 PowerFLAT™ (6x5) Tape and reel December 2008 Rev 1 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. 1/10 www.st.com 10 Contents STL70N4LLF5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 .............................................. 6 STL70N4LLF5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit 40 V ± 22 V VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25 °C 70 A ID (1) Drain current (continuous) at TC = 100 °C 44 A ID(2) Drain current (continuous) at TC = 25 °C 18 A (3) Drain current (continuous) at TC=100 °C 11.5 A (3) Drain current (pulsed) 72 A PTOT (1) Total dissipation at TC = 25 °C 60 W (2) Total dissipation at TC = 25 °C 4 W 0.03 W/°C -55 to 150 °C ID IDM PTOT Derating factor TJ Operating junction temperature Storage temperature Tstg 1. The value is rated according Rthj-c 2. The value is rated according Rthj-pcb 3. Pulse width limited by safe operating area Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case (drain) (steady state) 2.08 °C/W Thermal resistance junction-ambient 31.3 °C/W Value Unit Rthj-pcb (1) 1. When mounted on FR-4 board of 1inch², 2oz Cu, t < 10 sec Table 4. Symbol Avalanche data Parameter IAV Not-repetitive avalanche current, (pulse width limited by Tj Max) TBD A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAV , VDD = 24 V) TBD mJ 3/10 Electrical characteristics 2 STL70N4LLF5 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS= 0 Zero gate voltage drain current (VGS = 0) IGSS Gate body leakage current (VDS = 0) VGS = ±22 V VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 9 A Symbol Ciss Coss Crss Qg Typ. Max. 40 V VDS = Max rating @125 °C 1 10 µA µA ±100 nA 1 VGS= 4.5 V, ID= 9 A Unit V 0.0055 TBD 0.0065 0.009 Typ. Max. Ω Ω Dynamic Parameter Input capacitance Output capacitance Reverse transfer capacitance Qgd Total gate charge Gate-source charge Gate-drain charge RG Gate input resistance Qgs Min. VDS = Max rating, IDSS Table 6. 4/10 On/off states Test conditions VDS = 25 V, f=1 MHz, VGS=0 VDD=15 V, ID = 18 A VGS = 4.5 V (see Figure 3) f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain Min. Unit 1800 270 40 pF pF pF 13 TBD TBD nC nC nC TBD Ω STL70N4LLF5 Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. TBD TBD TBD TBD VDD=15 V, ID= 9A, RG=4.7 Ω, VGS=10 V (see Figure 2) Unit ns ns ns ns Source drain diode Max Unit Source-drain current 18 A ISDM(1) Source-drain current (pulsed) 72 A VSD(2) Forward on voltage ISD = 18A, VGS=0 1.1 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 18A, ISD trr Qrr IRRM Parameter Test conditions di/dt = 100 A/µs, VDD= 25 V Min Typ. TBD TBD TBD ns nC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% 5/10 Test circuits STL70N4LLF5 3 Test circuits Figure 2. Switching times test circuit for resistive load Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit Figure 6. Unclamped inductive waveform Switching time waveform 6/10 Figure 3. Figure 7. Gate charge test circuit STL70N4LLF5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 7/10 Package mechanical data STL70N4LLF5 PowerFLAT™(6x5) mechanical data mm. DIM. Min. A Min. 0.031 0.83 0.93 0.02 0.05 A3 0.20 0.35 D D2 0.40 0.47 0.013 4.20 0.32 0.036 0.0007 0.0019 0.015 0.163 0.165 E 6.00 0.236 5.75 0.226 E2 3.43 3.48 3.53 E4 2.58 2.63 2.68 0.70 0.80 L 0.018 0.187 4.25 E1 e Max. 0.196 4.75 4.15 Typ. 0.007 5.00 D1 8/10 inch Max. A1 b 0.80 Typ. 0.135 1.27 0.167 0.137 0.139 0.103 0.105 0.050 0.90 0.027 0.031 0.035 STL70N4LLF5 5 Revision history Revision history Table 9. Document revision history Date Revision 01-Dec-2008 1 Changes First release 9/10 STL70N4LLF5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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