STP95N04 STD95N04 N-CHANNEL 40V - 5.4mΩ - 80A - DPAK - TO-220 STripFET™ Power MOSFET General features Type VDSS RDS(on) ID Pw STD95N04 STP95N04 40V 40V <6.5mΩ <6.5mΩ 80A 80A 110W 110W 3 ■ 1 STANDARD THRESHOLD DRIVE 3 1 ■ 100% AVALANCHE TESTED DPAK 2 TO-220 Description This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. Internal schematic diagram Applications ■ HIGH CURRENT,SWITCHING APPLICATION ■ AUTOMOTIVE Order codes Sales Type Marking Package Packaging STD95N04 D95N04 DPAK TAPE & REEL STP95N04 P95N04 TO-220 TUBE December 2005 Rev 3 1/14 www.st.com 14 STD95N04 - STP95N04 1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source Voltage (VGS=0) VGS Gate-Source Voltage Value Unit 40 V ± 20 V ID Note 1 Drain Current (continuous) at TC = 25°C 80 A ID Drain Current (continuous) at TC = 100°C 65 A Drain Current (pulsed) 320 A Total Dissipation at TC = 25°C 110 W Derating Factor 0.73 W/°C 8 V/ns IDM Note 2 PTOT dv/dt Note 3 Peak Diode Recovery voltage slope EAS Note 4 Single Pulse Avalanche Energy 400 mJ Tj Operating Junction Temperature Storage Temperature -55 to 175 °C Tstg Table 2. Thermal data TO-220 Rthj-case Thermal Resistance Junction-case Max DPAK 1.36 °C/W Rthj-a Thermal Resistance Junction-ambient Max 62.5 -- °C/W Rthj-pcb Note 5 Thermal Resistance Junction-ambient Max -- 50 °C/W Tl Maximum Lead Temperature For Soldering Purpose 300 -- °C 2/14 STD95N04 - STP95N04 2 2 Electrical characteristics Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 3. On/off states Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current (VGS = 0) IGSS Test Conditions ID = 250µA, V GS= 0 Min. Typ. Max. 40 Unit V VDS = Max Rating, VDS = Max Rating,Tc = 125°C 10 100 µA µA Gate Body Leakage Current (VDS = 0) VGS = ±20V ±200 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID = 250µA 4 V RDS(on) Static Drain-Source On Resistance VGS= 10V, ID= 40A 5.4 6.5 mΩ Typ. Max. Unit Table 4. Symbol gfs Note 6 Ciss Coss Crss Qg Qgs Qgd 2 Dynamic Parameter Forward Transconductance Test Conditions VDS =25V, ID=40A Input Capacitance VDS =25V, f=1 MHz, V GS=0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=20V, ID = 80A VGS =10V (see Figure 13) Min. 100 S 2200 580 40 pF pF pF 40 11 8 54 nC nC nC 3/14 STD95N04 - STP95N04 2 Electrical characteristics Table 5. Symbol td(on) tr td(off) tf Table 6. Switching times Parameter Test Conditions VDD=20V, ID= 40A, Turn-on Delay Time Rise Time RG=4.7Ω, VGS=10V Turn-off Delay Time FallTime RG=4.7Ω, VGS=10V (see Figure 12) VDD=20V, ID= 40A, (see Figure 12) Parameter ISD ISDM Note 2 Source-drain Current Source-drain Current (pulsed) VSDNote 6 Forward on Voltage ISD=80A, V GS=0 Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD=80A, di/dt = 100A/µs, VDD=30V, Tj=150°C trr IRRM Test Conditions (1) Current limited by package (2) Pulse width limited by safe operating area (3) ISD ≤ 80 A, di/dt ≤ 400A/µs, VDS ≤ V(BR)DSS, Tj≤ Tjmax (4) Starting Tj=25°C, Id =40A, Vdd=30V (5) When mounted on 1inch² FR4 2Oz Cu board (6)Pulsed: pulse duration = 300µs, duty cycle 1.5% 4/14 Typ. Max. Unit 15 50 ns ns 40 15 ns ns Source drain diode Symbol Qrr Min. Min. Typ. 45 60 2.8 Max. Unit 80 320 A A 1.5 V ns nC A STD95N04 - STP95N04 2.1 2 Electrical characteristics Electrical characteristics (curves) Figure 1. Safe Operating Area Figure 2. Thermal Impedance Figure 3. Output Characteristics Figure 4. Transfer Characteristics Figure 5. Static Drain-source on Resistance Figure 6. Normalized BVDSS vs Temperature 5/14 2 Electrical characteristics STD95N04 - STP95N04 Figure 7. Gate Charge vs Gate-source Voltage Figure 8. Figure 9. Normalized Gate Threshold Voltage Figure 10. Normalized on Resistance vs vs Temperature Temperature Figure 11. Source-drain Diode Forward Characteristics 6/14 Capacitance Variations STD95N04 - STP95N04 3 3 Test circuits Test circuits Figure 12. Switching Times Test Circuit for Resistive Load Figure 13. Gate Charge Test Circuit Figure 14. Test Circuit for Inductive Load Switching and Diode Recovery Times Figure 15. Unclamped Inductive Load Test Circuit Figure 16. Unclamped Inductive Waveform Figure 17. Switching Time Waveform 7/14 3 Test circuits Figure 18. Diode Reverse Recovery Waveform 8/14 STD95N04 - STP95N04 STD95N04 - STP95N04 4 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 STD95N04 - STP95N04 4 Package mechanical data TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 L2 0.8 0.398 0.031 L4 0.60 1.00 0.024 0.039 V2 0o 8o 0o 0o P032P_B 10/14 STD95N04 - STP95N04 4 Package mechanical data TO-220 MECHANICAL DATA DIM. mm. MIN. TYP inch MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 D 15.25 15.75 0.60 0.620 E 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 F 1.23 1.32 0.048 0.052 H1 6.20 6.60 0.244 0.256 J1 2.40 2.72 0.094 0.107 0.551 L 13 14 0.511 L1 3.50 3.93 0.137 L20 16.40 L30 0.154 0.645 28.90 1.137 øP 3.75 3.85 0.147 0.151 Q 2.65 2.95 0.104 0.116 11/14 STD95N04 - STP95N04 5 Packing mechanical data 5 Packing mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 12/14 inch 1.5 D1 1.5 E 1.65 MIN. MAX. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 0.059 F 7.4 7.6 0.291 0.299 K0 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 R 40 W 15.7 1.574 16.3 0.618 0.641 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 STD95N04 - STP95N04 6 6 Revision History Revision History Date Revision Changes 24-Oct-2005 2 Inserted ecopack indication 07-Dec-2005 3 Complete version 13/14 STD95N04 - STP95N04 6 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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