STMICROELECTRONICS STP20N20

STP20N20
STF20N20 - STD20N20
N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK
LOW GATE CHARGE STripFET™ II MOSFET
Figure 1: Package
Table 1: General Features
TYPE
STD20N20
STF20N20
STP20N20
■
■
■
■
VDSS
RDS(on)
Id
PTOT
200 V
200 V
200 V
< 0.125 Ω
< 0.125 Ω
< 0.125 Ω
18 A
18 A
18 A
90 W
25 W
90 W
TYPICAL RDS(on) = 0.10 Ω
EXCEPTIONAL dv/dt CAPABILITY
LOW GATE CHARGE
100% AVALANCHE TESTED
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STripFET process has specifically
been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters.
3
3
1
2
1
2
TO-220FP
TO-220
3
1
DPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH CURRENT SWITCHING
APPLICATIONS
■ HIGH EFFICIENCY DC-DC CONVERTERS
■ PRIMARY SIDE SWITCH
Table 2: Order Codes
SALES TYPE
MARKING
PACKAGE
PACKAGING
STD20N20T4
D20N20
DPAK
TAPE & REEL
STF20N20
F20N20
TO-220FP
TUBE
STP20N20
P20N20
TO-220
TUBE
Rev. 3
January 2005
1/13
STP20N20 - STF20N20 - STD20N20
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
TO-220/DPAK
VDS
VDGR
VGS
ID
ID
Unit
TO-220FP
Drain-source Voltage (VGS = 0)
200
V
Drain-gate Voltage (RGS = 20 kΩ)
200
V
Gate- source Voltage
± 20
V
18
A
Drain Current (continuous) at TC = 25°C
Drain Current (continuous) at TC = 100°C
11
A
IDM ()
Drain Current (pulsed)
72
A
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1)
Tj
Tstg
90
25
W
0.72
0.2
W/°C
Peak Diode Recovery voltage slope
Operating Junction Temperature
Storage Temperature
15
V/ns
-50 to 150
°C
() Pulse width limited by safe operating area
(1) ISD ≤ 18A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS
Table 4: Thermal Data
TO-220
DPAK
TO-220FP
Rthj-case
Thermal Resistance Junction-case Max
1.38
1.38
5
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
50(#)
62.5
°C/W
Tl
Maximum Lead Temperature For Soldering
Purpose
300
°C
(#) When mounted on 1inch² FR-4, 2 Oz copper board.
Table 5: Avalanche Characteristics
Symbol
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Parameter
18
A
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
110
mJ
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Test Conditions
Drain-source
Breakdown Voltage
ID = 1 mA, VGS = 0
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating, TC = 125 °C
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 20V
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-source On
Resistance
VGS = 10V, ID = 10 A
V(BR)DSS
2/13
Parameter
Min.
Typ.
Max.
200
2
Unit
V
1
10
µA
µA
±100
nA
3
4
V
0.10
0.125
Ω
STP20N20 - STF20N20 - STD20N20
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
gfs (1)
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Forward Transconductance
VDS = 25 V, ID= 10 A
13
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
940
197
30
pF
pF
pF
td(on)
tr
td(off)
tr
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
VDD = 100 V, ID = 10 A,
RG= 4.7 Ω VGS = 10 V
(see Figure 17)
15
30
40
10
ns
ns
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 160V, ID = 20 A,
VGS = 10V
(see Figure 20)
28
5.6
14.5
39
nC
nC
nC
Typ.
Max.
Unit
18
72
A
A
1.6
V
Table 8: Source Drain Diode
Symbol
Parameter
ISD
ISDM (2)
Source-drain Current
Source-drain Current (pulsed)
VSD (1)
Forward On Voltage
ISD = 20 A, VGS = 0
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs
VDD = 50V, Tj = 25°C
(see Figure 18)
155
775
10
ns
nC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 20 A, di/dt = 100A/µs
VDD = 50V, Tj = 150°C
(see Figure 18)
183
1061
11.6
ns
nC
A
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
Min.
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
3/13
STP20N20 - STF20N20 - STD20N20
Figure 3: Safe Operating Area For TO-220/
DPAK
Figure 6: Thermal Impedance For TO-220/
DPAK
Figure 4: Safe Operating Area For TO-220FP
Figure 7: Thermal Impedance For TO-220FP
Figure 5: Output Characteristics
Figure 8: Transfer Characteristics
4/13
STP20N20 - STF20N20 - STD20N20
Figure 9: Transconductance
Figure 12: Static Drain-source On Resistance
Figure 10: Gate Charge vs Gate-source Voltage
Figure 13: Capacitance Variations
Figure 11: Normalized Gate Threshold Voltage
vs Temperature
Figure 14: Normalized On Resistance vs Temperature
5/13
STP20N20 - STF20N20 - STD20N20
Figure 15: Source-Drain Forward Characteristics
6/13
STP20N20 - STF20N20 - STD20N20
Figure 16: Unclamped Inductive Load Test Circuit
Figure 19: Unclamped Inductive Wafeform
Figure 17: Switching Times Test Circuit For
Resistive Load
Figure 20: Gate Charge Test Circuit
Figure 18: Test Circuit For Inductive Load
Switching and Diode Recovery Times
7/13
STP20N20 - STF20N20 - STD20N20
TO-220 MECHANICAL DATA
DIM.
8/13
mm.
MIN.
TYP
inch
MAX.
MIN.
A
4.40
4.60
0.173
TYP.
MAX.
0.181
b
0.61
0.88
0.024
0.034
b1
1.15
1.70
0.045
0.066
c
0.49
0.70
0.019
0.027
D
15.25
15.75
0.60
0.620
E
10
10.40
0.393
0.409
e
2.40
2.70
0.094
0.106
e1
4.95
5.15
0.194
0.202
F
1.23
1.32
0.048
0.052
H1
6.20
6.60
0.244
0.256
J1
2.40
2.72
0.094
0.107
L
13
14
0.511
0.551
L1
3.50
3.93
0.137
0.154
L20
16.40
0.645
L30
28.90
1.137
øP
3.75
3.85
0.147
0.151
Q
2.65
2.95
0.104
0.116
STP20N20 - STF20N20 - STD20N20
TO-220FP MECHANICAL DATA
mm.
DIM.
MIN.
inch
TYP
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
L3
28.6
30.6
1.126
1.204
L4
9.8
10.6
.0385
0.417
L5
2.9
3.6
0.114
0.141
L6
15.9
16.4
0.626
0.645
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L7
L3
L6
F2
H
G
G1
F
F1
L7
L2
L5
1 2 3
L4
9/13
STP20N20 - STF20N20 - STD20N20
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
A
2.20
2.40
0.087
TYP.
MAX.
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
10/13
STP20N20 - STF20N20 - STD20N20
DPAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
All dimensions
are in millimeters
All dimensions are in millimeters
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
DIM.
mm
MIN.
A
B
DIM.
mm
inch
MIN.
MAX.
A0
6.8
7
0.267 0.275
B0
10.4
10.6
0.409 0.417
B1
D
1.5
MIN.
12.1
0.476
1.6
0.059 0.063
1.5
E
1.65
1.85
0.065 0.073
F
7.4
7.6
0.291 0.299
1.5
C
12.8
D
20.2
G
16.4
N
50
K0
2.55
2.75
0.100 0.108
3.9
4.1
0.153 0.161
P1
7.9
8.1
0.311 0.319
P2
1.9
2.1
0.075 0.082
40
15.7
MAX.
12.992
0.059
13.2
0.504 0.520
18.4
0.645 0.724
0.795
1.968
22.4
0.881
BASE QTY
BULK QTY
2500
2500
0.059
P0
R
MIN.
MAX.
D1
W
MAX.
330
T
TAPE MECHANICAL DATA
inch
1.574
16.3
0.618
0.641
* on sales type
11/13
STP20N20 - STF20N20 - STD20N20
Table 9: Revision History
Date
Revision
06-Dec-2004
07-Dec-2004
12-Jan-2005
1
2
3
12/13
Description of Changes
Data Brief
First Revision
Final datasheet
STP20N20 - STF20N20 - STD20N20
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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