FAIRCHILD 2N7002W_10

2N7002W
N-Channel Enhancement Mode Field Effect Transistor
Features
•
•
•
•
•
•
•
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free/RoHS Compliant
D
S
G
SOT-323
Marking : 2N
Absolute Maximum Ratings *
Symbol
TA = 25°C unless otherwise noted
Value
Units
VDSS
Drain-Source Voltage
60
V
VDGR
Drain-Gate Voltage RGS  1.0M
60
V
VGSS
Gate-Source Voltage
Continuous
Pulsed
±20
±40
V
Continuous
Continuous @ 100°C
Pulsed
115
73
800
mA
-55 to +150
C
ID
TJ , TSTG
Parameter
Drain Current
Junction and Storage Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
PD
RJA
Parameter
Value
Units
Total Device Dissipation
Derating above TA = 25°C
200
1.6
mW
mW/C
Thermal Resistance, Junction to Ambient *
625
C/W
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
© 2010 Fairchild Semiconductor Corporation
2N7002W Rev. A1
www.fairchildsemi.com
1
2N7002W — N-Channel Enhancement Mode Field Effect Transistor
February 2010
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Condition
Min.
Typ.
Max.
Units
60
78
-
V
-
0.001
7
1.0
500
A
VGS=±20V, VDS=0V
-
0.2
±10
nA
1.0
Off Characteristics (Note1)
BVDSS
IDSS
Drain-Source Breakdown Voltage VGS=0V, ID=10uA
Zero Gate Voltage Drain Current VDS=60V, VGS=0V
VDS=60V, VGS=0V, @TC=125C
IGSS
Gate-Body Leakage
On Characteristics (Note1)
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250A
1.76
2.0
V
RDS(ON)
Static Drain-Source
On-Resistance
-
1.6
2.53
7.5
13.5

On-State Drain Current
VGS=5V, ID=0.05A,
VGS=10V, ID=0.5A, @TJ=125°C
VGS=10V, VDS=7.5V
0.5
1.43
-
A
Forward Transconductance
VDS=10V, ID=0.2A
80
356.5
-
mS
-
37.8
50
pF
-
12.4
25
pF
-
6.5
7.0
pF
-
5.85
20
-
12.5
20
ID(ON)
gFS
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=25V, VGS=0V, f=1.0MHz
Switching Characteristics
tD(ON)
Turn-On Delay Time
tD(OFF)
Turn-Off Delay Time
VDD=30V, ID=0.2A, VGEN=10V
RL=150, RGEN=25
ns
Note1 : Short duration test pulse used to minimize self-heating effect.
© 2010 Fairchild Semiconductor Corporation
2N7002W Rev. A1
www.fairchildsemi.com
2
2N7002W — N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3.0
RDS(on), (Ω)
DRANI-SOURCE ON-RESISTANCE
ID. DRAIN-SOURCE CURRENT(A)
1.6
VGS = 10V
1.4
1.2
5V
1.0
4V
0.8
0.6
0.4
3V
0.2
2V
0.0
0
1
2
3
4
5
6
7
8
9
VGS = 3V
2.0
10V
1.5
8V
7V
0.2
0.4
RDS(on), (Ω)
DRANI-SOURCE ON-RESISTANCE
RDS(on) (Ω)
DRANI-SOURCE ON-RESISTANCE
0.8
1.0
3.0
VGS = 10V
ID = 500 mA
2.5
2.0
1.5
1.0
0.5
-50
0
50
100
2.5
ID = 500 mA
2.0
ID = 50 mA
1.5
1.0
150
2
4
TJ. JUNCTION TEMPERATURE( C)
1.0
o
TJ = -25 C
o
150 C
0.8
o
25 C
o
125 C
0.6
o
75 C
0.4
0.2
3
4
8
10
Figure 6. Gate Threshold Variation with
Temperature
Vth, Gate-Source Threshold Voltage (V)
Figure 5. Transfer Characteristics
VDS = 10V
6
VGS. GATE-SOURCE VOLTAGE (V)
o
ID. DRAIN-SOURCE CURRENT(A)
0.6
Figure 4. On-Resistance Variation with
Gate-Source Voltage
3.0
5
2.5
VGS = VDS
2.0
ID = 1 mA
ID = 0.25 mA
1.5
1.0
-50
6
0
50
100
150
o
TJ. JUNCTION TEMPERATURE( C)
VGS. GATE-SOURCE VOLTAGE (V)
© 2010 Fairchild Semiconductor Corporation
2N7002W Rev. A1
9V
ID. DRAIN-SOURCE CURRENT(A)
Figure 3. On-Resistance Variation with
Temperature
2
5V
6V
VDS. DRAIN-SOURCE VOLTAGE (V)
0.0
4.5V
2.5
1.0
0.0
10
4V
2N7002W — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
www.fairchildsemi.com
3
Figure 8. Power Derating
280
VGS = 0 V
o
150 C
PC[mW], POWER DISSIPATION
IS Reverse Drain Current, [mA]
Figure 7. Reverse Drain Current Variation with
Diode Forward Voltage and Temperature
100
o
25 C
10
o
-55 C
1
0.0
0.2
0.4
0.6
0.8
200
160
120
80
40
0
1.0
0
VSD, Body Diode Forward Voltage [V]
25
50
o
75
100
125
150
Ta[ C], AMBIENT TEMPERATURE
© 2010 Fairchild Semiconductor Corporation
2N7002W Rev. A1
240
175
2N7002W — N-Channel Enhancement Mode Field Effect Transistor
Typical Performance Characteristics
www.fairchildsemi.com
4
SOT323
© 2010 Fairchild Semiconductor Corporation
2N7002W Rev. A1
2N7002W — N-Channel Enhancement Mode Field Effect Transistor
Package Dimensions
www.fairchildsemi.com
5
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Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
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Datasheet contains the design specifications for product development. Specifications may change in
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I47
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