KEXIN 2SK3269

MOSFET
SMD Type
N-Channel Enhacement Mode MOSFET
2SK3269
TO-263
+0.1
1.27-0.1
Features
4.5 V drive available
Unit: mm
+0.1
1.27-0.1
+0.2
4.57-0.2
5.60
0.1max
+0.1
1.27-0.1
+0.2
5.28-0.2
Low gate charge
QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)
+0.1
0.81-0.1
2.54
Built-in gate protection diode
+0.2
2.54-0.2
Surface mount device available
+0.2
15.25-0.2
MAX. (VGS = 10 V, ID = 18 A)
5.08
+0.2
2.54-0.2
RDS(on)1 = 12 m
+0.2
8.7-0.2
Low on-state resistance
1 Gate
+0.2
0.4-0.2
+0.1
-0.1
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Drain to source voltage
VDSS
100
V
Gate to source voltage
VGSS
20
V
ID
35
A
140
A
Drain current
Idp *
Power dissipation
Ta=25
PD
1.5
W
40
Tc=25
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* PW
Unit
10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Symbol
Drain source surrender voltage
VDSS
ID=1mA,VGS=0
Drain cut-off current
IDSS
VDS=20V,VGS=0
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Testconditons
Min
Max
100
Unit
V
10
IGSS
VGS= 20V,VDS=0
VGS(off)
VDS=10V,ID=1mA
1.0
Yfs
VDS=10V,ID=12A
9.0
RDS(on)
Typ
A
10
2.5
A
V
S
VGS=10V,ID=18A
8.5
12
m
VGS=4.5V,ID=18A
12
19
m
Ciss
VDS=10V,VGS=0,f=1MHZ
1300
pF
Output capacitance
Coss
570
pF
Reverse transfer capacitance
Crss
300
pF
Turn-on delay time
ton
70
ns
Rise time
tr
Turn-off delay time
toff
Fall time
tf
ID=18A,VGS(on)=10V,RG=10
,VDD=10V
1220
ns
100
ns
180
ns
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