HTT1115S Silicon NPN Epitaxial Twin Transistor ADE–208–1440C(Z) Rev.3 Aug. 2001 Features • Include 2 transistors in a small size SMD package: SMFPAK–6(6 Leads: 1.5 x 1.1 x 0.55 mm) Q1: Equivalent Buffer transistor Q2: Equivalent OSC transistor 2SC5700 2SC5757 Outline SMFPAK-6 Pin Arrangement 6 5 B1 6 4 2 3 Index band C1 1 1. Collector Q1 2. Emitter Q1 3. Collector Q2 Marking is “EK1”. B2 4 Q2 Q1 1 Note: E2 5 E1 2 C2 3 4. Base Q2 5. Emitter Q2 6. Base Q1 HTT1115S Absolute Maximum Ratings (Ta = 25 °C) Ratings Item Symbol Q1 Q2 Unit Collector to base voltage VCBO 15 10 V Collector to emitter voltage VCEO 4 3.5 V Emitter to base voltage VEBO 1.5 1.5 V Collector current IC 50 80 mA Collector power dissipation PC Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Total 220* mW *Value on PCB. (FR–4(13 x 13 x 0.635 mm)) Electrical Characteristics (Q1) (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Collector to base breakdown voltage V(BR)CBO 15 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 0.1 µA VCB = 15 V, IE = 0 Collector cutoff current ICEO 1 µA VCE = 4 V, RBE = infinite Emitter cutoff current IEBO 0.2 µA VEB = 0.8 V, IC = 0 DC current transfer ratio hFE 100 130 170 VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre 0.45 pF VCB = 1 V, f = 1 MHz, Emitter ground Gain bandwidth product fT 10 13 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Forward transfer coefficient |S21| 13 16 dB VCE = 1 V, IC = 5 mA, f = 900 MHz Noise figure NF 1.0 2.0 dB VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 Ω Rev.3, Aug. 2001, page 2 of 10 2 HTT1115S Electrical Characteristics (Q2) (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Collector to base breakdown voltage V(BR)CBO 10 V IC = 10 µA, IE = 0 Collector cutoff current ICBO 1 µA VCB = 10 V, IE = 0 Collector cutoff current ICEO 1 µA VCE = 3.5 V, RBE = infinite Emitter cutoff current IEBO 1.0 µA VEB = 1.5 V, IC = 0 DC current transfer ratio hFE 80 100 130 VCE = 1 V, IC = 5 mA Reverse transfer capacitance Cre 0.8 1.1 pF VCB = 1 V, f = 1 MHz, Emitter ground Gain bandwidth product fT 4 6 GHz VCE = 1 V, IC = 5 mA, f = 1 GHz Forward transfer coefficient PG 7 12 dB VCE = 1 V, IC = 5 mA, f = 900 MHz Noise figure NF 1.5 2.3 dB VCE = 1 V, IC = 5 mA, f = 900 MHz, ΓS = ΓL = 50 Ω Rev.3, Aug. 2001, page 3 of 10 HTT1115S Main Characteristics (Q1) Typical Output Characteristics 450 µA 400 µA 0µ 40 I C (mA) 350 µA 50 300 µA 250 µA 30 200 µA Collector Current I C (mA) Collector Current Typical Forward Transfer Characteristics 50 VCE = 1 V A 50 150 µA 20 100 µA IB = 50 µA 10 0 1 2 3 4 40 30 20 10 0 Collector to Emitter Voltage VCE (V) 200 DC Current Transfer Ratio hFE VCE = 1 V 100 0 1 2 5 10 Collector Current Rev.3, Aug. 2001, page 4 of 10 20 50 IC (mA) 100 0.4 0.6 1.0 0.8 Base to Emitter Voltage VBE (V) Reverse Transfer Capacitance Cre (pF) DC Current Transfer Ratio vs. Collector Current 0.2 Reverse Transfer Capacitance vs. Collector to Base Voltage 0.5 IE = 0 f = 1MHz 0.4 0.3 0.2 0.1 0 0.4 0.8 1.2 1.6 Collector to Base Voltage VCB (V) 2.0 HTT1115S Gain Bandwidth Product vs. Collector Current 20 |S21|2 (dB) VCE = 2V 16 12 8 VCE = 1 V 4 0 1 S21 Parameter vs. Collector Current VCE = 2 V f = 1 GHz S21 Parameter Gain Bandwidth Product fT (GHz) 20 16 12 VCE = 1V 8 4 f = 900 MHz 0 2 5 10 Collector Current 20 50 100 1 2 5 10 Collector Current IC (mA) 20 50 100 IC (mA) Noise Figure vs. Collector Current 5 Noise Figure NF (dB) f = 900MHz 4 VCE = 1 V 3 2 VCE = 2 V 1 0 1 2 5 10 20 50 100 Collector Current IC (mA) Rev.3, Aug. 2001, page 5 of 10 HTT1115S Typical Output Characteristics 500 µA µA 50 450 µA µA 400 350 µA 300 40 µA 250 30 A 200 µ Typical Forward Transfer Characteristics 50 150 µ A 20 100 µA IB = 50 µA 10 0 0.5 1.0 1.5 2.0 2.5 3.0 Collector Current Ic (mA) Collector Current IC (mA) Main Characteristics (Q2) 3.5 VCE = 1 V 40 30 20 10 0 0.2 Collector to Emitter Voltage VCE (V) Reverse Transfer Capacitance Cre (pF) DC Current Transfer Ratio hFE VCE = 1 V 100 0 1 2 5 10 20 50 Collector Current IC (mA) Rev.3, Aug. 2001, page 6 of 10 100 0.6 0.8 1.0 Base to Emitter Voltage VBE (V) Reverse Transfer Capacitance vs. Collector to Base Voltage DC Current Transfer Ratio vs. Collector Current 200 0.4 1.6 IE = 0 f = 1MHz 1.4 1.2 1.0 0.8 0.6 0 0.4 0.8 1.2 1.6 Collector to Base Voltage VCB (V) 2.0 HTT1115S Gain Bandwidth Product vs. Collector Current S21 Parameter vs. Collector Current 20 f = 900 MHz 16 |S21|2 (dB) f = 1 GHz V CE = 2 V 12 V CE = 1 V S21 Parameter Gain Bandwidth Product fT (GHz) 20 8 4 0 16 VCE = 2 V V CE = 1 V 12 8 4 0 1 2 5 10 20 50 100 1 2 5 10 Collector Current Collector Current IC (mA) 20 50 100 IC (mA) Noise Figure vs. Collector Current 5 Noise Figure NF (dB) f = 900 MHz 4 3 VCE = 1 V 2 VCE = 2 V 1 0 1 2 5 10 Collector Current 20 50 100 IC (mA) Rev.3, Aug. 2001, page 7 of 10 HTT1115S Collector Power Dissipation Pc* (mW) Collector Power Dissipation Curve 250 *: Value on PCB. (FR–4 (13 x13 x0.635 mm)) 200 2 devices total 150 100 50 0 50 100 150 Ambient temperature Ta (°C) Rev.3, Aug. 2001, page 8 of 10 200 HTT1115S Package Dimensions As of July, 2001 Unit: mm +0.1 0.15–0.05 0.55MAX (0.1) (0.2) 1.1 ± 0.1 1.5 ± 0.05 (0.2) +0.1 6-0.2 –0.05 (0.1) 1.5 ± 0.05 (0.5) (0.5) 1.0 ± 0.1 Hitachi Code JEDEC JEITA Mass (reference value) SMFPAK-6 — Conforms 0.0025 g Rev.3, Aug. 2001, page 9 of 10 HTT1115S Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party’s rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. 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(Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://semiconductor.hitachi.com.hk Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan. Colophon 5.0 Rev.3, Aug. 2001, page 10 of 10