UNISONIC TECHNOLOGIES CO., LTD 3N60 Power MOSFET 3 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES 1 TO-220 *Pb-free plating product number: 3N60L * RDS(ON) = 3.6Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Order Number Normal Lead Free Plating 3N60-x-TA3-T 3N60L-x-TA3-T Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 3N60L-x-TA3-T (1)Packing Type (2)Package Type (3)Drain-Source Voltage (4)Lead Plating www.unisonic.com.tw Copyright © 2007 Unisonic Technologies Co., Ltd (1) T: Tube (2) TA3: TO-220 (3) A: 600V, B: 650V (4) L: Lead Free Plating, Blank: Pb/Sn 1 of 8 QW-R502-110,A 3N60 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT 600 V Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current - (Note 1) IAR 3.0 A TC = 25°C 3.0 A Continuous Drain Current ID TC = 100°C 1.9 A Pulsed Drain Current, TP Limited by TJMAX - (Note 1) IDM 12 A Avalanche Energy, Single Pulsed (Note 2) EAS 200 mJ Avalanche Energy, Repetitive, Limited by TJMAX EAR 7.5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.5 V/ns Power Dissipation PD 75 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 3N60-A 3N60-B THERMAL DATA PARAMETER SYMBOL θJC θJA Junction-to-Case Junction-to-Ambient TYP MAX 1.67 62.5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TC =25℃, unless otherwise specified) PARAMETER Off Characteristics Drain-Source Breakdown Voltage SYMBOL 3N60-A 3N60-B Drain-Source Leakage Current Gate-Source Leakage Current BVDSS IDSS Forward Reverse Breakdown Voltage Temperature Coefficient On Characteristics Gate Threshold Voltage Drain-Source On-State Resistance Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge IGSS VGS = 0 V, ID = 250 µA MIN TYP MAX UNIT 600 650 VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125°C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 10 100 100 -100 △BVDSS/△TJ ID = 250 µA, Referenced to 25°C VGS(TH) RDS(ON) CISS COSS CRSS tD(ON) tR tD(OFF) tF QG QGS QDD UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS VDS = VGS, ID = 250 µA VGS = 10 V, ID = 1.5A VDS = 25 V, VGS = 0 V, f = 1MHz VDD = 300V, ID = 3.0 A, RG = 25Ω (Note 4, 5) VDS= 480V,ID= 3.0A, VGS= 10 V (Note 4, 5) 0.6 2.0 V V µA µA nA nA V/℃ 2.8 4.0 3.6 V Ω 350 50 5.5 450 65 7.5 pF pF pF 10 30 20 30 10 2.7 4.9 30 70 50 70 13 ns ns ns ns nC nC nC 2 of 8 QW-R502-110,A 3N60 Power MOSFET ELECTRICAL CHARACTERISTICS(Cont.) PARAMETER SYMBOL TEST CONDITIONS Source- Drain Diode Ratings and Characteristics Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A Maximum Continuous Drain-Source IS Diode Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time tRR VGS = 0 V, IS = 3.0 A, dIF/dt = 100 A/µs (Note 4) Reverse Recovery Charge QRR Notes: 1. Repetitive Rating : Pulse width limited by TJ 2. L = 40mH, IAS = 3.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 3.0A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 210 1.2 1.4 V 3.0 A 12 A ns µC 3 of 8 QW-R502-110,A 3N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver * dv/dt controlled by RG * I SD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. VGS VDD Fig. 1A Peak Diode Recovery dv/dt Test Circuit VGS (Driver) P.W. Period D= P. W. Period VGS= 10V I FM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Fig. 1B Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-110,A 3N60 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG VGS D.U.T. 10V 10% t D(ON ) Pulse Width ≤ 1μs tD (OFF) tF tR Duty Factor ≤0.1% Fig. 2A Switching Test Circuit Same Type as D.U.T. 50kΩ 12V 0.2μF Fig. 2B Switching Waveforms QG 10V 0.3μF VDS QGS QGD VGS DUT VGS 3mA Charge Fig. 3A Gate Charge Test Circuit Fig. 3B Gate Charge Waveform L VDS BVDSS RD 10V VDD D.U.T. tp Fig. 4A Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw IAS tp Time Fig. 4B Unclamped Inductive Switching Waveforms 5 of 8 QW-R502-110,A 3N60 Power MOSFET TYPICAL CHARACTERISTICS 1.2 1.1 1.0 Note: 1. VGS =0V 2. I D=250µA 0.9 0.8 -100 -50 0 50 100 150 200 On-Resistance Variation vs. Junction Temperature Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) Breakdown Voltage Variation vs. Junction Temperature Junction Temperature, T J (℃) 3.0 2.5 2.0 1.5 1.0 Note: 1. VGS=10V 2. ID=4A 0.5 0.0 -100 -50 0 50 100 150 200 Junction Temperature, TJ (℃) Maximum Safe Operating Area Maximum Drain Current vs. Case Temperature 3.0 100µs 1ms 10 10ms 1 DC Notes: 1 . T J=25℃ 2 . T J=150 ℃ 3 . Single Pulse Drain Current, I D (A) Drain Current, ID (A) Operation in This Area is Limited by R DS(on ) 2.0 1.5 1.0 0.5 0.1 1 2.5 0 10 100 1000 Drain-Source Voltage, VDS (V) 25 Transfer Characteristics On-State Characteristics Top : 1 0.1 Notes: 1. 250µs Pulse Test 2. TC=25℃ 0.1 1 10 Drain-to-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Drain Current, I D (A) Drain Current, ID (A) 10 V GS 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V Bottorm :5.5V 10 150 50 75 100 125 Case Temperature, TC (℃) 150℃ 1 25℃ 55℃ Notes: 1. VDS=50V 2. 250µs Pulse Test 0.1 2 4 6 8 10 Gate-Source Voltage, VGS (V) 6 of 8 QW-R502-110,A 3N60 Power MOSFET TYPICAL CHARACTERISTICS(Cont.) On State Current vs. Allowable Case Temperature On-Resistance Variation vs. Drain Current and Gate Voltage Reverse Drain Current, I DR (A) Drain-Source On-Resistance, RDS(ON) (Ω) 6 5 VGS=20V 4 VGS =10V 3 2 1 0 Note: TJ =25℃ 0 2 4 6 8 10 12 Drain Current, ID (A) 10 150℃ 1 Notes: 1. VGS=0V 2. 250µs Test 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 Source-Drain Voltage, VSD (V) Capacitance Characteristics (Non-Repetitive) 600 Gate Charge Characteristics 12 Gate-Source Voltage, VGS (V) CISS =CGS +CGD (CDS=shorted ) COSS =CDS+CGD CRSS=CGD Capacitance (pF) 500 C ISS 400 C OSS 300 Notes: 1. VGS =0V 2. f = 1MHz 200 CRSS 100 25℃ VDS=300V VDS=480V 10 VDS=120V 8 6 4 2 Note: ID=3.0A 0 0 0.1 0 1 10 Drain-SourceVoltage, VDS (V) 2 4 6 8 10 Total Gate Charge, QG (nC) Thermal Response, θJC (t) Transient Thermal Response Curve 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 10-5 10-4 10-3 Notes : 1. θJC (t) = 1.18℃/W Max. 2. Duty Factor , D=t 1/t2 3.TJM-TC=PDM ×θJC (t) 10-2 10-1 100 101 Square Wave Pulse Duration, t 1 (sec) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-110,A 3N60 Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-110,A