CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUDM7001 is an Enhancement-mode N-Channel Field Effect Transistor, manufactured by the N-Channel DMOS Process, designed for high speed pulsed amplifier and driver applications. This MOSFET offers Low rDS(on) and Low Theshold Voltage. MARKING CODE: C7A FEATURES: SOT-523 CASE • Load/Power Switches • Power Supply Converter Circuits • Battery Powered Portable Equipment • • • • • • MAXIMUM RATINGS: (TA=25°C) SYMBOL APPLICATIONS: Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Steady State) Continuous Drain Current Power Dissipation Operating and Storage Junction Temperature Power Dissipation 250mW Low rDS(on) Low Threshold Voltage Logic Level Compatible Small, SOT-523 Surface Mount Package Complementary Device: CMUDM8001 UNITS VDS VGS 20 10 V ID ID 100 mA 200 mA PD TJ, Tstg 250 mW -65 to +150 °C ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN TYP IGSSF, IGSSR IDSS BVDSS VGS(th) rDS(ON) rDS(ON) rDS(ON) gFS Crss Ciss Coss ton toff VGS=10V, VDS=0 VDS=20V, VGS=0 VGS=0, ID=100μA VDS=VGS, ID=250μA V MAX UNITS 1.0 μA 1.0 μA 20 V 0.9 V VGS=4.0V, ID=10mA VGS=2.5V, ID=10mA 3.0 Ω 4.0 Ω VGS=1.5V, ID=1.0mA VDS=10V, ID=100mA 15 VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDS=3.0V, VGS=0, f=1.0MHz VDD=3.0V, VGS=2.5V, ID=10mA VDD=3.0V, VGS=2.5V, ID=10mA 0.6 100 Ω mS 4.0 pF 9.0 pF 9.5 pF 50 ns 75 ns R1 (9-February 2010) CMUDM7001 SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-523 CASE - MECHANICAL OUTLINE (Bottom View) LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: C7A R1 (9-February 2010) w w w. c e n t r a l s e m i . c o m