< IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Collector current I C .............….......................… 450A Collector-emitter voltage V CES ......................… 1 2 0 0 V Maximum junction temperature T j m a x .............. 1 7 5 °C ●Flat base Type ●Copper base plate (non-plating) ●Tin plating pin terminals ●RoHS Directive compliant Dual (Half-Bridge) ●UL Recognized under UL1557, File E323585 APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION TERMINAL Dimension in mm SECTION A INTERNAL CONNECTION Tolerance otherwise specified Division of Dimension Es2 (39) Tolerance 0.5 to 3 ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 E2 (47) C1 (48) Tr2 C2E1 (24) Di2 Di1 Th Tr1 NTC The tolerance of size between terminals is assumed to be ±0.4. G2 (38) t=0.8 TH1 TH2 (1) (2) Publication Date : August.2011 1 G1 (15) Es1 Cs1 (16) (22) C2E1 (23) < IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/FWDi Symbol Item VCES Collector-emitter voltage VGES Gate-emitter voltage IC Ptot IE IERM (Note.1) Unit 1200 V C-E short-circuited ± 20 V (Note.2, 4) Emitter current 450 (Note.3) Pulse, Repetitive Total power dissipation (Note.1) Conditions DC, TC=119 °C Collector current ICRM Rating G-E short-circuited TC=25 °C (Note.2, 4) 3405 TC=25 °C (Note.2, 4) 450 Pulse, Repetitive A 900 (Note.3) W A 900 MODULE Symbol Item Conditions Rating Unit Tjmax Maximum junction temperature - 175 TCmax Maximum case temperature (Note.2) 125 Tjop Operating junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min °C 2500 °C V ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/FWDi Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1.0 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=45 mA, VCE=10 V 5.4 6.0 6.6 V T j =25 °C - 1.80 2.25 T j =125 °C - 2.00 - T j =150 °C - 2.05 - T j =25 °C - 1.70 2.15 VGE=15 V, T j =125 °C - 1.90 - (Chip) T j =150 °C - 1.95 - - - 45 IC=450 A (Note.5) , VGE=15 V, VCEsat Collector-emitter saturation voltage Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time (Terminal) IC=450 A (Note.1) Emitter-collector voltage , VCE=10 V, G-E short-circuited VCC=600 V, IC=450 A, VGE=15 V VCC=600 V, IC=450 A, VGE=±15 V, RG=0 Ω, Inductive load - - 9.0 - - 0.75 - 1050 - - - 800 - - 200 - - 600 - - 300 T j =25 °C - 1.80 2.25 G-E short-circuited, T j =125 °C - 1.80 - (Terminal) T j =150 °C - 1.80 - IE=450 A VEC (Note.5) IE=450 A (Note.5) (Note.5) , T j =25 °C - 1.70 2.15 G-E short-circuited, , T j =125 °C - 1.70 - (Chip) T j =150 °C - 1.70 - V V nF nC ns V V trr (Note.1) Reverse recovery time VCC=600 V, IE=450 A, VGE=±15 V, - - 300 ns Qrr (Note.1) Reverse recovery charge RG=0 Ω, Inductive load - 24 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=450 A, - 54.9 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, T j =150 °C, - 48.0 - Reverse recovery energy per pulse Inductive load - 32.4 - mJ - - 0.7 mΩ - 4.3 - Ω Err (Note.1) R CC'+EE' Internal lead resistance rg Internal gate resistance Main terminals-chip, per switch, TC=25 °C (Note.2) Per switch Publication Date : August.2011 2 mJ < IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified) NTC THERMISTOR PART Symbol Item Limits Conditions (Note.2) R25 Zero-power resistance TC=25 °C ΔR/R Deviation of resistance TC=100 °C, R100=493 Ω B(25/50) B-constant Approximate by equation P25 Power dissipation TC=25 °C (Note.6) (Note.2) Max. Unit Min. Typ. 4.85 5.00 5.15 kΩ -7.3 - +7.8 % - 3375 - K - - 10 mW THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Item Thermal resistance Rth(j-c)D Rth(c-s) (Note.2) Contact thermal resistance Limits Conditions (Note.2) Min. Typ. Max. Unit Junction to case, per Inverter IGBT - - 44 K/kW Junction to case, per Inverter FWDi - - 78 K/kW - 15 - K/kW Case to heat sink, per 1 module, Thermal grease applied (Note.7) MECHANICAL CHARACTERISTICS Symbol Mt Ms Item Mounting torque ds Creepage distance da Clearance m Weight ec Limits Conditions Main terminals M 6 screw Mounting to heat sink M 5 screw Typ. Max. 3.5 4.0 4.5 N·m N·m 2.5 3.0 3.5 Terminal to terminal 11.55 - - Terminal to base plate 12.32 - - mm Terminal to terminal 10.00 - - Terminal to base plate 10.85 - - - 350 - g ±0 - +100 μm - Flatness of base plate Unit Min. On the centerline X, Y (Note.8) mm Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). 2. Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. The heat sink thermal resistance should measure just under the chips. 3. Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. 4. Junction temperature (T j ) should not increase beyond T j m a x rating. 5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit. R 1 1 6. B ( 25 / 50) ln( 25 ) /( ) R 50 T25 T50 -:Concave +:Convex R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K] 7. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). 8. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X mounting side mounting side mounting side -:Concave +:Convex 9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "M2.6×10 or M2.6×12 self tapping screw" The length of the screw depends on the thickness of the PCB. Publication Date : August.2011 3 < IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS (T a =25 °C) Symbol Item Conditions VCC (DC) Supply voltage Applied across C1-E2 VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 RG External gate resistance Per switch CHIP LOCATION (Top view) Limits Min. Typ. Max. Unit - 600 850 13.5 15.0 16.5 V V 0 - 10 Ω Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor Publication Date : August.2011 4 < IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS 22 22 48 VGE=15 V IC 15 V 16 VGE=15 V Tr1 23/24 Shortcircuited Di2 VEC test circuit ～ v GE 90 % Q rr =0.5×I rr ×t r r iE C1 0V 0 t Load t rr IE + C2E1 V CC iC t 0A ～ ～ Es1 47 39 47 Di1 iE G1 IE 38 39 Tr2 V 16 23/24 V C E s a t test circuit -VGE 15 38 47 39 47 39 IE Shortcircuited IC 38 48 Shortcircuited 16 V 23/24 38 48 15 23/24 Shortcircuited 22 22 Shortcircuited 15 16 V 48 Shortcircuited 90 % +VGE RG VGE 0V -VGE Irr VCE G2 iC E2 Es2 10% 0A tr t d( o n) tf td ( off ) t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE vCE iC iC ICM VCC 0.5×I r r ICM VCC IEM vEC vCE t 0A 0 0.1×ICM 0.1×VCC t 0 0.1×VCC 0.02×ICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t VCC 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) Publication Date : August.2011 5 < IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 °C VGE=15 V (Chip) 900 VGE=20 V 800 13.5 V 12 V 15 V COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) IC (A) COLLECTOR CURRENT 600 11 V 500 400 10 V 300 200 T j =150 °C 3 700 9V 100 0 T j =125 °C 2.5 2 T j =25 °C 1.5 1 0.5 0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 10 0 100 VCE (V) T j =25 °C 200 300 400 500 600 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 700 800 900 IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) (Chip) 1000 10 IC=900 A 8 T j =150 °C IE (A) IC=450 A 6 EMITTER CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) (Chip) 3.5 IC=180 A 4 2 0 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 18 T j =125 °C 100 T j =25 °C 10 20 0 VGE (V) 0.5 1 1.5 2 EMITTER-COLLECTOR VOLTAGE Publication Date : August.2011 6 2.5 VEC (V) 3 < IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC=450 A, VGE=±15 V, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 1000 td(on) td(off) td(off) tf tr SWITCHING TIME (ns) SWITCHING TIME (ns) td(on) 100 tf 100 tr 10 10 100 COLLECTOR CURRENT 10 1000 0.1 IC (A) 1 10 100 EXTERNAL GATE RESISTANCE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC/IE=450 A, VGE=±15 V, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 1000 SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) Eoff Err 10 Eon 1 Eon 100 Eoff Err 10 1 10 100 1000 0.1 1 10 EXTERNAL GATE RESISTANCE COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) Publication Date : August.2011 7 100 RG (Ω) < IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 °C 100 1000 Cies Irr t r r (ns), I r r (A) CAPACITANCE (nF) 10 Coes 1 trr 100 Cres 0.1 10 0.1 1 10 COLLECTOR-EMITTER VOLTAGE 100 10 VCE (V) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) VCC=600 V, IC=450 A, T j =25 °C Single pulse, TC=25°C R t h ( j - c ) Q =44 K/kW, R t h ( j - c ) D =78 K/kW Zth(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE VGE (V) GATE-EMITTER VOLTAGE 1000 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 15 10 5 0 0 100 500 GATE CHARGE 1000 1500 QG (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 TIME (S) Publication Date : August.2011 8 0.1 1 10 < IGBT MODULES > CM450DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials •These materials are intended as a reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. •Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. •All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Mitsubishi Electric Corporation by various means, including the Mitsubishi Semiconductor home page (www.MitsubishiElectric.com/semiconductors/). •When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Mitsubishi Electric Corporation assumes no responsibility for any damage, liability or other loss resulting from the information containedherein. •Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. •The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. •If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. •Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. © 2011 MITSUBISHI ELECTRIC CORPORATION. ALL RIGHTS RESERVED. Publication Date : August.2011 9