< HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1000E4C-66R IC ······························································· 1000A VCES ························································· 3300V 1-element in a Pack (for brake chopper) Insulated Type LPT-IGBT / Soft Recovery Diode AlSiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM December 2012 HVM-1055-F Dimensions in mm 1 < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS Symbol Item VCES Collector-emitter voltage VGES IC ICRM IE IERM Ptot Viso Ve Tj Tjop Tstg tpsc Gate-emitter voltage Collector current Emitter current (Note 2) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating junction temperature Storage temperature Short circuit pulse width Conditions VGE = 0V, Tj = -40…+150°C VGE = 0V, Tj = −50°C VCE = 0V, Tj = 25°C DC, Tc = 95°C (Note 1) Pulse DC (Note 1) Pulse Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Ratings 3300 3200 ± 20 1000 2000 1000 2000 10400 6000 2600 −50 ~ +150 −50 ~ +150 −55 ~ +150 10 VCC = 2500V, VCE ≤ VCES, VGE =15V, Tj =150°C Unit V V A A A A W V V °C °C °C s ELECTRICAL CHARACTERISTICS Symbol Item Conditions Tj = 25°C Tj = 125°C Tj = 150°C ICES Collector cutoff current VCE = VCES, VGE = 0V VGE(th) IGES Cies Coes Cres QG Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge VCE = 10 V, IC = 100 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCEsat Collector-emitter saturation voltage td(on) Turn-on delay time tr Turn-on rise time Eon(10%) Turn-on switching energy (Note 5) Eon Turn-on switching energy (Note 6) td(off) Turn-off delay time tf Turn-off fall time Eoff(10%) Turn-off switching energy (Note 5) Eoff Turn-off switching energy (Note 6) December 2012 (HVM-1055-F) VCE = 10 V, VGE = 0 V, f = 100 kHz Tj = 25°C VCC = 1800V, IC = 1000A, VGE = ±15V IC = 1000 A VGE = 15 V Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C (Note 4) VCC = 1800 V IC = 1000 A VGE = ±15 V RG(on) = 2.4 Ω Ls = 150 nH Inductive load VCC = 1800 V IC = 1000 A VGE = ±15 V RG(off) = 8.4 Ω Ls = 150 nH Inductive load 2 Min — — — 5.7 −0.5 — — — — — — — — — — — — — — — — — — — — — — — — — — — — — Limits Typ — 4.0 24.0 6.2 — 140.0 8.7 4.0 10.7 2.45 3.10 3.25 1.00 0.95 0.95 0.28 0.30 0.30 1.40 1.85 2.00 1.50 1.95 2.15 2.70 2.80 2.85 0.30 0.35 0.40 1.35 1.65 1.70 1.50 1.80 1.90 Max 4.0 — — 6.7 0.5 — — — — — 3.70 — — 1.25 1.25 — 0.50 0.50 — — — — — — — 3.30 3.30 — 1.00 1.00 — — — — — — Unit mA V µA nF nF nF µC V µs µs J J µs µs J J < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules ELECTRICAL CHARACTERISTICS (continuation) Symbol Item VEC Emitter-collector voltage trr Reverse recovery time Conditions (Note 2) Reverse recovery current (Note 2) Qrr Reverse recovery charge (Note 2) Reverse recovery energy (Note 2) VCC = 1800 V IC = 1000 A VGE = ±15 V RG(on) = 2.4 Ω Ls = 150 nH Inductive load (Note 5) Reverse recovery energy Erec Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C Tj = 25°C Tj = 125°C Tj = 150°C (Note 4) (Note 2) Irr Erec(10%) IE = 1000 A VGE = 0 V (Note 2) (Note 6) — — Limits Typ 2.15 2.30 2.25 0.50 0.70 0.80 850 1000 1050 700 1150 1350 0.70 1.20 1.35 0.80 1.35 1.55 Min — — — — Limits Typ — — — 7.0 Max 12.0 22.5 22.5 — Min 7.0 3.0 1.0 — 600 19.5 32.0 — — — — — Limits Typ — — — 1.2 — — — 16.5 33.0 0.18 0.36 2.25 Max 22.0 6.0 3.0 — — — — — — — — — Min — — — — — — — — — — — — — — Max — 2.80 — — Unit V µs — — — — — A µC — — J — — J — THERMAL CHARACTERISTICS Symbol Item Rth(j-c)Q Rth(j-c)D Thermal resistance Rth(c-s) Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Junction to Case, Clamp-Di part Case to heat sink, grease = 1W/m·k, D(c-s) = 100m Unit K/kW K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Item Mt Ms Mt m CTI da ds Mass Comparative tracking index Clearance Creepage distance LP CE Parasitic stray inductance RCC’+EE’ RAA’+KK’ rg Internal lead resistance Internal lead resistance Internal gate resistance Mounting torque Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Collector to Emitter Anode to Cathode TC = 25°C, Collector to Emitter TC = 25°C, Anode to Cathode TC = 25°C Note1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating(150°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi) and the brake chopper, anode to cathode clamp diode (Clamp-Di). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. 6. Definition of all items is according to IEC 60747, unless otherwise specified. December 2012 (HVM-1055-F) 3 Unit N·m N·m N·m kg — mm mm nH nH mΩ mΩ Ω < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 2000 2000 Tj = 1 50°C VGE = 1 9V 1600 VGE = 11 V VGE = 1 5V 1200 VG E = 13 V 800 VGE = 9V Coll ector Current [A] 1600 Coll ector Current [A] VCE = VGE 1200 800 Tj = 25° C Tj = 1 50 °C 400 400 0 0 0 1 2 3 4 5 6 0 Collector - Emitter Voltage [V] 2 4 6 8 10 12 Gate - Emi tter Voltage [V] COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 2000 2000 VGE = 15 V 1600 Tj = 1 25°C Tj = 25 °C Tj = 25°C 1200 Tj = 1 25 °C Tj = 1 50°C 800 400 Emi tter Current [A] Coll ector Current [A] 1600 Tj = 1 50 °C 1200 800 400 0 0 0 1 2 3 4 5 0 Collector-Emitter Saturation Voltage [V] December 2012 (HVM-1055-F) 1 2 3 4 Emitter-Collector Voltage [V] 4 5 < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES CAPACITANCE CHARACTERISTICS (TYPICAL) GATE CHARGE CHARACTERISTICS (TYPICAL) 1000 20 VCE = 18 00V, IC = 1 000 A Tj = 2 5° C 15 Gate-Emitter Voltage [V] Capa citance [nF] Ci es 100 10 Co es Cres VGE = 0V, Tj = 2 5° C f = 10 0kHz 10 5 0 -5 -10 1 -15 0.1 1 10 100 0 4 Coll ector-Emitter Voltage [V] 12 16 Gate Charge [µC] HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 7 7 VCC = 18 00 V, VGE = ± 15V RG(on) = 2.4Ω, RG( off) = 8 .4 Ω LS = 1 50n H, Tj = 1 25°C In ductive l oa d VCC = 18 00 V, VGE = ± 15V RG(on) = 2.4Ω, RG( off) = 8 .4 Ω LS = 1 50n H, Tj = 1 50° C In ductive l oa d 6 Eon 5 4 Eo ff 3 2 Ere c 1 Switching Energies [J/pulse] 6 Switching Energies [J/pulse] 8 Eon 5 4 Eo ff 3 Erec 2 1 0 0 0 400 800 1200 1600 2000 0 Collector Current [A] December 2012 (HVM-1055-F) 400 800 1200 Collector Current [A] 5 1600 2000 < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 7 7 VCC = 180 0V, I C = 10 00A VGE = ±15 V, LS = 15 0nH Tj = 12 5°C , Indu cti ve lo ad 6 Switching Energies [J/pulse] Switching Energies [J/pulse] 6 VCC = 180 0V, I C = 10 00A VGE = ±15 V, LS = 15 0nH Tj = 15 0°C , Indu cti ve lo ad 5 4 Eon 3 Eoff 2 Erec 1 5 Eon 4 3 Eo ff 2 Ere c 1 0 0 0 5 10 15 20 0 5 Gate resistor [Ohm] 20 HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 100 100 VCC = 18 00 V, VGE = ± 15V R G(on) = 2.4Ω, RG( off) = 8 .4 Ω L S = 1 50n H, Tj = 1 50°C In ductive l oa d VCC = 18 00 V, VGE = ± 15V R G(on) = 2.4Ω, RG( off) = 8 .4 Ω L S = 1 50n H, Tj = 1 25°C In ductive l oa d 10 Switching Times [µs] 10 Switching Times [µs] 15 Gate resistor [Ohm] HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) td(o ff) td (on) 1 tf 0.1 td(o ff) td(o n) 1 tr 0.1 tr 0.01 100 10 tf 1000 10000 0.01 100 Collector Current [A] December 2012 (HVM-1055-F) 1000 Collector Current [A] 6 10000 < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 100 100 10000 trr 0.1 100 100 10 10000 1000 Irr 10 1 trr 0.1 100 100 10 10000 1000 Emitter Current [A] 1000 Emitter Current [A] TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS Normalized Transient Thermal impedance 1.2 R th(j-c )Q = 12 .0 K/kW R th(j-c )D = 22.5K/kW 1 t ( t ) i 1 exp Z th ( j c ) R i i 1 n 0.8 0.6 Ri [K/kW] : 1 0.0096 2 0.1893 3 0.4044 4 0.3967 i [sec] : 0.0001 0.0058 0.0602 0.3512 0.4 0.2 0 0.001 0.01 0.1 1 10 Time [s] December 2012 (HVM-1055-F) 7 Reverse Recovery Current [A] 1 1000 Reverse Recovery Time [µs] Irr 10 10000 VCC = 18 00 V, VGE = ± 15V RG(on) = 2.4Ω, LS = 150 nH Tj = 1 50°C, In ductive l oa d Reverse Recovery Current [A] Reverse Recovery Time [µs] VCC = 18 00 V, VGE = ± 15V RG(on) = 2.4Ω, LS = 150 nH Tj = 1 25°C, In ductive l oa d < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules PERFORMANCE CURVES REVERSE BIAS SAFE OPERATING AREA (RBSOA) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 4000 16 VCC 25 00V, VGE = ±1 5V R G(on) = 2.4Ω, RG( off) = 8 .4 Ω Tj = 1 50°C VCC 25 00 V, VGE = ± 15V Tj = 150 °C, RG(o ff) = 8.4Ω 12 Coll ector Current [kA] Coll ector Current [A] 3000 2000 1000 0 8 4 0 0 1000 2000 3000 4000 0 Collecto r-Emitter Voltage [V] 4000 Reverse Recovery Current [A] VCC 25 00 V, di /d t < 6 kA/µs Tj = 150 °C 3000 2000 1000 0 1000 2000 3000 4000 Emitter-Collector Voltage [V] December 2012 (HVM-1055-F) 2000 3000 Collector-Emitter Voltage [V] FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 0 1000 8 4000 < HVIGBT MODULES > CM1000E4C-66R HIGH POWER SWITCHING USE INSULATED TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Keep safety first in your circuit designs! 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