MITSUBISHI IGBT MODULES CM300DX-24S HIGH POWER SWITCHING USE INSULATED TYPE - 6th Generation NX series - CM300DX-24S Collector current IC .............…............… 300A Collector-emitter voltage VCES ...........… 1 2 0 0 V Maximum junction temperature T jmax ... 1 7 5 °C ●Flat base Type ●Copper base plate (non-plating) ●Tin plating pin terminals ●RoHS Directive compliant Dual (Half-Bridge) ●UL Recognized under UL1557, File E323585 APPLICATION AC Motor Control, Motion/Servo Control, Power supply, etc. OUTLINE DRAWING & INTERNAL CONNECTION TERMINAL Dimension in mm SECTION A INTERNAL CONNECTION Es2 (39) G2 (38) Tolerance otherwise specified t=0.8 3 Tolerance 0.5 to ±0.2 over 3 to 6 ±0.3 over 6 to 30 ±0.5 over 30 to 120 ±0.8 over 120 to 400 ±1.2 The tolerance of size between terminals is assumed to be ±0.4. 1 E2 (47) C1 (48) Tr2 C2E1 (24) Di2 Di1 C2E1 (23) Th Tr1 NTC Division of Dimension TH1 TH2 (1) (2) G1 (15) Es1 Cs1 (16) (22) Feb. 2011 MITSUBISHI IGBT MODULES CM300DX-24S HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified) INVERTER PART IGBT/FWDi Rating Unit VCES Symbol Collector-emitter voltage G-E short-circuited 1200 V VGES Gate-emitter voltage C-E short-circuited ±20 V IC Item Ptot Pulse, Repetitive Total power dissipation IE (Note.1) IERM (Note.1) (Note.2) DC, TC=119 °C Collector current ICRM Conditions Emitter current 300 (Note.3) TC=25 °C (Note.2, 4) 2270 TC=25 °C (Note.2, 4) 300 Pulse, Repetitive A 600 (Note.3) W A 600 MODULE Symbol Item Conditions Rating Unit Tjmax Maximum junction temperature - 175 T C max Maximum case temperature (Note.2) 125 Tjop Operating junction temperature - -40 ~ +150 Tstg Storage temperature - -40 ~ +125 Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min °C °C 2500 V ELECTRICAL CHARACTERISTICS (T j =25 °C, unless otherwise specified) INVERTER PART IGBT/FWDi Symbol Item Limits Conditions Min. Typ. Max. Unit ICES Collector-emitter cut-off current VCE=VCES, G-E short-circuited - - 1 mA IGES Gate-emitter leakage current VGE=VGES, C-E short-circuited - - 0.5 μA VGE(th) Gate-emitter threshold voltage IC=30 mA, VCE=10 V 5.4 6.0 6.6 V T j =25 °C - 1.80 2.25 T j =125 °C - 2.00 - T j =150 °C - 2.05 - VCEsat (Terminal) VCEsat (Chip) Cies Collector-emitter saturation voltage Collector-emitter saturation voltage Output capacitance Cres Reverse transfer capacitance QG Gate charge td(on) Turn-on delay time tr Rise time td(off) Turn-off delay time tf Fall time (Note.1) (Terminal) VEC , VGE=15 V IC=300 A (Note.5) , VGE=15 V Emitter-collector voltage (Note.1) (Chip) Emitter-collector voltage V T j =25 °C - 1.70 2.15 T j =125 °C - 1.90 - T j =150 °C - 1.95 - Input capacitance Coes VEC IC=300 A (Note.5) V - - 30 VCE=10 V, G-E short-circuited - - 6.0 - - 0.5 VCC=600 V, IC=300 A, VGE=15 V - 700 - - - 800 VCC=600 V, IC=300 A, VGE=±15 V, RG=0 Ω, Inductive load IE=300 A (Note.5) , G-E short-circuited IE=300 A (Note.5) , G-E short-circuited nF nC - - 200 - - 600 - - 300 T j =25 °C - 1.80 2.25 T j =125 °C - 1.80 - T j =150 °C - 1.80 - ns V T j =25 °C - 1.70 2.15 T j =125 °C - 1.70 - T j =150 °C - 1.70 - V trr (Note.1) Reverse recovery time VCC=600 V, IE=300 A, VGE=±15 V, - - 300 ns Qrr (Note.1) Reverse recovery charge RG=0 Ω, Inductive load - 16 - μC Eon Turn-on switching energy per pulse VCC=600 V, IC=IE=300 A, - 41.0 - Eoff Turn-off switching energy per pulse VGE=±15 V, RG=0 Ω, T j =150 °C, - 32.0 - Reverse recovery energy per pulse Inductive load - 22.0 - R CC'+EE' Internal lead resistance Main terminals-chip, per switch, (Note.2) TC=25 °C - - 0.9 mΩ rg Internal gate resistance Per switch - 6.5 - Ω Err (Note.1) 2 mJ Feb. 2011 MITSUBISHI IGBT MODULES CM300DX-24S HIGH POWER SWITCHING USE INSULATED TYPE ELECTRICAL CHARACTERISTICS (cont.; T j =25 °C, unless otherwise specified) NTC THERMISTOR PART Symbol Item Limits Conditions (Note.2) R25 Zero-power resistance TC=25 °C ΔR/R Deviation of resistance TC=100 °C, R100=493 Ω B(25/50) B-constant Approximate by equation P25 Power dissipation TC=25 °C (Note.6) (Note.2) Max. Unit Min. Typ. 4.85 5.00 5.15 kΩ -7.3 - +7.8 % - 3375 - K - - 10 mW THERMAL RESISTANCE CHARACTERISTICS Symbol Rth(j-c)Q Item Thermal resistance Rth(j-c)D Rth(c-s) Conditions (Note.2) Contact thermal resistance (Note.2) Limits Min. Typ. Max. Unit Junction to case, per Inverter IGBT - - 0.066 K/W Junction to case, per Inverter FWDi - - 0.12 K/W Case to heat sink, per 1 module, (Note.7) Thermal grease applied - 15 - K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Item Conditions Mounting torque Limits Min. Typ. Max. Main terminals M 6 screw 3.5 4.0 4.5 Mounting to heat sink M 5 screw 2.5 3.0 3.5 Terminal to terminal 11.55 - - Terminal to base plate 12.32 - - ds Creepage distance da Clearance m Weight - ec Flatness of base plate On the centerline X, Y Unit N·m mm Terminal to terminal 10.00 - - Terminal to base plate 10.85 - - - 350 - g ±0 - +100 μm (Note.8) mm Note.1: Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi). Note.2: Case temperature (TC) and heat sink temperature (T s ) are defined on the each surface (mounting side) of base plate and heat sink just under the chips. Refer to the figure of chip location. The heat sink thermal resistance should measure just under the chips. Note.3: Pulse width and repetition rate should be such that the device junction temperature (T j ) dose not exceed T j m a x rating. Note.4: Junction temperature (T j ) should not increase beyond T j m a x rating. Note.5: Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit for VCEsat, VEC. R 1 1 Note.6: B ( 25 / 50) ln( 25 ) /( ) R 50 T25 T50 -:Concave +:Convex R25: resistance at absolute temperature T25 [K]; T25=25 [°C]+273.15=298.15 [K] R50: resistance at absolute temperature T50 [K]; T50=50 [°C]+273.15=323.15 [K] Note.7: Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K). Note.8: The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure. Y X mounting side mounting side mounting side -:Concave +:Convex Note.9: Japan Electronics and Information Technology Industries Association (JEITA) standards, "EIAJ ED-4701/300: Environmental and endurance test methods for semiconductor devices (Stress test I)" Note.10: Use the following screws when mounting the printed circuit board (PCB) on the stand offs. "M2.6×10 or M2.6×12 self tapping screw" The length of the screw depends on the thickness of the PCB. 3 Feb. 2011 MITSUBISHI IGBT MODULES CM300DX-24S HIGH POWER SWITCHING USE INSULATED TYPE RECOMMENDED OPERATING CONDITIONS (T a =25 °C) Symbol Item Conditions VCC (DC) Supply voltage Applied across C1-E2 VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 RG External gate resistance Per switch CHIP LOCATION (top view) Limits Min. Typ. Max. - 600 850 13.5 15.0 16.5 0 - 14 Unit V Ω Dimension in mm, tolerance: ±1 mm Tr1/Tr2: IGBT, Di1/Di2: FWDi, Th: NTC thermistor. Each mark points the center position of each chip. 4 Feb. 2011 MITSUBISHI IGBT MODULES CM300DX-24S HIGH POWER SWITCHING USE INSULATED TYPE TEST CIRCUIT AND WAVEFORMS 22 22 48 VGE=15 V IC 15 V 16 VGE=15 V IE Tr1 V 16 16 23/24 23/24 Shortcircuited IE 38 Tr2 47 39 47 39 Di1 Di2 V C E s a t test circuit VEC test circuit ～ vGE iE 90 % 0V iE 0 Q r r =0.5×I r r ×t r r t Load -VGE 15 38 47 39 47 48 Shortcircuited Shortcircuited IC 38 39 V 23/24 38 48 15 23/24 Shortcircuited 22 22 Shortcircuited 15 16 V 48 Shortcircuited trr IE V CC iC 0A ～ + t 90 % +VGE RG VGE 0V Irr VCE iC -VGE 10% 0A tr t d ( on ) tf td( o ff) t Switching characteristics test circuit and waveforms t r r , Q r r test waveform iE vCE iC iC ICM VCC 0.5×I r r ICM VCC IEM vEC vCE VCC t 0A 0 0.1×ICM 0.1×VCC t 0 0.1×VCC 0.02×ICM ti ti IGBT Turn-on switching energy IGBT Turn-off switching energy t 0V t ti FWDi Reverse recovery energy Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing) 5 Feb. 2011 MITSUBISHI IGBT MODULES CM300DX-24S HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES INVERTER PART COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) T j =25 °C VGE=15 V (Chip) VGE=20 V 12 V 400 11 V 300 10 V 200 9 V 100 T j =150 °C 3.0 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) IC (A) 13.5 V 15 V 500 COLLECTOR CURRENT (Chip) 3.5 600 T j =125 °C 2.5 2.0 T j =25 °C 1.5 1.0 0.5 0 0.0 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE 0 10 VCE (V) 200 300 400 COLLECTOR CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) T j =25 °C 100 500 600 IC (A) FREE WHEELING DIODE FORWARD CHARACTERISTICS (TYPICAL) G-E short-circuited (Chip) (Chip) 1000 10 8 IC=600 A 7 IC=300 A IE (A) IC=120 A EMITTER CURRENT COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) 9 6 5 4 3 T j =150 °C 100 T j =125 °C 2 T j =25 °C 1 0 6 8 10 12 14 GATE-EMITTER VOLTAGE 16 18 10 0.0 20 VGE (V) 0.5 1.0 1.5 2.0 EMITTER-COLLECTOR VOLTAGE 6 2.5 3.0 VEC (V) Feb. 2011 MITSUBISHI IGBT MODULES CM300DX-24S HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC=300 A, VGE=±15 V, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C 1000 1000 td(on) td(off) td(off) tf tr SWITCHING TIME (ns) SWITCHING TIME (ns) td(on) 100 tf 100 tr 10 10 10 100 COLLECTOR CURRENT 1000 0.1 IC (A) 1 10 EXTERNAL GATE RESISTANCE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 RG (Ω) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) VCC=600 V, IC/IE=300 A, VGE=±15 V, INDUCTIVE LOAD, PER PULSE ---------------: T j =150 °C, - - - - -: T j =125 °C 100 100 Eon SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) SWITCHING ENERGY (mJ) REVERSE RECOVERY ENERGY (mJ) Eon Eoff Err 10 1 Eoff Err 10 1 10 100 1000 0.1 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) 1 10 EXTERNAL GATE RESISTANCE 7 100 RG (Ω) Feb. 2011 MITSUBISHI IGBT MODULES CM300DX-24S HIGH POWER SWITCHING USE INSULATED TYPE FREE WHEELING DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) VCC=600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD ---------------: T j =150 °C, - - - - -: T j =125 °C CAPACITANCE CHARACTERISTICS (TYPICAL) G-E short-circuited, T j =25 °C 100 1000 Cies 10 t r r (ns), I r r (A) CAPACITANCE (nF) trr Coes Irr 100 1 Cres 0.1 10 0.1 1 10 100 COLLECTOR-EMITTER VOLTAGE 10 100 VCE (V) EMITTER CURRENT TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (MAXIMUM) GATE CHARGE CHARACTERISTICS (TYPICAL) VCC=600 V, IC=300 A, T j =25 °C Single pulse, TC=25°C Zth(j-c) NORMALIZED TRANSIENT THERMAL IMPEDANCE GATE-EMITTER VOLTAGE VGE (V) 20 15 10 5 0 0 200 400 GATE CHARGE 600 800 1000 IE (A) 1000 QG (nC) 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 R t h ( j - c ) Q =0.066 K/W, R t h ( j - c ) D =0.12 K/W TIME (S) 8 Feb. 2011 MITSUBISHI IGBT MODULES CM300DX-24S HIGH POWER SWITCHING USE INSULATED TYPE Keep safety first in your circuit designs! ·Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein. 9 Feb. 2011