HF30-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L FLG The ASI HF30-28F is Designed for FEATURES: B .112 x 45° A C E • PG = 20 dB min. at 30 W/30 MHz • IMD3 = -30 dBc max. at 30 W (PEP) • Omnigold™ Metalization System Ø.125 NOM. FULL R J .125 B E C D E F MAXIMUM RATINGS G IC 5.0 A VCBO 65 V VCEO 35 V VEBO PDISS 4.0 V 60 W @ TC = 25 C -65 OC to +200 OC TJ O -65 C to +150 C θ JC 2.9 OC/W CHARACTERISTICS SYMBOL MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 B .785 / 19.94 C .720 / 18.29 .730 / 18.54 D .970 / 24.64 .980 / 24.89 MAXIMUM .385 / 9.78 F .004 / 0.10 .006 / 0.15 G .085 / 2.16 .105 / 2.67 H .160 / 4.06 .180 / 4.57 .280 / 7.11 I O T STG DIM E O H I .240 / 6.10 J .255 / 6.48 ORDER CODE: ASI10604 TC = 25 OC NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BV CBO IC = 10 mA 65 V BV CES IC = 200 mA 65 V BV CEO IC = 200 mA 35 V BV EBO IE = 10 mA 4.0 V ICES VCE = 30 V 10 mA ICBO VCE = 30 V 1.0 mA hFE VCE = 5.0 V 200 --- COB VCB = 30 V 65 pF GP ηC VCE = 28 V IC = 500 mA 5 f = 1.0 MHz PIN = 7.0 W f = 175 MHz 7.6 dB 60 % A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.