STK7000 Semiconductor N-Channel Enhancement-Mode MOSFET Description • High speed switching application. Features • High density cell design for low RDS(ON). • Voltage controlled small signal switch • High saturation current capability. Ordering Information Type NO. Marking STK7000 STK7000 Package Code TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. PIN Connections 1. Source 2. Gate 3. Drain 0.38 1.20±0.1 1 2 3 KST-9078-003 1 STK7000 Absolute maximum ratings (Ta=25° C) Characteristic Symbol Ratings Unit Drain-Source voltage VDSS 60 V Gate-Source voltage VGS ±20 V ID 200 mA Pulsed Drain Current IDM 500 mA Power dissipation PD 400 mW RthJA 312.5 °C/W T J , T stg -55~150 °C Maximum Drain current Maximum Junction-to-Ambient Operating Junction and Storage temperature range Electrical Characteristics Characteristic (Ta=25° C) Symbol Test Condition Min. Typ. Max. Unit Drian-Source breakdown voltage BVDSS ID =10µA, VGS =0 60 - - V Gate-Threshold voltage VGS(t h) ID =1mA, V DS =VGS 0.8 2.1 3.0 V Zero Gate voltage drain current IDSS VDS =48V, V GS =0 - - 1 µA Gate-body leakage IGSS VDS =0V, VGS =±15V - - ±100 nA On-state drain current * ID(on) VDS =10V, V GS =4.5V 75 350 - mA VGS =4.5V, ID =0.075A - 4.5 5.3 Ω VGS =10V, I D =0.5A - 2.4 5.0 Ω - 4.4 9.0 Ω 100 - - mS Drain-Source on-resistance * RDS(ON) Drain-Source on-resistance * RDS(ON) Forward transconductance * g fs VDS =10V, I D =0.2A Input capacitance C iss VDS =25V, V GS =0, f=1MHz - 22 60 pF Output capacitance C oss VDS =25V, V GS =0, f=1MHz - 11 25 pF Reverse Transfer capacitance C rss VDS =25V, V GS =0, f=1MHz - 2 5 pF Turn-on time tON - - 10 ns Turn-off time tOFF - - 10 ns TJ =125℃ VDD=15V, ID =0.5A VGEN =10V, RG =25Ω VDD=15V, ID =0.5A VGEN =10V, RG =25Ω *. Pulse test : Pulse width≤300us, Duty cycle≤2.0% KST-9078-003 2 STK7000 Electrical Characteristic Curves Fig. 1 ID - VDS Fig. 2 ID - VGS Fig. 3 RDS(on) - ID Fig. 4 C - VD S Fig. 5 VGS - Qg Fig. 6 RDS(on) - TJ KST-9078-003 3 STK7000 Fig. 7 RDS(on) - VGS Fig. 8 IS - V SD Fig. 9 VGS( th) - TJ Fig. 1 ID - VDS µ KST-9078-003 4