SUF620EF Semiconductor P-Channel Enhancement-Mode MOSFET Description • High speed switching application. • Analog switch application. Features • Low threshold voltage • Two STJ828 Chips in SOT-563F Package. Ordering Information Type NO. SUF620EF Marking X Package Code SOT-563F Outline Dimensions unit : 3 Q2 2 mm 1 Q1 4 5 6 PIN Connections 1. Source 1 2. Gate 1 3. Drain 2 4. Source 2 5. Gate 2 6. Drain1 KST-J016-000 1 SUF620EF Absolute maximum ratings (Q1,Q2 Common) Characteristic (Ta=25°C) Symbol Ratings Unit Drain-Source voltage VDS -20 V Gate-Source voltage VGSS ±7 V DC Drain current ID -50 mA Drain Power dissipation PD 100 mW Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Characteristic Drian-Source breakdown voltage (Q1,Q2 Common) Symbol BVDSS Test Condition (Ta=25°C) Min. Typ. Max. ID=-100µA, VGS=0 -20 -0.5 Gate-Threshold voltage Vth ID=-0.1mA, VDS=-3V Drain cut-off current IDSS Gate leakage current IGSS Unit V -1.5 V VDS=-20V, VGS=0 -1 µA VGS=±7V, VDS=0 ±1 µA 40 Ω Drain-Source on-resistance RDS(ON) VGS=-2.5V, ID=-10mA Forward transfer admittance ｜Yfs｜ VDS=-3V, ID=-10mA 15 mS Input capacitance Ciss VDS=-3V, VGS=0, f=1MHz 10.4 pF Output capacitance Coss VDS=-3V, VGS=0, f=1MHz 8.4 pF Reverse Transfer capacitance Crss VDS=-3V, VGS=0, f=1MHz 2.8 pF 0.15 ㎲ 0.13 ㎲ Turn-on time tON Turn-off time tOFF VDD=-3V, ID=-10mA VGEN=0~-2.5V VDD=-3V, ID=-10mA VGEN=0~-2.5V *. Switching Time Test Circuit = Ω KST-J016-000 2 SUF620EF Electrical Characteristic Curves Fig2 ID - VDS Fig1 ID - VDS ℃ ℃ Fig4 ID - VGS Fig3 IDR - VDS ℃ 100℃ - ℃ ℃ Fig5 ｜Yfs｜ - ID Fig6 C - VDS ℃ ℃ KST-J016-000 3 SUF620EF Fig7 VDS(on) - ID Fig8 t - ID - ℃ Ω ℃ Fig9 PD - Ta KST-J016-000 4