ERICSSON PTF10111

PTF 10111
6 Watts, 1.5 GHz
GOLDMOS™ Field Effect Transistor
Description
The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier
applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of
gain. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
•
Performance at 1.5 GHz, 28 Volts
- Output Power = 6 Watts
- Efficiency = 50% Typ
- Power Gain = 16 dB Typ
•
Full Gold Metallization
•
Silicon Nitride Passivated
•
100% Lot Traceability
Typical Output Power vs. Input Power
Output Power (Watts)
8
7
6
1011
1
5
A-12
3456
9820
4
3
VDD = 28V
IDQ = 75 mA
f = 1.5 GHz
2
1
0
0.0
0.1
0.2
0.3
0.4
0.5
Input Power (Watts)
Package 20222
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation at Tflange = 25°C
PD
Above 25°C derate by
36
Watts
0.208
W/°C
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RqJC
4.8
°C/W
e
1
e
PTF 10111
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 40 mA
V(BR)DSS
65
68
—
Volts
Drain-Source Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 0.5 A
gfs
—
0.2
—
Siemens
Symbol
Min
Typ
Max
Units
Gps
15.0
16
—
dB
P-1dB
6
7
—
Watts
hD
45
50
—
%
Y
—
—
30:1
—
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz)
Power Output at 1 dB Compressed
(VDD = 28 V, IDQ = 75 mA, f = 1.5 GHz)
Drain Efficiency
(VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz—
all phase angles at frequency of test)
60
Efficiency (%)
50
15
Gain (dB)
90
14
80
Gain
70
60
11
50
Efficiency (%)
40
VDD = 28 V
30
8
IDQ = 75 mA
20
Output Pow er (W)
10
5
0
1300
1400
1500
1600
1700
Broadband Test Fixture Performance
16
Output Power & Efficiency
Gain (dB)
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
Gain (dB)
40
VDD = 28 V
14
-305
IDQ = 75 mA
POUT = 6 W
20
-15
13
Return Loss (dB)
12
1450
Frequency (MHz)
1475
1500
1525
Frequency (MHz)
2
10
-25
0
-35
1550
Return Loss (dB) Efficiency (%)
Typical Performance
e
PTF 10111
Intermodulation Distortion vs. Output Power
Output Power vs. Supply Voltage
-10
VDD = 28 V
IDQ = 75 mA
f1 = 1500.0 MHz
f2 = 1500.1 MHz
-20
9
IMD (dBc)
Output Power (Watts)
10
8
7
IDQ = 75 mA
f = 1500 MHz
6
-30
IM3
IM5
-40
IM7
-50
-60
5
24
26
28
30
32
-70
34
0
Supply Voltage (Volts)
Power Gain vs. Output Power
Cds and Cgs (pF)
IDQ = 75 mA
IDQ = 38 mA
IDQ = 19 mA
VDD = 28 V
f = 1.5 Hz
10
9
0.0
0.1
1.0
20
18
16
14
12
10
8
6
4
2
0
4
5
6
7
8
10.0
5
VGS = 0 V
f = 1 MHz
3
2
Cds
1
Crss
0
0
10
20
30
Supply Voltage (Volts)
Bias Voltage vs. Temperature
1.03
Voltage normalized to 1.0 V
Series show current (A)
1.02
1.01
0.05
1
0.145
0.99
0.24
0.98
0.335
0.43
0.97
0.525
0.96
-20
30
80
Temp. (°C)
3
4
Cgs
Output Power (Watts)
Bias Voltage (V)
Power Gain (dB)
11
3
Capacitance vs. Supply Voltage
13
12
2
Output Power (Watts-PEP)
15
14
1
130
40
Crss
22
e
PTF 10111
Impedance Data
(VDD = 28 V, IDQ = 75 mA, POUT = 6 W)
D
Z Source
Z Load
G
S
Z Source W
Frequency
Z Load W
GHz
R
jX
R
jX
1.3
9.0
2.5
11.5
6.0
1.4
6.6
0.6
12.0
6.5
1.5
6.8
-1.0
11.5
7.3
1.5
6.9
-1.6
10.5
8.2
1.5
7.9
-0.6
9.0
5.4
1.6
8.3
0.2
9.1
4.9
1.7
8.2
0.5
10.0
4.0
Z0 = 50 W
Typical Scattering Parameters
(VDS = 28 V, ID = 300 mA)
f
(MHz)
S11
S21
Mag
Ang
100
200
300
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
0.867
0.832
0.843
0.844
0.852
0.862
0.868
0.874
0.882
0.886
0.893
0.899
0.907
0.905
0.903
0.898
0.896
0.892
0.889
0.885
0.882
0.880
-65
-77
-106
-123
-133
-140
-146
-151
-155
-158
-161
-164
-167
-170
-173
-175
-177
-179
178
176
173
171
Mag
21.8
19.2
14.4
11.0
8.71
7.08
5.79
4.80
4.05
3.48
3.04
2.69
2.43
2.19
2.00
1.83
1.71
1.60
1.52
1.45
1.40
1.37
S12
S22
Ang
Mag
Ang
Mag
Ang
131
123
97
81
69
59
50
42
35
29
24
19
14
9
4
0
-5
-9
-13
-17
-21
-25
0.010
0.011
0.013
0.014
0.013
0.011
0.009
0.007
0.006
0.004
0.003
0.003
0.005
0.007
0.008
0.011
0.013
0.016
0.020
0.023
0.023
0.021
42
34
18
4
-7
-15
-19
-19
-16
-7
20
57
74
80
83
85
86
83
78
69
59
60
0.801
0.765
0.740
0.744
0.774
0.815
0.836
0.851
0.861
0.869
0.885
0.897
0.912
0.921
0.928
0.929
0.933
0.934
0.937
0.940
0.944
0.950
-41
-50
-72
-88
-98
-107
-116
-123
-129
-133
-137
-141
-145
-148
-151
-154
-157
-159
-161
-163
-165
-168
4
e
PTF 10111
Test Circuit
Test Circuit Block Diagram for f = 1.5 GHz
DUT
C1, C7–9
C2, C3
C10, C11
C4, C5
C6
C12
l1
l2
l3
l4
l5
l6
l1
PTF 10111
33 pF, Capacitor ATC 100 B
2.2 pF, Capacitor ATC 200 B
0.1 mF, 50 V, Capacitor
1.5 pF, Capacitor ATC 100 A
2.0 pF, Capacitor ATC 100 A
100 mF, 50 V, Electrolytic Capacitor
0.21 l 1.5 GHz
Microstrip 50 W
0.037 l 1.5 GHz
Microstrip 33.3 W
L1, L2
R1, R2, R3
Circuit Board
Placement Diagram (not to scale)
5
0.045 l 1.5 GHz
Microstrip 18.5 W
0.13 l 1.5 GHz
Microstrip 12.4 W
0.07 l 1.5 GHz
Microstrip 19.8 W
0.20 l 1.5 GHz
Microstrip 22 W
0.18 l 1.5 GHz
Microstrip 50 W
3 Turn, #22 AWG, 0.120” I.D.
10 K, 1/4 W Resistor
.028" Dielectric Thickness, er = 4.0,
AlliedSignal, G200, 2 oz. copper
e
PTF 10111
Artwork (1 inch
)
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
6
Specifications subject to change without notice.
L3
© 1998 Ericsson Inc.
EUS/KR 1301-PTF 10111 Uen Rev. A 02-18-99