PTF 10111 6 Watts, 1.5 GHz GOLDMOS™ Field Effect Transistor Description The PTF 10111 is a 6 watt LDMOS FET intended for large signal amplifier applications to 1.5 GHz. It operates @ 50% efficiency and 16 dB of gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. • Performance at 1.5 GHz, 28 Volts - Output Power = 6 Watts - Efficiency = 50% Typ - Power Gain = 16 dB Typ • Full Gold Metallization • Silicon Nitride Passivated • 100% Lot Traceability Typical Output Power vs. Input Power Output Power (Watts) 8 7 6 1011 1 5 A-12 3456 9820 4 3 VDD = 28V IDQ = 75 mA f = 1.5 GHz 2 1 0 0.0 0.1 0.2 0.3 0.4 0.5 Input Power (Watts) Package 20222 Maximum Ratings Parameter Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ±20 Vdc Operating Junction Temperature TJ 200 °C Total Device Dissipation at Tflange = 25°C PD Above 25°C derate by 36 Watts 0.208 W/°C Storage Temperature Range TSTG –40 to +150 °C Thermal Resistance (Tflange = 70°C) RqJC 4.8 °C/W e 1 e PTF 10111 Electrical Characteristics (100% Tested) Characteristic Conditions Symbol Min Typ Max Units Drain-Source Breakdown Voltage VGS = 0 V, ID = 40 mA V(BR)DSS 65 68 — Volts Drain-Source Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1 mA Gate Threshold Voltage VDS = 10 V, ID = 75 mA VGS(th) 3.0 — 5.0 Volts Forward Transconductance VDS = 10 V, ID = 0.5 A gfs — 0.2 — Siemens Symbol Min Typ Max Units Gps 15.0 16 — dB P-1dB 6 7 — Watts hD 45 50 — % Y — — 30:1 — RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 75 mA, f = 1.5 GHz) Drain Efficiency (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 6 W, IDQ = 75 mA, f = 1.5 GHz— all phase angles at frequency of test) 60 Efficiency (%) 50 15 Gain (dB) 90 14 80 Gain 70 60 11 50 Efficiency (%) 40 VDD = 28 V 30 8 IDQ = 75 mA 20 Output Pow er (W) 10 5 0 1300 1400 1500 1600 1700 Broadband Test Fixture Performance 16 Output Power & Efficiency Gain (dB) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Gain (dB) 40 VDD = 28 V 14 -305 IDQ = 75 mA POUT = 6 W 20 -15 13 Return Loss (dB) 12 1450 Frequency (MHz) 1475 1500 1525 Frequency (MHz) 2 10 -25 0 -35 1550 Return Loss (dB) Efficiency (%) Typical Performance e PTF 10111 Intermodulation Distortion vs. Output Power Output Power vs. Supply Voltage -10 VDD = 28 V IDQ = 75 mA f1 = 1500.0 MHz f2 = 1500.1 MHz -20 9 IMD (dBc) Output Power (Watts) 10 8 7 IDQ = 75 mA f = 1500 MHz 6 -30 IM3 IM5 -40 IM7 -50 -60 5 24 26 28 30 32 -70 34 0 Supply Voltage (Volts) Power Gain vs. Output Power Cds and Cgs (pF) IDQ = 75 mA IDQ = 38 mA IDQ = 19 mA VDD = 28 V f = 1.5 Hz 10 9 0.0 0.1 1.0 20 18 16 14 12 10 8 6 4 2 0 4 5 6 7 8 10.0 5 VGS = 0 V f = 1 MHz 3 2 Cds 1 Crss 0 0 10 20 30 Supply Voltage (Volts) Bias Voltage vs. Temperature 1.03 Voltage normalized to 1.0 V Series show current (A) 1.02 1.01 0.05 1 0.145 0.99 0.24 0.98 0.335 0.43 0.97 0.525 0.96 -20 30 80 Temp. (°C) 3 4 Cgs Output Power (Watts) Bias Voltage (V) Power Gain (dB) 11 3 Capacitance vs. Supply Voltage 13 12 2 Output Power (Watts-PEP) 15 14 1 130 40 Crss 22 e PTF 10111 Impedance Data (VDD = 28 V, IDQ = 75 mA, POUT = 6 W) D Z Source Z Load G S Z Source W Frequency Z Load W GHz R jX R jX 1.3 9.0 2.5 11.5 6.0 1.4 6.6 0.6 12.0 6.5 1.5 6.8 -1.0 11.5 7.3 1.5 6.9 -1.6 10.5 8.2 1.5 7.9 -0.6 9.0 5.4 1.6 8.3 0.2 9.1 4.9 1.7 8.2 0.5 10.0 4.0 Z0 = 50 W Typical Scattering Parameters (VDS = 28 V, ID = 300 mA) f (MHz) S11 S21 Mag Ang 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 0.867 0.832 0.843 0.844 0.852 0.862 0.868 0.874 0.882 0.886 0.893 0.899 0.907 0.905 0.903 0.898 0.896 0.892 0.889 0.885 0.882 0.880 -65 -77 -106 -123 -133 -140 -146 -151 -155 -158 -161 -164 -167 -170 -173 -175 -177 -179 178 176 173 171 Mag 21.8 19.2 14.4 11.0 8.71 7.08 5.79 4.80 4.05 3.48 3.04 2.69 2.43 2.19 2.00 1.83 1.71 1.60 1.52 1.45 1.40 1.37 S12 S22 Ang Mag Ang Mag Ang 131 123 97 81 69 59 50 42 35 29 24 19 14 9 4 0 -5 -9 -13 -17 -21 -25 0.010 0.011 0.013 0.014 0.013 0.011 0.009 0.007 0.006 0.004 0.003 0.003 0.005 0.007 0.008 0.011 0.013 0.016 0.020 0.023 0.023 0.021 42 34 18 4 -7 -15 -19 -19 -16 -7 20 57 74 80 83 85 86 83 78 69 59 60 0.801 0.765 0.740 0.744 0.774 0.815 0.836 0.851 0.861 0.869 0.885 0.897 0.912 0.921 0.928 0.929 0.933 0.934 0.937 0.940 0.944 0.950 -41 -50 -72 -88 -98 -107 -116 -123 -129 -133 -137 -141 -145 -148 -151 -154 -157 -159 -161 -163 -165 -168 4 e PTF 10111 Test Circuit Test Circuit Block Diagram for f = 1.5 GHz DUT C1, C7–9 C2, C3 C10, C11 C4, C5 C6 C12 l1 l2 l3 l4 l5 l6 l1 PTF 10111 33 pF, Capacitor ATC 100 B 2.2 pF, Capacitor ATC 200 B 0.1 mF, 50 V, Capacitor 1.5 pF, Capacitor ATC 100 A 2.0 pF, Capacitor ATC 100 A 100 mF, 50 V, Electrolytic Capacitor 0.21 l 1.5 GHz Microstrip 50 W 0.037 l 1.5 GHz Microstrip 33.3 W L1, L2 R1, R2, R3 Circuit Board Placement Diagram (not to scale) 5 0.045 l 1.5 GHz Microstrip 18.5 W 0.13 l 1.5 GHz Microstrip 12.4 W 0.07 l 1.5 GHz Microstrip 19.8 W 0.20 l 1.5 GHz Microstrip 22 W 0.18 l 1.5 GHz Microstrip 50 W 3 Turn, #22 AWG, 0.120” I.D. 10 K, 1/4 W Resistor .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. copper e PTF 10111 Artwork (1 inch ) Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: [email protected] www.ericsson.com/rfpower 6 Specifications subject to change without notice. L3 © 1998 Ericsson Inc. EUS/KR 1301-PTF 10111 Uen Rev. A 02-18-99