ERICSSON PTF10133

PTF 10133
85 Watts, 860–960 MHz
GOLDMOS™ Field Effect Transistor
Description
•
•
The PTF 10133 is an internally matched 85 watt LDMOS FET
intended for cellular, GSM and D-AMPS applications. This device
operates at 50% efficiency with 13.5 dB of gain. Full gold metallization
ensures excellent device lifetime and reliability.
•
•
•
•
INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
Typical Output Power vs. Input Power
120
60
100
50
80
40
VDD = 28.0 V
IDQ = 1.0 A
f = 894 MHz
60
40
30
20
20
Efficiency (%)
Output Power (Watts)
Efficiency
1013
3
A-12
3456
9947
10
Output Pow er
0
0
0
1
2
3
4
5
6
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 1.0 A, f = 894 MHz)
Drain Efficiency
(VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz)
Load Mismatch Tolerance
(VDD = 28 V, POUT = 85 W, IDQ = 1.0 A, f = 894 MHz
—all phase angles at frequency of test)
Symbol
Min
Typ
Max
Units
Gps
12.5
13.5
—
dB
P-1dB
85
90
—
Watts
h
45
50
—
%
Y
—
—
10:1
—
All published data at TCASE = 25°C unless otherwise indicated.
e
1
e
PTF 10133
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 25 mA
V(BR)DSS
65
—
—
Volts
Drain-Source Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 3 A
gfs
—
3.0
—
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
205
Watts
1.18
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
0.85
°C/W
Typical Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
Gain
16
15
14
13
12
11
100
90
Gain
80
VDD = 28 V
IDQ = 1.0 A
Efficiency
70
60
50
10
40
860 865 870 875 880 885 890 895 900
50
16
40
Gain (dB)
12
30
VDD = 28 V
IDQ = 1.0 A
8
20
0
POUT = 85 W
Return Loss (dB) -10
10
4
0
-20
860 865 870 875 880 885 890 895 900
Frequency (MHz)
Frequency (MHz)
2
Efficiency
110
Output Pow er (W)
Return Loss
17
60
Efficiency (%)
Gain (dB)
120
Output Power & Efficiency
18
Broadband Test Fixture Performance
20
e
PTF 10133
Output Power vs. Supply Voltage
Capacitance vs. Supply Voltage *
300
48
250
90
80
70
60
IDQ = 1.0 A
f = 894 MHz
50
Cgs
40
200
32
150
24
Cds
100
16
Crss
50
40
8
0
24
26
28
30
32
34
36
0
0
10
Intermodulation Distortion vs. Output Power
30
40
Power Gain vs. Output Power
16
(as measured in a broadband circuit)
-10
IDQ = 1.0
VDD = 28 V, IDQ =1A
f1 = 894 MHz, f2 = 894.1 MHz
15
Power Gain (dB)
-20
20
Supply Voltage (Volts)
Supply Voltage (Volts)
3rd Order
-30
-40
5th
-50
7th
-60
-70
14
IDQ = 500
13
12
VDD = 28 V
f = 894 MHz
IDQ = 250
11
0
20
40
60
80
100
0.1
Output Power (Watts-PEP)
10.0
Output Power (Watts)
* This part is internally matched. Measurements of the
finished product will not yield these figures.
Bias Voltage vs. Temperature
1.03
Voltage normalized to 1.0 V
Series show current (A)
1.02
Bias Voltage (V)
IMD (dBc)
VGS = 0 V
f = 1 MHz
Crss (pF)
100
Cds & Cgs (pF)
Output Power (Watts)
110
1.01
1.00
0.86
0.99
2.5
0.98
4.16
0.97
5.8
7.42
0.96
9.06
0.95
-20
30
80
Temp. (°C)
3
130
1000.0
e
PTF 10133
Z Source
Z Load
Z0 = 50 W
0.1
D
(VDD = 28 V, POUT = 85 W, IDQ = 1.0 A)
W AR D
GE
Impedance Data
G
Z Load
S
jX
R
jX
3.2
-3.2
1.3
1.2
870
3.6
-3.2
1.3
1.1
880
4.1
-3.2
1.3
0.9
890
4.7
-3.1
1.3
0.8
900
5.3
-2.9
1.2
0.8
925
7.0
-2.0
1.2
0.7
942
8.1
-0.6
1.2
0.7
960
7.7
1.1
1.2
0.6
0.1
960 MHz
860 MHz
S
NG TH
VEL E
R
860
Z Source
0 .1
WA
<---
MHz
960 MHz
0.2
860 MHz
0 .0
Z Load W
DTOW ARD LOA
Z Source W
Frequency
0 .2
Typical Scattering Parameters
(VDS = 28 V, ID = 2 A per side)
f
(MHz)
Mag
S11
Ang
Mag
S21
Ang
Mag
S12
Ang
Mag
Ang
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
0.980
0.982
0.983
0.989
0.989
0.987
0.983
0.982
0.980
0.972
0.958
0.929
0.858
0.693
0.783
0.918
0.951
0.974
0.988
0.984
0.979
0.980
0.992
0.991
0.986
-178
-179
-180
179
179
179
178
177
176
175
174
171
168
173
-170
-172
-175
-177
-178
-179
-180
180
180
179
178
0.996
0.773
0.641
0.545
0.489
0.449
0.425
0.414
0.405
0.419
0.442
0.509
0.662
0.882
0.714
0.423
0.261
0.184
0.124
0.060
0.048
0.070
0.058
0.049
0.042
15.6
12.8
9.48
7.19
5.48
2.11
-0.90
-4.52
-10.2
-14.3
-19.9
-27.5
-42.4
-75.9
-125
-153
-167
-179
165
158
-154
179
166
156
149
0.010
0.008
0.006
0.005
0.003
0.002
0.002
0.001
0.001
0.001
0.001
0.005
0.013
0.030
0.028
0.022
0.020
0.019
0.018
0.017
0.018
0.018
0.018
0.019
0.021
-85.2
-85.3
-85.7
-85.3
-93.7
-74.5
-64.9
-68.5
-55.1
-88.5
-87.2
-105
-133
174
120
101
89.2
81.8
77.9
76.7
77.4
73.9
74.5
78.7
79.7
0.994
0.993
0.992
0.996
0.999
0.995
0.996
0.998
0.997
0.997
0.993
0.991
0.989
0.987
0.993
0.989
0.982
0.982
0.990
0.990
0.986
0.983
0.990
0.992
0.984
-177
-177
-178
-179
-179
-179
-179
-180
-180
180
180
179
179
179
179
179
179
178
178
178
178
178
177
178
178
4
S22
e
PTF 10133
Test Circuit
Test Circuit Schematic for f = 894 MHz
DUT
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
PTF 10133
0.040 l 894 GHz
0.096 l 894 GHz
0.098 l 894 GHz
0.073 l 894 GHz
0.107 l 894 GHz
0.110 l 894 GHz
0.250 l 894 GHz
0.081 l 894 GHz
0.178 l 894 GHz
0.040 l 894 GHz
LDMOS Field Effect Transistor
Microstrip 50 W
Microstrip 50 W
Microstrip 50 W
Microstrip 9.29 W
Microstrip 9.29 W
Microstrip 6.98 W
Microstrip 77.9 W
Microstrip 6.98 W
Microstrip 50 W
Microstrip 50 W
C1, C3, C5, C10
C2
C4
C6
C7
C8
C9
R1, R2, R3
Circuit Board
Circuit Board
Components Layout (not to scale)
5
Capacitor, 36 pF
ATC 100 B
Capacitor, 4.3 pF
ATC 100 B
Capacitor, 6.2 pF
ATC 100 B
Capacitor, 0.1 mF, 50 V
Digi-Key P4525-ND
Capacitor, 100 mF, 50 V Digi-Key P5182-ND
Capacitor, 2.0 pF
ATC 100 B
Capacitor, 0.6-6 pF
ATC 100 B
Resistor, 220 W
Digi-Key 1KQBK
er = 4.0, .028 Dielectric Thickness, 1 Oz.
.028" Dielectric Thickness, er = 4.0,
AlliedSignal, G200, 2 oz. copper
e
PTF 10133
Artwork (1 inch
)
Package Mechanical Specifications
Package 20248
Unless otherwise specified
all tolerance ±0.005”
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Pins: 1.Drain 2.Source 3.Gate
Lead Thickness: 0.004 +0.002/-0.001”
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
6
Specifications subject to change without notice.
L3
© 1998 Ericsson Inc.
EUS/KR 1301-PTF 10133 Uen Rev. A 12-01-99