ERICSSON PTF102028

PTF 102028
18 Watts, 860–960 MHz
GOLDMOS ® Field Effect Transistor
Description
The PTF 102028 is an 18–watt GOLDMOS FET intended for large signal amplifier applications 860 to 960 MHz. It operates with 55% efficiency and 15 dB gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability.
•
Performance at 960 MHz, 26 Volts
- Output Power = 18 Watts Min
- Power Gain = 15 dB Typ
- Efficiency = 55% Typ
•
•
•
•
•
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
80
20
Output Pow er
Efficiency
70
16
60
12
50
VDD = 26 V
IDQ = 130 mA
f = 960 MHz
8
4
0
0.0
0.3
0.5
0.8
40
Efficiency (%)x
Output Power (Watts)
24
102
028
123
456
985
5A
30
20
1.0
Input Power (Watts)
Package 20251
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz)
Power Output at 1 dB Compression
(VDD = 26 V, IDQ = 130 mA, f = 960 MHz)
Drain Efficiency
(VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz)
Load Mismatch Tolerance
(VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz—
all phase angles at frequency of test)
Symbol
Min
Typ
Max
Units
Gps
14
15
—
dB
P-1dB
18
20
—
Watts
h
50
55
—
%
Y
—
—
5:1
—
All published data at TCASE = 25°C unless otherwise indicated.
e
1
e
PTF 102028
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 25 mA
V(BR)DSS
65
—
—
Volts
Drain-Source Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 0.5 A
gfs
—
0.9
—
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
58
Watts
0.33
W/°C
Above 25°C derate by
Storage Temperature
TSTG
150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
3.0
°C/W
Typical Performance
60
19
18
VDD = 26 V
17
IDQ = 130 mA
Efficiency
55
50
45
Gain
16
40
12
VDD = 26 V
IDQ = 130 mA
POUT = 18 W
Gain (dB)
8
40
880
900
920
940
35
960
4
920
930
30
0
-205
-10
10
-15
Return Loss (dB)
-20
0
-25
940
950
960
Frequency (MHz)
Frequency (MHz)
2
Efficiency
20
50
16
Return Loss
Efficiency (%)
65
15
860
60
70
Output Pow er
Gain
21
Broadband Test Fixture Performance
20
Efficiency (%)x
Gain (dB) & Output Power (W)x
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
e
102028
Output Power (at 1 dB Compression)
vs. Supply Voltage
Power Gain vs. Output Power
16
24
Output Power (Watts) X
15
IDQ = 65 mA
14
IDQ = 35 mA
VDD = 26 V
f = 960 MHz
13
22
20
18
IDQ = 130 mA
f = 960 MHz
16
14
12
0.1
1.0
10.0
22
100.0
27
Intermodulation Distortion vs. Output Power
Capacitance vs. Supply Voltage
(as measured in a broadband circuit)
-30
Cds and Cgs (pF)x
3rd Order
f1 = 959.900 MHz
f2 =960.000 MHz
5th
-40
7th
-50
5
40
Cgs
4
30
VGS = 0 V
f = 1 MHz
20
Cds
2
1
Crss
0
0
5
10
15
20
25
0
10
Bias Voltage vs. Temperature
Voltage normalized to 1.0 V
Series show current (A)
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
20
30
Supply Voltage (Volts) x
Output Power (Watts-PEP) X
1.03
0.075
0.585
0.33
0.84
1.095
1.35
30
80
Temp. (°C)
3
3
10
-60
Bias Voltage (V) x
IMD (dBc) X
-20
6
50
0
VDD = 26 V
IDQ = 130 mA
37
Supply Voltage (Volts) X
Output Power (Watts) X
-10
32
130
0
40
Crss (pF) x
Power Gain (dB) X
IDQ = 130
e
PTF 102028
R -->
Impedance Data
AT O
O W AR
D GE
Z Load
NER
D
Z Source
Z0 = 50 W
0. 2
VDD = 26 V, POUT = 18 W, IDQ = 130 mA
Z Load
0 .1
G
960 MHz
S
2.0
2.7
5.8
4.4
880
2.0
2.6
5.5
4.6
900
2.0
2.4
5.0
5.0
920
1.9
2.3
4.8
5.1
960
1.9
2.1
4.7
5.3
4
0.1
960
MHz
0.2
860
Z Source
0 .0
jX
V
R
ELE N
jX
G TH S
R
0.1
Z Load W
MHz
OA D TO W AR D L
Z Source W
Frequency
860 MHz
860 MHz
e
102028
Typical Scattering Parameters
(VDS = 26 V, ID = 500 mA)
f
(MHz)
S11
S21
S12
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
0.828
0.821
0.817
0.825
0.836
0.847
0.859
0.870
0.883
0.892
0.902
0.909
0.919
0.922
0.930
0.934
0.941
0.943
0.944
0.946
0.950
0.950
0.952
0.952
0.952
0.953
0.956
0.954
0.952
0.952
0.949
0.948
0.947
0.946
0.945
0.943
0.942
0.945
0.947
0.949
0.951
0.952
0.956
-120
-138
-148
-155
-160
-164
-167
-170
-172
-174
-176
-179
180
178
176
174
173
171
170
169
167
166
164
163
162
160
159
157
156
154
153
151
150
148
147
145
143
142
140
139
137
136
134
27.9
19.2
14.1
10.8
8.75
7.09
5.96
5.02
4.31
3.71
3.20
2.81
2.48
2.19
1.97
1.77
1.61
1.47
1.31
1.21
1.12
1.02
0.952
0.902
0.805
0.781
0.732
0.688
0.660
0.619
0.573
0.591
0.523
0.492
0.498
0.453
0.442
0.433
0.406
0.401
0.392
0.376
0.357
103
87.8
77.5
69.6
62.7
56.4
51.3
45.6
42.2
36.9
33.3
29.6
26.7
23.6
21.1
17.5
16.3
12.5
10.8
8.51
5.94
3.97
4.03
0.16
-0.92
-1.19
-5.01
-5.67
-6.40
-6.60
-7.30
-7.58
-7.59
-7.59
-7.60
-7.64
-6.40
-6.23
-6.20
-5.74
-5.20
-4.36
-4.30
0.015
0.014
0.013
0.011
0.009
0.007
0.006
0.007
0.008
0.011
0.014
0.016
0.020
0.022
0.025
0.028
0.032
0.035
0.039
0.043
0.046
0.049
0.053
0.057
0.060
0.065
0.068
0.072
0.078
0.084
0.085
0.097
0.096
0.106
0.113
0.119
0.124
0.134
0.135
0.150
0.154
0.171
0.171
20.6
10.7
6.0
6.5
9.7
20.7
41.5
64.2
83.2
92.6
97.9
98.5
98.6
98.7
99.3
98.6
98.3
95.8
95.4
92.5
91.7
91.4
90.5
87.1
87.6
86.6
84.9
84.9
84.2
83.9
83.7
83.1
82.2
81.6
81.4
80.9
79.8
79.6
79.5
80.1
79.4
79.0
76.1
0.597
0.576
0.571
0.602
0.628
0.661
0.698
0.723
0.754
0.783
0.805
0.831
0.845
0.860
0.880
0.890
0.904
0.916
0.922
0.930
0.937
0.945
0.945
0.955
0.951
0.958
0.955
0.963
0.953
0.967
0.950
0.959
0.950
0.949
0.953
0.952
0.947
0.957
0.953
0.946
0.955
0.950
0.949
-65.9
-79.6
-91.7
-102
-110
-118
-124
-130
-135
-140
-144
-149
-152
-155
-158
-161
-164
-166
-168
-171
-172
-174
-176
-178
-180
178
177
175
173
172
170
169
167
166
163
163
160
159
157
156
153
153
150
5
S22
e
PTF 102028
Test Circuit
J2
J1
Test Circuit Schematic for f = 960 MHz
DUT
l1
l2
l3
l4
l5
PTF 102028
0.098 l 960 MHz
0.050 l 960 MHz
0.139 l 960 MHz
0.256 l 960 MHz
0.040 l 960 MHz
Microstrip 50 W
Microstrip 8.4 W
Microstrip 8.4 W
Microstrip 13.9 W
Microstrip 50 W
C1, C2, C4, C8
C3
C5
C6
C7
J1, J2
L1
R1, R2, R3
Circuit Board
Assembly Diagram (not to scale)
6
Capacitor, 36 pF
ATC 100 B
Capacitor, 4.7 pF
ATC 100 B
Capacitor, 0.1, µF, 50 V
Digi-Key P4525-ND
Capacitor, 100 µF, 50 V
Digi-Key P5182-ND
Capacitor, 0.3 pF, 50 V
ATC 100 B
Connector, SMA, Female, Panel Mount
Ericsson, # RPM 513 412/53
4 Turns, 20 AWG, .120 Dia I.D.
N/A
Resistor, 220 ohm
Digi-Key 2.2 QBK
.031 “ Thick, er = 4.0, AlliedSignal, G200,
2 oz. copper
e
102028
Test Circuit
Artwork ( not to scale )
Case Outline Specifications
Package 20251
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
7
Specifications subject to change without notice.
L3
© 2000 Ericsson Inc.
EUS/KR 1522-PTF 102028 Uen Rev. A 11-29-00