ERICSSON PTF10065

PTF 10065
30 Watts, 1.93–1.99 GHz
GOLDMOS ® Field Effect Transistor
Description
The PTF 10065 is a 30–watt GOLDMOS FET intended for PCS
amplifier applications from 1.93 to 1.99 GHz. It typically operates with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
•
INTERNALLY MATCHED
•
Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 30 Watts Min
- Power Gain = 11.0 dB Typ
•
Full Gold Metallization
•
Silicon Nitride Passivated
•
Excellent Thermal Stability
•
100% Lot Traceability
Output Power and Efficiency vs. Input Power
40
80
70
30
60
50
Efficiency
20
40
30
VDD = 28 V
10
e
Efficiency
Output Power (Watts)
Output Power
10
065
123
456
992
1A
20
IDQ = 380 mA
f = 1.99 GHz
10
0
0
0
1
2
3
Input Power (Watts)
Package 20237
RF Specifications (100% Tested)
Characteristic
Gain
(VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.93, 1.99 GHz)
ACPR (40 Walsh Codes)
(VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 mA, f = 1.99 GHz)
(VDD = 28 V, POUT = 3 W(CDMA), IDQ = 380 mA, f = 1.99 GHz)
Symbol
Min
Typ
Max
Units
Gps
—
11.0
—
dB
- 50
—
—
dBc
- 62
—
—
dBc
±885 KHz
ACPR
±1.98 MHz
ACPR
Gain Flatness
(VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.930–1.990 GHz)
GDf
—
—
0.7
dB
Drain Efficiency
(VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.99 GHz)
hD
9
—
—
%
All published data at TCASE = 25°C unless otherwise indicated.
(table continues next page)
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1
e
PTF 10065
RF Specifications (cont.) (100% Tested)
Characteristic
Power Output at 1 dB Compressed
(VDD = 28 V, IDQ = 380 mA, f = 1.99 GHz)
Symbol
Min
Typ
Max
Units
P-1dB
30
—
—
Watts
Y
—
—
10:1
—
Rtn Loss
10
—
—
dB
f
–10
—
+10
Deg.
Symbol
Min
Typ
Max
Units
V(BR)DSS
62
—
—
Volts
Load Mismatch Tolerance
(VDD = 28 V, POUT = 30 W, IDQ = 380 mA,
f = 1.99 GHz—all phase angles at frequency of test)
Input Return Loss
(VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.93, 1.99 GHz)
Insertion Phase (Referenced to Correlation Devices)
(VDD = 28 V, POUT = 3 W, IDQ = 380 mA, f = 1.96 GHz)
Electrical Characteristics (cont.) (100% Tested) (100% Tested)
Characteristic
Conditions
Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA
Zero Gate Voltage Drain Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
—
3.8
—
Volts
Forward Transconductance
VDS = 10 V, ID = 6 A
gfs
—
1.8
—
Siemens
Gate-Source Leakage
VGS = 10 V
IGSsf
—
—
1
mA
Gate Quiescent Voltage
VDS = 28 V, ID = 380 mA
VGS(q)
3.0
—
5.0
V
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
62
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
120
Watts
0.7
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
1.4
°C/W
2
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PTF 10065
Typical Performance
80
80
x
Efficiency (% )
11
Gain
60
VDD = 28 V
Gain (dB)
IDQ = 380 m A
50
10
40
Output Power (W )
9
1930
1945
30
1960
1975
P OUT = 30 W
Gain
-605
-15
50
-25
10
Return Loss
20
1990
9
1930
1945
1960
1975
-35
40
1990
Frequency (MHz)
Gain vs. Frequency
Power Gain vs. Output Power
12.0
12
IDQ = 380 mA
11
11.8
9
Gain (dB) x
10
IDQ = 180 mA
8
7
6
5
VDD = 28 V
f = 1990 MHz
IDQ = 90 mA
0
10
11.6
VDD = 28 V
11.4
IDQ = 380 mA
POUT = 3 W
11.2
4
11.0
1930
1000
1940
1950
Output Power (Watts)
1960
1970
1980
1990
Frequency (MHz)
ACPR vs. W-CDMA Output Power
Output Power (@ 1 dB Compression)
vs. Supply Voltage
(as measured in a broadband circuit)
-30
40
VDD = 28 V
35
IMD (dBc) x
Output Power (Watts)
70
11
Fre que ncy (M Hz)
Power Gain (dB)
VDD = 28 V, IDQ = 380 mA
Efficiency
Gain (dB) x
70
Return Loss (dB) xx Efficiency (%)
Broadband Test Fixture Performance
12
Output Power & Efficiency
12
Typical P OUT , Gain & Efficiency (at P-1dB)
vs. Frequency
30
25
20
IDQ = 380 mA
f = 1990 MHz
15
IDQ = 380 mA
-40
f = 1930 MHz
f = 1990 MHz
-50
f = 1960 MHz
-60
10
24
25
26
27
28
29
30
30
Supply Voltage (Volts)
35
40
Output Power (dBm)
3
45
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PTF 10065
Typical Performance
(cont.)
Gate-Source Voltage vs. Case Temperature
Capacitance vs. Supply Voltage *
Voltage normalized to 1.0 V
Series show current (A)
1.02
1.01
1.00
0.200
0.99
0.692
0.98
1.183
0.97
1.675
2.167
0.96
20
40
60
80
6
5
Cgs
4
60
3
Cds
40
2
20
1
Crss
0
0.95
0
VGS = 0 V
f = 1 MHz
80
2.658
-20
7
100
Cds and Cgs (pF)
Gate-Source Voltage
120
0
0
100
Crss
1.03
10
20
30
40
Supply Voltage (Volts)
Case Temperature (°C)
* This part is internally matched. Measurements of the
finished product will not yield these results.
Impedance Data
(VDD = 28 V, POUT = 30 W, IDQ = 380 mA)
Z0 = 50 W
D
Z Source
Z Load
G
S
Z Source W
Frequency
Z Load W
MHz
R
jX
R
jX
1930
11.2
-10.50
2.79
-4.32
1945
11.8
-9.23
2.62
-4.23
1960
12.4
-8.01
2.45
-4.14
1975
13.0
-6.79
2.27
-4.05
1990
13.6
-5.56
2.10
-3.96
4
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PTF 10065
Test Circuit
Test Circuit Schematic for f = 1990 MHz
DUT
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
PTF 10065
0.072 l 1990 MHz
0.118 l 1990 MHz
0.063 l 1990 MHz
0.043 l 1990 MHz
0.045 l 1990 MHz
0.097 l 1990 MHz
0.028 l 1990 MHz
0.244 l 1990 MHz
0.250 l 1990 MHz
0.110 l 1990 MHz
LDMOS Transistor
Microstrip 50 W
Microstrip 50 W
Microstrip 50 W
Microstrip 50 W
Microstrip11.23 W
Microstrip 9.97 W
Microstrip 9.97 W
Microstrip 50 W
Microtrip 67.35 W
Microstrip 80.25 W
C2, C10
C3
C4, C8, C1, C7
C5
C6
C9
J1, J2
L1
L2
R1, R2
R3
PCB
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PTF 10065
Assembly Diagram (not to scale)
5
Capacitor, 10 µF, 35V
Digi-Key PC56106-ND
Capacitor, 0.1 µF
Digi-Key P4525-ND
Capacitor, 10pF
100B 100
Capacitor, 1.2 pF
100B 1R2
Capacitor, 0.7 pF
100B 0R7
Capacitor, 0.1 µF
ATC 200B
Connector, SMA, Female, Panel Mount
Inductor, 15 nH
4 mm Ferrite Bead
Philips BD 53/3/4.6-452
Resistor, 220 ohm 1/4W Digi-Key P220ECT-ND
Resistor, 1.0 ohm
Digi-Key P1.0 ECT
0.031” Thick, 2 oz Copper Both Sides, AlliedSignal
G200
e
PTF 10065
Test Circuit
(cont.)
e
ERICSSON
10048/10144_D
PTF 10065
Artwork (not to scale)
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
6
Specifications subject to change without notice.
L3
© 2000 Ericsson Inc.
EUS/KR 1522-PTF 10065 Uen Rev. A 12-14-00