ERICSSON PTF10153

PTF 10153
60 Watts, 1.8–2.0 GHz
GOLDMOS ® Field Effect Transistor
Description
The PTF 10153 is an internally matched 60–watt GOLDMOS FET
intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It
operates with 40% efficiency and 11.5 dB minimum gain. Nitride
surface passivation and full gold metallization ensure excellent device lifetime and reliability.
90
60
80
70
50
60
50
40
30
40
30
VDD = 28 V
20
IDQ = 650mA
f = 1880 MHz
20
10
INTERNALLY MATCHED
•
Guaranteed Performance at 1805, 1843, 1880
MHz, 28 V
- Output Power = 60 Watts Min
- Power Gain = 11.5 dB Min
•
Full Gold Metallization
•
Silicon Nitride Passivated
•
Back Side Common Source
•
Excellent Thermal Stability
•
100% Lot Traceability
Efficiency (%)
Output Power (Watts)
Typical Output Power & Efficiency
vs. Input Power
•
1015
3456 3
99
A-12
53
10
0
0
0
2
4
6
8
10
12
Input Power (Watts)
Package 20248
RF Specifications (100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gps
11.5
—
—
dB
P-1dB
60
—
—
Watts
Drain Efficiency
(VDD = 28 V, POUT = 60 W, IDQ = 650 mA,
f = 1805, 1843, 1880 MHz)
hD
40
—
—
%
Return Loss
(VDD = 28 V, POUT = 60 W, IDQ = 650 mA,
f = 1805, 1843, 1880 MHz)
—
—
—
–9.5
dB
Load Mismatch Tolerance
(VDD = 28 V, POUT = 60 W, IDQ = 650 mA, f = 1805
—all phase angles at frequency of test)
Y
—
—
10:1
—
Gain
(VDD = 28 V, POUT = 60 W, IDQ = 650 mA,
f = 1805, 1843, 1880 MHz)
Power Output at 1 dB Compression
(VDD = 28 V, IDQ = 650 mA, f = 1880 MHz)
All published data at TCASE = 25°C unless otherwise indicated.
e
1
e
PTF 10153
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 25 mA
V(BR)DSS
65
—
—
Volts
Zero Gate Voltage Drain Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 0.5 A
gfs
1.0
—
—
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation at
PD
237
Watts
1.35
W/°C
Above 25°C derate by
Storage Temperature Range
TSTG
–40 to +150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
0.74
°C/W
Typical Performance
76
10
62
Output Pow er (W)
9
8
48
VDD = 28 V
Efficiency (%)
34
IDQ = 650 mA
7
1750
1800
1850
1900
1950
20
2000
50
16
40
Gain
- 30
5
VDD = 28V
12
IDQ = 650 mA
-10
20
POUT = 60 W
8
10
-15
4
1800
Frequency (MHz)
Return Loss (dB)
1820
1840
1860
Frequency (MHz)
2
0
-25
1880
Return Loss
Gain (dB)
60
Efficiency (%)
Gain (dB)
Gain
11
90
Output Power & Efficiency
12
20
Efficiency
Broadband Test Fixture Performance
Typical POUT, Gain & Efficiency (at P-1dB)
vs. Frequency
e
PTF 10153
Bias Voltage vs. Temperature
Capacitance vs. Supply Voltage *
1.03
24
240
Voltage normalized to 1.0 V
Series show current (A)
VGS = 0 V
f = 1 MHz
160
18
Cgs
120
12
Cds
80
Bias Voltage (V)
200
Crss
Cds and Cgs (pF)
1.02
6
Crss
40
0
10
20
30
1.00
0.400
0.99
1.383
2.367
0.98
3.350
0.97
4.333
0.96
0
0
1.01
5.317
0.95
40
-20
Supply Voltage (Volts)
130
Power Gain vs. Output Power
14.0
100
IDQ = 650
Power Gain (dB)
Output Power (Watts)
80
Temp. (°C)
Output Power (@ 1 dB Compression)
vs. Supply Voltage
80
60
IDQ = 650mA
f =1880 MHz
40
13.5
IDQ = 550
13.0
IDQ = 450
VDD = 28 V
f = 1880 MHz
12.5
12.0
20
24
26
28
30
32
34
1
36
Supply Voltage (Volts)
10
100
Output Power (Watts)
Intermodulation Distortion vs. Output Power
2-Tone IMD vs. Output Power
(as measured in a broadband circuit)
(as measured in a broadband circuit)
-20
0
-10
VDD = 28V, IDQ = 650 mA
-20
f1 = 1880 MHz, f2 = 1879 MHz
-30
3rd Order
IMD (dBc)
IMD (dBc)
30
-30
5th
-40
-50
7th
VDD = 28 V
-40
IDQ = 650 mA
-50
f1 = 1880 MHz
f2 = 1879 MHz
-60
-60
-70
-70
0
20
40
60
10
80
30
50
70
Output Power (Watts-PEP)
Output Power (Watts-PEP)
* This part is internally matched. Measurements of the finished
product will not yield these results.
3
90
e
PTF 10153
Impedance Data
ARD G
EN E
R
-3.40
2.12
1.20
1842
3.05
-3.86
1.97
1.31
1880
4.07
-4.04
1.88
1.31
1930
4.56
-5.10
1.59
1.68
1960
6.10
-5.90
1.46
1.74
1990
7.50
-6.75
1.48
1.61
2000
8.75
-7.40
1.53
1.64
1805 MHz
0.1
Z Source
2000 MHz
0 .2
.3
Test Circuit
Block Diagram for f = 2 GHz
D.U.T.
l1
l2
l3
l4
l5
l6
l7
l8
l9
l10
PTF 10153
0.086 l 2 GHz
0.132 l 2 GHz
0.112 l 2 GHz
0.064 l 2 GHz
0.127 l 2 GHz
0.041 l 2 GHz
0.206 l 2 GHz
0.077 l 2 GHz
0.070 l 2 GHz
0.028 l 2 GHz
NPN RF Transistor
Microstrip 50 W
Microstrip 50 W
Microstrip 9.24 W
Microstrip 78 W
Microstrip 6.64 W
Microstrip 9.24 W
Microstrip 65 W
Microstrip 21.87 W
Microstrip 50 W
Microstrip 50 W
C1, C11
Capicitor, 10 µF
ATC 100 B
C2
Capicitor, 0.1 µF, 50 V
Digi-Key PCC103BCT
C3, C6, C4, C7
Capicitor, 10 pF
ATC 100 B
C5
Capicitor, 1.1 pF
ATC 100 B
C10
Capicitor, 0.30 pF
ATC 100 B
C12
Capicitor, 0.1 µF
ATC 100 B
R1, R2
Resistor, 220 W
Digi-Key 2.2QBK
R3
Resistor, 1.0 W
Digi-Key, # P1OCT
L1
Chip Inductor, 8 µH
Coilcraft A03T
L2
Chip Inductor, 2.7 µH
N/A
L3
Ferrite, 6 mm
N/A
PCB
0.050”, er = 6.0, 2 oz. Copper, TMM6, Rogers Corporation
4
0.4
2.27
0.3
1805
1805 MHz
0.2
jX
0.1
R
0.0
jX
<---
R
E LE
WAV
MHz
Z Load
2000 MHz
S
NG TH
Z Load W
DTOW ARD L OA
Z Source W
0.1
S
- W AV ELE NG T H
S T OW
G
Frequency
Z0 = 50 W
AT O
Z Load
0 .2
Z Source
R -->
D
VDD = 28 V, POUT = 60 W, IDQ = 650 mA
e
PTF 10153
Assembly Diagram (not to scale)
Artwork (not to scale)
Ericsson Inc.
Microelectronics
Morgan Hill, CA 95037 USA
1877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
5
Specifications subject to change without notice.
L3
© 1999, 2000 Ericsson Inc.
EUS/KR 1522-PTF 10153 Uen Rev. B 11-06-00