ERICSSON PTF10162

PTF 10162
18 Watts, 860–960 MHz
GOLDMOS™ Field Effect Transistor
Description
The PTF 10162 is an 18 Watt LDMOS FET intended for large signal
amplifier applications from 860 to 960 MHz. It operates at 55% efficiency
with 15 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
•
Performance at 960 MHz, 26 Volts
- Output Power = 18 Watts
- Power Gain = 15 dB Typ
- Efficiency = 55% Typ
•
•
•
•
•
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
100% Lot Traceability
Typical Output Power & Efficiency vs. Input Power
80
20
70
Output Power
16
60
Efficiency
12
50
8
VDD = 26 V
40
4
IDQ = 130 mA
f = 960 MHz
30
0
Efficiency (%)
Output Power (Watts)
24
1016
3456 2
985
A -1 2
5
20
0.0
0.3
0.5
0.8
1.0
Input Power (Watts)
Package 20222
RF Specifications (100% Tested)
Characteristic
Common Source Power Gain
(VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz)
Power Output at 1 dB Compression
(VDD = 26 V, IDQ = 130 mA, f = 960 MHz)
Drain Efficiency
(VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz)
Load Mismatch Tolerance
(VDD = 26 V, POUT = 18 W, IDQ = 130 mA, f = 960 MHz—
all phase angles at frequency of test)
Symbol
Min
Typ
Max
Units
Gps
14
15
—
dB
P-1dB
18
20
—
Watts
h
50
55
—
%
Y
—
—
5:1
—
All published data at TCASE = 25°C unless otherwise indicated.
e
1
e
PTF 10162
Electrical Characteristics (100% Tested)
Characteristic
Conditions
Symbol
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 25 mA
V(BR)DSS
65
—
—
Volts
Drain-Source Leakage Current
VDS = 28 V, VGS = 0 V
IDSS
—
—
1.0
mA
Gate Threshold Voltage
VDS = 10 V, ID = 75 mA
VGS(th)
3.0
—
5.0
Volts
Forward Transconductance
VDS = 10 V, ID = 0.5 A
gfs
—
0.9
—
Siemens
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDSS
65
Vdc
Gate-Source Voltage
VGS
±20
Vdc
Operating Junction Temperature
TJ
200
°C
Total Device Dissipation
PD
58
Watts
0.33
W/°C
Above 25°C derate by
Storage Temperature
TSTG
150
°C
Thermal Resistance (TCASE = 70°C)
RqJC
3.0
°C/W
Typical POUT , Gain & Efficiency (at P-1dB)
vs. Frequency
Output Power
Efficiency (%)
65
60
19
55
18
VDD = 26 V
Efficiency
50
IDQ = 130 mA
17
45
Gain
16
40
15
35
960
860
880
900
920
940
50
16
40
Gain
20
VDD = 26 V
Gain (dB)
12
IDQ = 130 mA
POUT = 18 W
8
Return Loss (dB)
4
920
Frequency (MHz)
930
940
Frequency (MHz)
2
950
30
0
- 20
5
-10
-15
10
-20
-25
0
960
Efficiency
60
70
Return Loss
21
Broadband Test Fixture Performance
20
Efficiency (%)
Gain (dB) & Output Power (W)
Typical Performance
e
PTF 10162
Output Power (at 1 dB Compression)
vs. Supply Voltage
Power Gain vs. Output Power
16
24
Output Power (Watts)
15
IDQ = 65 mA
14
IDQ = 35 mA
VDD = 26 V
f = 960 MHz
13
12
22
20
18
IDQ = 130 mA
f = 960 MHz
16
14
0.1
1.0
10.0
100.0
22
24
Output Power (Watts)
Intermodulation Distortion vs. Output Power
50
VDD = 26 V
40
Cds and Cgs (pF)
3rd Order
f1 = 959.900 MHz
-30
f2 =960.000 MHz
5th
-40
7th
-50
30
0
5
10
32
34
6
5
Cgs
4
30
VGS = 0 V
f = 1 MHz
20
15
20
2
10
1
Crss
0
25
10
Bias Voltage vs. Temperature
Voltage normalized to 1.0 V
Series show current (A)
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.075
0.33
0.585
0.84
1.095
1.35
0.95
-20
20
30
Supply Voltage (Volts)
Output Power (Watts-PEP)
1.03
0
20
40
Temp. (°C)
3
3
Cds
0
-60
Bias Voltage (V)
IMD (dBc)
IDQ = 130 mA
-20
28
Capacitance vs. Supply Voltage
(as measured in a broadband circuit)
0
-10
26
Supply Voltage (Volts)
60
80
100
0
40
Crss (pF)
Power Gain (dB)
IDQ = 130 mA
e
PTF 10162
--->
Impedance Data
OR
EN E
Z Load
T OW A
RD G
Z Source
RA T
D
Z0 = 50 W
0. 2
VDD = 26 V, POUT = 18 W, IDQ = 130 mA
Z Load
0 .1
G
960 MHz
S
2.0
2.7
5.8
4.4
880
2.0
2.6
5.5
4.6
900
2.0
2.4
5.0
5.0
920
1.9
2.3
4.8
5.1
960
1.9
2.1
4.7
5.3
4
0.1
960
MHz
0.2
860
Z Source
0 .0
jX
AV
R
ELE N
jX
G TH S
R
0.1
Z Load W
MHz
OA D TO W AR D L
Z Source W
Frequency
860 MHz
860 MHz
e
PTF 10162
Typical Scattering Parameters
(VDS = 26 V, ID = 500 mA)
f
(MHz)
S11
S21
S12
Mag
Ang
Mag
Ang
Mag
Ang
Mag
Ang
100
150
200
250
300
350
400
450
500
550
600
650
700
750
800
850
900
950
1000
1050
1100
1150
1200
1250
1300
1350
1400
1450
1500
1550
1600
1650
1700
1750
1800
1850
1900
1950
2000
2050
2100
2150
2200
0.828
0.821
0.817
0.825
0.836
0.847
0.859
0.870
0.883
0.892
0.902
0.909
0.919
0.922
0.930
0.934
0.941
0.943
0.944
0.946
0.950
0.950
0.952
0.952
0.952
0.953
0.956
0.954
0.952
0.952
0.949
0.948
0.947
0.946
0.945
0.943
0.942
0.945
0.947
0.949
0.951
0.952
0.956
-120
-138
-148
-155
-160
-164
-167
-170
-172
-174
-176
-179
180
178
176
174
173
171
170
169
167
166
164
163
162
160
159
157
156
154
153
151
150
148
147
145
143
142
140
139
137
136
134
27.9
19.2
14.1
10.8
8.75
7.09
5.96
5.02
4.31
3.71
3.20
2.81
2.48
2.19
1.97
1.77
1.61
1.47
1.31
1.21
1.12
1.02
0.952
0.902
0.805
0.781
0.732
0.688
0.660
0.619
0.573
0.591
0.523
0.492
0.498
0.453
0.442
0.433
0.406
0.401
0.392
0.376
0.357
103
87.8
77.5
69.6
62.7
56.4
51.3
45.6
42.2
36.9
33.3
29.6
26.7
23.6
21.1
17.5
16.3
12.5
10.8
8.51
5.94
3.97
4.03
0.16
-0.92
-1.19
-5.01
-5.67
-6.40
-6.60
-7.30
-7.58
-7.59
-7.59
-7.60
-7.64
-6.40
-6.23
-6.20
-5.74
-5.20
-4.36
-4.30
0.015
0.014
0.013
0.011
0.009
0.007
0.006
0.007
0.008
0.011
0.014
0.016
0.020
0.022
0.025
0.028
0.032
0.035
0.039
0.043
0.046
0.049
0.053
0.057
0.060
0.065
0.068
0.072
0.078
0.084
0.085
0.097
0.096
0.106
0.113
0.119
0.124
0.134
0.135
0.150
0.154
0.171
0.171
20.6
10.7
6.0
6.5
9.7
20.7
41.5
64.2
83.2
92.6
97.9
98.5
98.6
98.7
99.3
98.6
98.3
95.8
95.4
92.5
91.7
91.4
90.5
87.1
87.6
86.6
84.9
84.9
84.2
83.9
83.7
83.1
82.2
81.6
81.4
80.9
79.8
79.6
79.5
80.1
79.4
79.0
76.1
0.597
0.576
0.571
0.602
0.628
0.661
0.698
0.723
0.754
0.783
0.805
0.831
0.845
0.860
0.880
0.890
0.904
0.916
0.922
0.930
0.937
0.945
0.945
0.955
0.951
0.958
0.955
0.963
0.953
0.967
0.950
0.959
0.950
0.949
0.953
0.952
0.947
0.957
0.953
0.946
0.955
0.950
0.949
-65.9
-79.6
-91.7
-102
-110
-118
-124
-130
-135
-140
-144
-149
-152
-155
-158
-161
-164
-166
-168
-171
-172
-174
-176
-178
-180
178
177
175
173
172
170
169
167
166
163
163
160
159
157
156
153
153
150
5
S22
e
PTF 10162
Test Circuit
Test Circuit Schematic for f = 960 MHz
DUT
l1
l2
l3, l4
l5
l6
C1, C2, C5, C8
C3
C4
C6
C7
C9
L1
R1, R2, R3
Circuit Board
PTF 10162
Microstrip 50 W (0.098 l, 960 MHz)
Microstrip 8.4 W (0.025 l, 960 MHz)
Microstrip 8.4 W (0.084 l, 960 MHz)
Microstrip 13.9 W (0.256 l, 960 MHz)
Microstrip 50 W (0.040 l, 960 MHz)
Capacitor, 36 pF
ATC 100 B
Capacitor, 3.0 pF
ATC 100 B
Capacitor, 3.6 pF
ATC 100 B
Capacitor, 0.1 µF, 50 V
Digi-Key P4525-ND
Capacitor, 100 µF, 50 V
Digi-Key P5182-ND
Capacitor, 0.7pF
ATC 100 B
4 Turns, 20 AWG, .120 I.D.
N/A
Resistor, 220 W
Digi-Key 2.2 QBK
.028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2
oz. copper
Placement Diagram (not to scale)
6
e
Test Circuit
PTF 10162
(Check our Web site at www.ericsson.com/rfpower for Gerber files for this circuit.)
Artwork (1 inch
).
Package Mechanical Specifications
Package 20222
Unless otherwise specified
all tolerances ±0.005”
Ericsson Microelectronics
RF Power Products
Morgan Hill, CA 95037 USA
Pin Configuration: 1.Drain 2.Source 3.Gate
Lead Thickness: 0.005 +0.001/-0.002”
1-877-GOLDMOS (465-3667) United States
+46 8 757 4700 International
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
7
Specifications subject to change without notice.
L3
© 1999 Ericsson Inc.
EUS/KR 1301-PTF 10162 Uen Rev. A 12-06-99
e
Notes:
8