KIC7SZ86FU SEMICONDUCTOR SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT TECHNICAL DATA EXCLUSIVE OR GATE FEATURES ・Super High Speed : tPD=2.9ns(Typ.) into 50pF at VCC=5V. ・High Output Driver : ±24mA at VCC=3V. B ・Power Down High Impedance inputs/outputs. B1 ・Wide Operating Voltage Range : VCC(opr)=1.65~5.5V. 5 2 C A A1 C 1 MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC 4 H 3 SYMBOL RATING UNIT Supply Voltage Range VCC -0.5～6 V DC Input Voltage VIN -0.5～6 V DC Output Voltage VOUT -0.5～6 V Input Diode Current IIK -50~20 mA Output Diode Current IOK -50~20 mA DC Output Current IOUT ±50 mA DC VCC/Ground Current ICC ±50 mA Power Dissipation PD 200 mW Storage Temperature Tstg -65～150 ℃ Lead Temperature (10s) TL 260 ℃ D T DIM A A1 B B1 C D G H T MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 + 0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05 G USV MARKING Type Name T J Logic Diagram IN B IN A (1) (4) =1 (2) OUT Y PIN CONNECTION(TOP VIEW) VCC OUT Y 5 4 TRUTH TABEL A B Y H H L L H H 1 2 3 H L H IN B IN A GND L L L 2002. 5. 13 Revision No : 0 1/3 KIC7SZ86FU RECOMMENDED OPERATING CONDIITIONS CHARACTERISTIC SYMBOL RATING UNIT Supply Voltage VCC 1.65～5.5 V Input Voltage VIN 0～5.5 V VOUT 0～VCC V Operating Temperature Topr -40～85 ℃ Input Rise and Fall Time tr, tf Output Voltage 0～20 (VCC=1.8V, 2.5V±0.2V) 0～10 (VCC=3.3V±0.3V) ns/V 0～5 (VCC=5.0V±0.5V) ELECTRICAL CHARACTERISTICS DC Characteristics CHARACTERISTIC High Level TEST CONDITION SYMBOL VIH - Input Voltage Low Level VIL - VIN=VIH・VIL IOH=-100μA High Level VOH VOL MIN. TYP. MAX. MIN. MAX. 1.65~1.95 0.75× VCC - - 0.75× VCC - 2.3~5.5 0.7×VCC - - 0.7×VCC - - 0.25× VCC 1.65~1.95 - - 0.25× VCC 2.3~5.5 - - 0.3×VCC - 0.3×VCC 1.65 1.55 1.65 - 1.55 - 1.8 1.7 1.8 - 1.7 - 2.3 2.2 2.3 - 2.2 - 3.0 2.9 3.0 - 2.9 - 4.5 4.4 4.5 - 4.4 - 1.29 1.52 - 1.29 - IOH=-8mA 2.3 1.9 2.15 - 1.9 - IOH=-16mA 3.0 2.4 2.80 - 2.4 - IOH=-24mA 3.0 2.3 2.68 - 2.3 - 4.5 3.8 4.20 - 3.8 - 1.65 - 0.0 0.1 - 0.1 1.8 - 0.0 0.1 - 0.1 2.3 - 0.0 0.1 - 0.1 3.0 - 0.0 0.1 - 0.1 UNIT V V 4.5 - 0.0 0.1 - 0.1 IOL=4mA 1.65 - 0.08 0.24 - 0.24 IOL=8mA 2.3 - 0.10 0.3 - 0.3 IOL=16mA 3.0 - 0.15 0.4 - 0.4 IOL=24mA 3.0 - 0.22 0.55 - 0.55 IOL=32mA 4.5 - 0.22 0.55 - 0.55 0~5.5 - - ±1 - ±10 μA 0.0 - - 1 - 10 μA 1.65~5.5 - - 2.0 - 20 μA Input Leakage Current IIN VIN=5.5V, GND Power Off Leakage Current IOFF VIN or VOUT=5.5V Quiescent Supply Current ICC VIN=5.5V, GND 2002. 5. 13 VCC(V) 1.65 VIN=VIH or VIL IOL=100μA Low Level Ta=-40~85℃ IOH=-4mA IOH=-32mA Output Voltage Ta=25℃ Revision No : 0 2/3 KIC7SZ86FU AC Characteristics CHARACTERISTIC TEST CONDITION SYMBOL tPLH tPHL Propagation Delay (Figures 1,3) tPLH tPHL Input Capacitance CIN Power Dissipation Capacitance (Figure 2) CPD CL=15pF, RL=1MΩ CL=50pF, RL=500Ω (Note) Ta=25℃ Ta=-40~85℃ VCC(V) MIN. TYP. MAX. MIN. MAX. 1.65 2.0 6.9 13.8 2.0 14.5 1.8 2.0 5.7 11.5 2.0 12 2.5±0.2 0.8 3.8 8.0 0.8 8.5 3.3±0.3 0.5 3.0 5.7 0.5 6.0 5.0±0.5 0.5 2.4 5.0 0.5 5.4 3.3±0.3 1.5 3.5 6.2 1.5 6.5 5.0±0.5 0.8 2.9 5.4 1.0 5.8 0 - 4 - - - 3.3 - 25 - - - 5.0 - 31 - - - UNIT ns ns pF pF Note : CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (ICCD) at no output loading and operating at 50% duty cycle. (See Figure 2.) CPD is related to ICCD dynamic operating current by the exprssion : ICCD=CPD・VCC・fIN+ICC AC Loading and Waveforms VCC OUTPUT INPUT CL t r =3ns t f =3ns RL INPUT tw CL includes load and stray capacitance Input PRR=1.0MHz ; t w =500ns t PHL VCC 90% 50% 10% GND t PLH FIGURE 1. AC Test Circuit VCC VOH Out of Phase OUTPUT 50% t PLH 50% VOL t PHL A In Phase OUTPUT VOH 50% 50% INPUT VOL FIGURE 3. AC Waveforms Input=AC Waveform ; t r =tf =1.8ns; PRR=10MHz ; Duty Cycle=50% FIGURE 2. I CCD Test Circuit 2002. 5. 13 Revision No : 0 3/3