KIC7WZU04FK SEMICONDUCTOR SILICON MONOLITHIC CMOS DIGITAL INTEGRATED CIRCUIT TECHNICAL DATA Triple Inverter (unbuffer) FEATURES ・High output drive : ±8mA(min.) @VCC=4.5V. ・Super high speed operation : tpd 3.4ns(typ.) @VCC=5V, 50pF. ・Operation voltage range : VCC(opr)=1.65~5.5V. B C DIM A B 8 D D A E D 1 4 5 CHARACTERISTIC SYMBOL RATING UNIT Power Supply Voltage VCC -0.5~7 V DC Input Voltage VIN -0.5~7 V DC Output Voltage VOUT -0.5~7 V Input Diode Current IIK -50 mA Output Diode Current IOK ±50 mA DC Output Current IOUT ±50 mA DC VCC/ground Current ICC ±100 mA Power Dissipation PD 200 mW Storage Temperature Range Tstg -65～150 ℃ Lead Temperature (10s) TL 260 ℃ D E F G 0.5 0.2+0.05/-0.04 _ 0.1 0.7+ _ 0.04 0.12 + H 0 ~ 0.1 F MAXIMUM RATINGS (Ta=25℃) C MILLIMETERS _ 0.1 2.0 + _ 0.1 3.1+ _ 0.1 2.3 + H G US8 MARKING Type Name ZU04 Lot No. Logic Diagram 1 IN A OUT Y Truth Table A Y L H H L 2002. 5. 13 Revision No : 0 PIN CONNECTION(TOP VIEW) 1A 1 8 V CC 3Y 2 7 1Y 2A 3 6 3A GND 4 5 2Y 1/3 KIC7WZU04FK Recommended Operating Conditions CHARACTERISTIC SYMBOL Supply Voltage VCC Input Voltage VIN 1.5~5.5 Note2 : VCC=0V. V (Note1) 0~5.5 Topr Operating Temperature UNIT 1.8~5.5 VOUT Output Voltage Note1 : Data retention only. RATING V 0~5.5 (Note2) 0~VCC (Note3) V -40~85 ℃ Note3 : High or low state ELECTRICAL CHARACTERISTICS DC Characteristics CHARACTERISTIC High Level TEST CONDITION SYMBOL VIH - Input Voltage Low Level VIL VIN=GND VOL VIN=VCC MIN. MAX. 1.8~2.7 0.85× VCC - - 0.85× VCC - 3.0~5.5 0.8×VCC - - 0.8×VCC - - 0.15× VCC - 3.0~5.5 - - 0.2×VCC - 0.3×VCC 1.65 1.55 1.65 - 1.55 - 1.8 1.6 1.79 - 1.6 - 2.3 2.1 2.29 - 2.1 - 3.0 2.7 2.99 - 2.7 - 4.5 4.0 4.48 - 4.0 - IOH=-2mA 1.65 1.26 1.52 - 1.26 - IOH=-2mA 2.3 1.9 2.19 - 1.9 - IOH=-4mA 3.0 2.4 2.82 - 2.4 - IOH=-6mA 3.0 2.3 2.73 - 2.3 - 3.8 4.24 - 3.8 - - 0.01 0.2 - 0.2 1.8 - 0.01 0.2 - 0.2 2.3 - 0.01 0.2 - 0.2 3.0 - 0.01 0.3 - 0.3 4.5 - 0.01 0.5 - 0.5 IOL=2mA 1.65 - 0.10 0.24 - 0.24 IOL=2mA 2.3 - 0.12 0.3 - 0.3 IOL=4mA 3.0 - 0.19 0.4 - 0.4 IOL=6mA 3.0 - 0.29 0.55 - 0.55 IOL=8mA 4.5 - 0.29 0.55 - 0.55 - ±0.1 - ±1.0 μA μA IIN VIN=5.5V, GND 0~5.5 - Quiescent Supply Current ICC VIN=5.5V, GND 1.65~5.5 - - 1.0 - 10 1.8 - 0.2 - - - 2.5 - 2 - - - 3.3 - 5 - - - 5.0 - 15 - - - 2002. 5. 13 VOUT=Open ICCPEAK VIN=Adjust for Peak ICC Current Revision No : 0 V 4.5 Input Leakage Current Peak Supply Current in Analog Operation UNIT 1.65 VIN=VIH IOL=100μA Low Level MAX. - IOH=-8mA Output Voltage TYP. 1.8~2.7 - VOH Ta=-40~85℃ MIN. 0.15× VCC VIN=VIL IOH=-100μA High Level Ta=25℃ VCC(V) V mA 2/3 KIC7WZU04FK AC Characteristics CHARACTERISTIC TEST CONDITION SYMBOL tPLH tPHL Propagation Delay (Figures 1,3) CL=15pF, RL=1MΩ tPLH tPHL Input Capacitance CIN Power Dissipation Capacitance (Figure 2) CPD CL=50pF, RL=500Ω (Note) Ta=25℃ Ta=-40~85℃ VCC(V) MIN. TYP. MAX. MIN. MAX. 1.65 1.5 5.5 9.8 1.5 11.0 1.8 1.5 4.6 8.1 1.5 8.9 2.5±0.2 1.2 3.3 5.7 1.2 6.3 3.3±0.3 0.8 2.7 4.1 0.8 4.5 5.0±0.5 0.5 2.2 3.3 0.5 3.6 3.3±0.3 1.2 4.0 6.4 1.2 7.0 5.0±0.5 0.8 3.4 5.6 0.8 6.2 0 - 3 - - - 3.3 - 3.5 - - - 5.0 - 5.5 - - - UNIT ns ns pF pF Note : CPD is defined as the value of the internal equivalent capacitance which is derived from dynamic operating current consumption (ICCD) at no output loading and operating at 50% duty cycle. (See Figure 2.) CPD is related to ICCD dynamic operating current by the exprssion : ICCD=CPD・VCC・fIN+ICC AC Loading and Waveforms VCC VCC A OUTPUT INPUT CL RL CL includes load and stray capacitance Input PRR=1.0MHz ; t w =500ns Input=AC Waveform ; t r =tf =1.8ns PRR=variable ; Duty Cycle=50% FIGURE 1. AC Test Circuit t r =3ns INPUT FIGURE 2. ICCD Test Circuit t f =3ns 90% 50% 10% INPUT tw VCC GND t PHL t PLH VOH OUTPUT 50% 50% VOL FIGURE 3. AC Waveforms 2002. 5. 13 Revision No : 0 3/3