DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ243 P-CHANNEL MOS FET FOR SWITCHING The 2SJ243 is a P-channel vertical type MOS FET that is driven PACKAGE DIMENSIONS (in mm) at 2.5 V. 0.3 ± 0.05 Because this MOS FET can be driven on a low voltage and 0.1 +0.1 –0.05 because it is not necessary to consider the drive current, the Moreover, the 2SJ243 is housed in a super small mini-mold package so that it can help increase the mounting density on the D 0.8 ± 0.1 such as VCR cameras and headphone stereo systems. 1.6 ± 0.1 2SJ243 is ideal for driving the actuator of power-saving systems, 0 to 0.1 G printed circuit board and lower the mounting cost, contributing to S 0.2 miniaturization of the application systems. +0.1 –0 0.6 0.5 0.5 1.0 1.6 ± 0.1 FEATURES • Small mounting area: about 60 % of the conventional mini-mold 0.75 ± 0.05 package (SC-70) EQUIVALENT CIRCUIT • Can be directly driven by 3-V IC • Can be automatically mounted Drain (D) The internal diode in the right figure is a parasitic diode. The protection diode is to protect the product from damage due to static electricity. If there is a danger that an extremely high voltage will be applied across the gate and source in the Gate (G) Internal diode Gate protection diode actual circuit, a gate protection circuit such as an external PIN CONNECTIONS S: Source D: Drain G: Gate Source (S) constant-voltage diode is necessary. Marking: A1 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS RATING UNIT Drain to Source Voltage VDSS VGS = 0 –30 V Gate to Source Voltage VGSS VDS = 0 ±7 A Drain Current (DC) ID(DC) ±100 mA Drain Current (Pulse) ID(pulse) PW ≤ 10 ms Duty cycle ≤ 50 % ±200 mA Total Power Dissipation PT 3.0 cm2 × 0.64 mm, ceramic substrate used 200 mW Channel Temperature Tch 150 ˚C Operating Temperature Topt –55 to +80 ˚C Storage Temperature Tstg –55 to +150 ˚C Document No. D11215EJ1V0DS00 (1st edition) Date Published June 1996 P Printed in Japan 1996 2SJ243 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT –1.0 µA ±0.1 ±3.0 µA –2.3 V Drain Cut-Off Current IDSS VDS = –30 V, VGS = 0 Gate Leakage Current IGSS VGS = ±5 V, VDS = 0 Gate Cut-Off Voltage VGS(off) VDS = –3 V, ID = –10 µA –1.6 –1.9 Forward Transfer Admittance |yfs| VDS = –3 V, ID = 10 mA 20 30 Drain to Source On-State Resistance RDS(on)1 VGS = –2.5 V, ID = –1 mA 55 100 Ω Drain to Source On-State Resistance RDS(on)2 VGS = –4.0 V, ID = –10 mA 20 25 Ω Input Capacitance Ciss VDS = –5.0 V, VGS = 0, f = 1 MHz 16 pF Output Capacitance Coss 13 pF Reverse Transfer Capacitance Crss 2 pF Turn-On Delay Time td(on) VDD = –5V, ID = –10 mA 10 ns tr VGS(on) = –5 V, RG = 10 Ω 40 ns Turn-Off Delay Time td(off) RL = 500 Ω 130 ns Fall Time tf 80 ns Rise Time mS SWITCHING TIME MEASUREMENT CIRCUIT AND CONDITIONS (Resistive Load) VGS DUT RL Gate Voltage Waveform 10 % VGS(on) 90 % VDD ID RG td(on) tr td(off) tf PG. Drain Current Waveform 0 VGS 10 % 10 % ID 90 % τ τ = 1 µs Duty cycle ≤ 1 % 2 0 90 % 2SJ243 TYPICAL CHARACTERISTICS (TA = 25 ˚C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE PT - Total Power Dissipation - mW 240 dT - Derating Factor - % 100 80 60 40 20 20 0 40 60 80 100 120 140 160 3.0 cm2 × 0.64 mm Using ceramic substrate 200 160 120 80 40 0 30 TC - Case Temperature - ˚C FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT TRANSFER CHARACTERISTICS | yfs | - Forward Transfer Admittance - mS –100 VDS = –3 V Pulsed 150 ˚C TA = –25 ˚C –1 25 ˚C –0.1 75 ˚C –0.01 RDS(on) - Drain to Source On-State Resistance - Ω –0.001 –1.0 –1.5 –2.0 –2.5 –3.0 –3.5 VGS - Gate to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 30 ID = –0.1 A 20 ID = –10 mA 10 0 –1 –2 –3 –4 –5 –6 –7 VGS - Gate to Source Voltage - V –8 400 VDS = –3 V Pulsed TA = 75 ˚C 100 25 ˚C –25 ˚C 30 150 ˚C 10 3 1 –0.5 –1.0 –4.0 RDS(on) - Drain to Source On-State Resistance - Ω ID - Drain Current - mA –10 210 60 90 120 150 180 TA - Ambient Temperature - ˚C –3.0 –10 –30 ID - Drain Current - mA –100 –200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 120 VGS = –2.5 V Pulsed 100 75 ˚C 80 TA = –25 ˚C 25 ˚C 150 ˚C 60 40 20 –0.3 –0.6 –1 –2 –5 ID - Drain Current - mA –10 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 130 60 VGS = –4 V Pulsed Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-State Resistance - Ω 2SJ243 100 50 75 ˚C 25 ˚C TA = 150 ˚C 0 –0.5 30 Ciss 10 Coss 3 Crss 1 –25 ˚C –1 –3 –10 –30 0.5 –0.3 –60 ID - Drain Current - mA –40 –200 VDD = – 5 V VGS = – 5 V Rin = 10 Ω 200 tr 100 50 tf td(on) 20 ISD - Diode Forward Current - mA 500 td(on), tr, td(off), tf - Switching Time - ns –1 –3 –10 VDS - Gate to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE SWITCHING CHARACTERISTICS –100 VGS = 0 Pulsed –30 –10 –3 –1 –0.3 td(off) 10 –6 4 VDS = –5 V f = 1 MHz –10 –30 –50 –100 ID - Drain Current - mA –300 –0.1 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0 –1.1 –1.2 –1.3 VSD - Source to Drain Voltage - V 2SJ243 REFERENCE Document Name Document No. NEC semiconductor device reliability/quality control system TEI-1202 Quality grade on NEC semiconductor devices IEI-1209 Semiconductor device mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor selection guide X10679E 5 2SJ243 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: “Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on a customer designated “quality assurance program“ for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 2