NEC 2SJ357

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ357
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
The 2SJ357 is a P-channel vertical MOS FET that can be
Package Drawings (unit: mm)
used as a switching element. The 2SJ357 can be directly
driven by an IC operating at 5 V.
5.7 ±0.1
1.5 ±0.1
1
1.0
• New-type compact package
0.5 ±0.1
Has advantages of packages for small signals and for
power transistors, and compensates those disadvantages
• Can be directly driven by an IC operating at 5 V.
2
0.5 ±0.1
2.1
0.4 ±0.05
0.85 ±0.1
4.2
Equivalent Circuit
Drain (D)
• Low on-resistance
RDS(ON) = 0.35 Ω MAX. @VGS = –4 V, ID = –1.5 A
RDS(ON) = 0.20 Ω MAX. @VGS = –10 V, ID = –1.5 A
Electrode Connection
1. Source
Internal 2. Drain
Diode
3. Gate
Gate (G)
Gate Protect
Diode
QUALITY GRADE
3
5.4 ±0.25
FEATURES
0.55
such as actuator driver and DC/DC converter.
3.65 ±0.1
2.0 ±0.2
The 2SJ357 features a low on-resistance and excellent
switching characteristics, and is suitable for applications
Standard
Source (S)
Marking: UA1
Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by
NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)
Parameter
Symbol
Conditions
Ratings
Unit
Drain-Source Voltage
VDSS
VGS = 0
–30
V
Gate-Source Voltage
VGSS
VDS = 0
–20/+10
V
Drain Current (DC)
ID(DC)
–/+3.0
A
Drain Current (Pulse)
ID(pulse)
–/+6.0
A
2.0
W
PW ≤ 10 ms
Duty Cycle ≤ 1 %
Mounted on ceramic board of 7.5 cm2 × 0.7 mm
Total Power Loss
PT
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this
device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage
may be applied to this device.
The information in this document is subject to change without notice.
Document No. D10803EJ3V0DS00 (3rd edition)
(Previous No. TC-2490)
Date Published January 1999 N CP(K)
Printed in Japan
©
1994
2SJ357
ELECTRICAL SPECIFICATIONS (TA = +25 °C)
MAX.
Unit
Drain Shut-down Current
Parameter
Symbol
IDSS
VDS = –30 V, VGS = 0
Conditions
MIN.
TYP.
–10
µA
Gate Leak Current
IGSS
VGS = –16/+10 V, VDS = 0
–/+10
µA
Gate Cutoff Voltage
VGS(off)
VDS = –10 V, ID = –1 mA
–1.0
Forward Transfer Admittance
|yfs|
VDS = –10 V, ID = –1.0 A
1.8
–1.5
–2.0
Drain-Source On-Resistance
RDS(on)1
VGS = –4 V, ID = –1.5 A
0.23
0.35
Drain-Source On-Resistance
RDS(on)2
0.20
V
S
Ω
Ω
VGS = –10 V, ID = –1.5 A
0.12
Input Capacitance
Ciss
VDS = –10 V, VGS = 0,
645
pF
Output Capacitance
Coss
f = 1.0 MHz
500
pF
Feedback Capacitance
Crss
On-Time Delay
td(on)
Rise Time
tr
Off-Time Delay
pF
8
ns
VGS(on) = –10 V
42
ns
145
ns
170
ns
RG = 10 Ω, RL = 17 Ω
td(off)
Fall Time
275
VDD = –25 V, ID = –1.5 A
tf
Gate Input Charge
QG
VDS = –24 V,
25.1
nC
Gate-Source Chanrge
QGS
VGS = –10 V,
2.0
nC
Gate-Drain Charge
QGD
9.8
nC
112
ns
106
nC
Internal Diode Reverse
Recovery Time
trr
Internal Diode Reverse
Recovery Charge
Qrr
ID = –3.1 A, IG = –2 mA
IF = 3.0 A
di/dt = 50 A/µs
CHARACTERISTICS CURVES (TA = +25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
FORWARD BIAS SAFE OPERATING AREA
–10
1
10
–5
ID – Drain Current – A
dT – Derating Factor – %
100
80
60
40
PW
–2
m
s
m
s
=
10
0
–1
m
s
–0.5
DS
–0.2
20
–0.1
0
25
50
75
100
125
150
–0.05 Single Pulse
–0.5 –1
–2
TA – Ambient Temperature – °C
2
–5 –10
–20
–50 –100
VDS – Drain to Source Voltage – V
Data Sheet D10803EJ3V0DS00
2SJ357
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
TRANSFER CHARACTERISTICS
–10
–10 VDS = –10 V
Pulsed
–1
–1
0V
–8
–6
.5
V
–4
–4.0
ID – Drain Current –A
ID – Drain Current – A
Pulsed
V
–3.5 V
–4
–3.0 V
–2
–2.5 V
TA = 150 °C
–0.1
TA = –25 °C
–0.01
TA = 0 °C
–0.001
TA = 25 °C
–0.0001
VGS = –2.0 V
0
–2
–1
–3
TA = 75 °C
–4
–5
–0.00001
–1
VDS – Drain to Source Voltage – V
0.01
0.001
–0.0001
TA = 0 °C
TA = 25 °C
TA = 75 °C
TA = 150 °C
–0.001
–0.01
–0.1
–1
RDS(on) – Drain to Source On-State Resistance – Ω
ID – Drain Current – A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
0.3
VGS = –10 V
Pulsed
TA = 150 °C TA = 75 °C
0.2
0.1
TA = 25 °C
0
–0.001
–0.01
TA = 0 °C
TA = –25 °C
–0.1
–1
–10
RDS(on) – Drain to Source On-State Resistance – Ω
0.1
TA = –25 °C
RDS(on) – Drain to Source On-State Resistance – Ω
|yfs| – Forward Transfer Admittence – S
VDS = –10 V
Pulsed
1
–3
–4
VGS – Gate to Source Voltage – V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
–2
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRINT
0.5
VGS = –4 V
Pulsed
TA = 150 °C TA = 75 °C
0.4
0.3
0.2
0.1
TA = 25 °C
0
–0.001
TA = 0 °C
TA = –25 °C
–0.01
–0.1
–1
ID – Drain Current – A
–10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
0.6
Pulsed
0.4
ID = 3.0 A
0.2
ID = 1.5 A
0
ID – Drain Current – A
Data Sheet D10803EJ3V0DS00
–2 –4 –6 –8 –10 –12 –14 –16 –18 –20
VGS – Gate to Source Voltage – V
3
2SJ357
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
10000
VGS = 0
Pulsed
Ciss, Coss, Crss – Capacitance – pF
ISD – Diode Forward Current – A
–10
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
–1
–0.1
–0.01
–0.001
–0.0001
–0.2
VGS = 0
f = 1 MHz
Ciss
1000
100
Crss
10
–0.4
–0.6
–0.8
–1.0
–1
–1.2
VSD – Source to Drain Voltage – V
trr – Reverse Recovery Time – ns
td(on), tr, td(off), tr – Switching Time – ns
1000
tf
td(off)
tr
td(on)
10
1
0.1
VGS = 0
di/dt = 50 A/µ s
100
10
–0.05 –0.1
10
rth(j–a) – Transient Thermal Resistance – °C/Ω
ID – Drain Current – A
–0.5
–1
–5
ID – Diode Forward Current – A
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Single Pulse
Using ceramic board
of 7.5 cm2 × 0.7 mm
100
10
1
0.1
1m
10 m
100 m
PW – Pulse Width – s
4
–100
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
VDD = –25 V
VGS(ON) = –10 V
100
–10
VDS – Drain to Source Voltage – V
SWITCHING CHARACTERISTICS
1000
Coss
Data Sheet D10803EJ3V0DS00
1
10
100
–10
2SJ357
[MEMO]
Data Sheet D10803EJ3V0DS00
5
2SJ357
[MEMO]
6
Data Sheet D10803EJ3V0DS00
2SJ357
[MEMO]
Data Sheet D10803EJ3V0DS00
7
2SJ357
[MEMO]
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consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96.5