DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1913 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING PACKAGE DRAWING (Unit : mm) DESCRIPTION FEATURES 0.16+0.1 –0.06 +0.1 0.65–0.15 0.32 +0.1 –0.05 6 5 4 1 2 3 1.5 2.8 ±0.2 The µPA1913 is a switching device which can be driven directly by a 2.5-V power source. The µPA1913 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. • Can be driven by a 2.5-V power source • Low on-state resistance RDS(on)1 = 55 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A) RDS(on)2 = 58 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A) RDS(on)3 = 82 mΩ MAX. (VGS = –2.7 V, ID = –2.5A) RDS(on)4 = 90 mΩ MAX. (VGS = –2.5 V, ID = –2.5A) 0 to 0.1 0.95 0.65 0.95 1.9 0.9 to 1.1 2.9 ±0.2 1, 2, 5, 6 : Drain 3 : Gate 4 : Source ORDERING INFORMATION PART NUMBER PACKAGE µPA1913TE 6-pin Mini Mold (Thin Type) EQUIVALENT CIRCUIT Drain ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage VDSS –20 V Gate to Source Voltage VGSS ±12 V Drain Current (DC) ID(DC) ±4.5 A ID(pulse) ±18 A PT1 0.2 W PT2 2 W Drain Current (pulse) Note1 Total Power Dissipation Total Power Dissipation Note2 Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Body Diode Gate Gate Protection Diode Source Marking: TE Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 % 2. Mounted on FR4 board, t ≤ 5 sec. Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13807EJ2V0DS00 (2nd edition) Date Published March 2000 NS CP(K) Printed in Japan The mark • shows major revised points. © 1998, 1999 µ PA1913 ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = –20 V, VGS = 0 V –10 µA Gate Leakage Current IGSS VGS = ±12 V, VDS = 0 V ±10 µA VGS(off) VDS = –10 V, ID = –1 mA –0.5 –1.1 –1.5 V | yfs | VDS = –10 V, ID = –2.5 A 3 8.8 RDS(on)1 VGS = –4.5 V, ID = –2.5 A 44 55 mΩ RDS(on)2 VGS = –4.0 V, ID = –2.5 A 46 58 mΩ RDS(on)3 VGS = –2.7 V, ID = –2.5 A 60 82 mΩ RDS(on)4 VGS = –2.5 V, ID = –2.5 A 66 90 mΩ Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = –10 V 700 pF Output Capacitance Coss VGS = 0 V 208 pF Reverse Transfer Capacitance Crss f = 1 MHz 100 pF Turn-on Delay Time td(on) VDD = –10 V 300 ns tr ID = –2.5 A 528 ns VGS(on) = –4.0 V 242 ns tf RG = 10 Ω 698 ns Total Gate Charge QG VDD= –16 V 6.0 nC Gate to Source Charge QGS ID = –4.5 A 2.1 nC Gate to Drain Charge QGD VGS = –4.0 V 2.8 nC Rise Time Turn-off Delay Time td(off) Fall Time Diode Forward Voltage VF(S-D) IF = 4.5 A, VGS = 0 V 0.86 V • Reverse Recovery Time trr IF = 4.5 A, VGS = 0 V 32 ns • Reverse Recovery Charge Qrr di/dt = 10 A / µs 2.2 nC TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. RL RG PG. VGS (−) VGS Wave Form 0 10 % PG. 90 % 90 % ID VGS (−) 0 ID 10 % 0 10 % Wave Form τ τ = 1 µs Duty Cycle ≤ 1 % tr td(off) td(on) ton RL 50 Ω VDD 90 % VDD ID (−) 2 VGS(on) IG = −2 mA tf toff Data Sheet D13807EJ2V0DS00 µ PA1913 TYPICAL CHARACTERISTICS (TA = 25°C) FORWARD BIAS SAFE OPERATING AREA DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA −100 80 ID - Drain Current - A dT - Derating Factor - % 100 60 40 20 0 30 60 90 120 TA - Ambient Temperature - ˚C −10 − PW PW −1 −0.1 PW PW ID (DC) V (@ =1 0 =1 ms ms =1 00 ms =5 s Single Pulse Mounted on 250 mm2x 35 µm Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board −0.01 −0.1 150 ID (pulse) d ite V) im 4.5 )L on = S( RD GS −1 −10 −100 VDS - Drain to Source Voltage - V • DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE ID - Drain Current - A VGS = −10 V −4.5 V −4.0 V −16 −12 −2.5 V −8 −4 VDS = −10 V −10 ID - Drain Current - A −20 TRANSFER CHARACTERISTICS −100 −1 −0.1 TA = 125˚C 75˚C 25˚C −25˚C −0.01 −0.001 −0.0001 0 0.0 −0.2 −0.6 −0.4 −0.8 −1.0 −0.00001 0 −0.5 VDS - Drain to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE −1.5 VDS = −10 V ID = −1 mA 100 −1.0 −0.5 −50 0 50 100 −1.5 −2.0 −2.5 −3.0 FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(off) - Gate to Source Cut-off Voltage - V • −1.0 VGS - Gate to Sorce Voltage - V 150 VDS = −10V 10 TA = −25˚C 25˚C 75˚C 125˚C 1 0.1 0.01 −0.01 Tch - Channel Temperature - ˚C −0.1 −1 −10 −100 ID - Drain Current - A Data Sheet D13807EJ2V0DS00 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = −2.5 V TA = 125˚C 80 75˚C 25˚C 60 −25˚C 40 −0.01 −1 −0.1 −10 −100 RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ µ PA1913 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 100 VGS = −2.7 V TA = 125˚C 80 75˚C 25˚C 60 −25˚C 40 −0.01 TA = 125˚C 75˚C 50 25˚C −25˚C 40 30 −0.01 −0.1 −1 −10 −100 RDS(on) - Drain to Source On-State Resistance - mΩ RDS(on) - Drain to Source On-State Resistance - mΩ VGS = −4.0 V 60 70 VGS = −4.5 V 60 TA = 125˚C 75˚C 50 25˚C 40 −25˚C 30 −0.01 −4.0 V 60 −4.5 V 40 0 Tch 4 −2.7 V 80 50 100 - Channel Temperature -˚C RDS (on) - Drain to Source On-state Resistance - mΩ RDS (on) - Drain to Source On-state Resistance - mΩ ID = −2.5 A VGS = −2.5 V −1 −0.1 −10 −100 ID - Drain Current - A DRAIN TO SOURCE ON STATE RESISTANCE vs. CHANNEL TEMPERATURE 20 −50 −100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT ID - Drain Current - A 100 −10 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 70 −1 −0.1 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 120 ID = −2.5 A 100 80 60 40 20 0 150 Data Sheet D13807EJ2V0DS00 −2 −4 −6 −8 −10 VGS - Gate to Source Voltage - V −12 µ PA1913 SWITCHING CHARACTERISTICS CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE f = 1 MHz VGS = 0V td(on), tr, td(off), tf - Switchig Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 10000 1000 Ciss Coss Crss 100 10 −0.1 −1 −10 1000 tf tr td(on) td(off) 100 VDD = −10 V VGS(on) = −4.0 V RG = 10 Ω 10 −0.1 −100 −1 ID - Drain Current - A VDS - Drain to Source Voltage - V SOURCE TO DRAIN DIODE FORWARD VOLTAGE DYNAMIC INPUT CHARACTERISTICS −8 VGS - Gate to Source Voltage - V IF - Source to Drain Current - A 100 10 1 0.1 0.6 0.8 1.0 1.2 ID = −4.5 A −6 VDD = −16 V −10 V −4 −2 0 0.01 0.4 −10 0 1 2 3 4 5 6 7 8 9 10 QG - Gate Charge - nC VF(S-D) - Source to Drain Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(ch-A) - Transient Thermal Resistance - ˚C/W 1000 Without Board 100 Mounted on 250 mm2 x 35 µm Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board Single Pulse 10 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - S Data Sheet D13807EJ2V0DS00 5 µ PA1913 [MEMO] 6 Data Sheet D13807EJ2V0DS00 µ PA1913 [MEMO] Data Sheet D13807EJ2V0DS00 7 µ PA1913 • The information in this document is subject to change without notice. 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