DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3510 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3510 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3510 TO-220AB 2SK3510-S TO-262 2SK3510-ZJ TO-263 2SK3510-Z TO-220SMDNote designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on) = 8.5 mΩ MAX. (VGS = 10 V, ID = 42 A) Note TO-220SMD package is produced only • Low Ciss: Ciss = 8500 pF TYP. in Japan. • Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 75 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V ID(DC) ±83 A ID(pulse) ±332 A Total Power Dissipation (TC = 25°C) PT1 125 W Total Power Dissipation (TA = 25°C) PT2 1.5 W Channel Temperature Tch 150 °C Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 69 A Single Avalanche Energy Note2 EAS 450 mJ Storage Temperature (TO-262) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15687EJ1V0DS00 (1st edition) Date Published May 2002 NS CP(K) Printed in Japan © 2001 2SK3510 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 75 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 2.0 3.0 4.0 V | yfs | VDS = 10 V, ID = 42 A 30 60 RDS(on) VGS = 10 V, ID = 42 A Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance S 6.5 8.5 mΩ Input Capacitance Ciss VDS = 10 V 8500 pF Output Capacitance Coss VGS = 0 V 1300 pF Reverse Transfer Capacitance Crss f = 1 MHz 650 pF Turn-on Delay Time td(on) VDD = 38 V, ID = 42 A 35 ns VGS = 10 V 28 ns RG = 0 Ω 105 ns 16 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 60 V 150 nC Gate to Source Charge QGS VGS = 10 V 30 nC Gate to Drain Charge QGD ID = 83 A 52 nC VF(S-D) IF = 83 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 83 A, VGS = 0 V 80 ns Reverse Recovery Charge Qrr di/dt = 100 A/ µs 240 nC Body Diode Forward Voltage TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME D.U.T. L 50 Ω VGS RL Wave Form RG PG. VDD VGS 0 VGS 10% 90% VDD VDS 90% IAS VDS VDS ID Starting Tch τ τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE PG. 2 50 Ω 10% 0 10% Wave Form VDD D.U.T. IG = 2 mA 90% VDS VGS 0 BVDSS RL VDD Data Sheet D15687EJ1V0DS td(on) tr ton td(off) tf toff 2SK3510 TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 125 100 75 50 25 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 100 d ite ) Lim 10 V = S R t VG (a ID(pulse) PW =1 0µ s 10 0µ s ID(DC) DC 1m s 10 Po m s Lim we ite r Di d ss ipa tio n 10 1 TC = 25˚C Single Pulse 0.1 0.1 1 10 VDS - Drain to Source Voltage - V 100 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A o ( DS n) 100 10 Channel to Ambient Rth(ch-A) = 83.3˚C/W 1 Channel to Case Rth(ch-C) = 1.0˚C/W 0.1 Single Pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15687EJ1V0DS 3 2SK3510 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 0 400 V D S = 10 V P ulsed P ulsed 300 ID - Drain Current - A ID - Drain Current - A 350 250 200 V G S = 10 V 150 100 100 10 T A = 150°C 75°C 25°C −55°C 1 50 0.1 0 0 1 2 3 1 4 2 VDS - Drain to Source Voltage - V 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 50 100 150 200 | yfs | - Forward Transfer Admittance - S VGS(off) – Gate Cut-off Voltage - V V DS = 10 V ID = 1 mA -50 VDS = 10 V P u ls e d 10 T A = 1 50 °C 7 5 °C 2 5 °C −5 5 °C 1 0 .1 0 .0 1 0 .0 1 0 .1 16 14 12 10 V G S = 10 V 6 4 2 0 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ P ulse d 10 10 100 10 ID - Drain Current - A 4 1 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 20 1 7 ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 8 6 100 Tch - Channel Temperature - °C 18 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 4.0 -100 4 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 3.5 3 P ulse d 8 I D = 42 A 6 4 2 0 0 2 4 6 8 10 12 14 16 VGS - Gate to Source Voltage - V Data Sheet D15687EJ1V0DS 18 20 2SK3510 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 1 4 .0 100000 V GS = 0 V f = 1 MHz P u ls e d 1 2 .0 Ciss, Coss, Crss - Capacitance - pF 1 0 .0 8 .0 6 .0 4 .0 VGS = 10 V ID = 4 2 A 2 .0 C is s 10000 C oss C rs s 1000 0 .0 100 -1 0 0 -5 0 0 50 100 150 200 0 .1 10 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 80 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1 Tch - Channel Temperature - °C td(off) 100 td(on) tr tf 10 VDD = 38 V VGS = 10 V RG = 0 Ω 1 0.1 1 10 16 ID = 8 3 A 70 V DD = 60 V 60 V DD = 38 V 12 50 V DD = 15 V 10 14 40 8 6 30 V GS 20 4 10 2 V DS 0 0 100 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 0 50 ID - Drain Current - A 100 150 200 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 100 trr - Reverse Recovery Time - ns ISD - Diode Forward Current - A P u ls e d 100 VGS = 0 V 10 VGS = 10 V 1 0 .1 0 .0 1 VGS = 0 V d i/ d t = 1 0 0 A / µ s 10 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 1 .4 1 .6 1 .8 2 VSD - Source to Drain Voltage - V 0 .1 1 10 100 IF - Drain Current - A Data Sheet D15687EJ1V0DS 5 2SK3510 SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD SINGLE AVALANCHE ENERGY DERATING FACTOR 160 VDD = 35 V R G = 25 Ω VGS = 20 → 0 V 100 10 1 0 .0 0 1 Energy Derating Factor - % IAS - Single Avalanche Current - A 1000 IA S = 6 9 A E 0 .0 1 AS = 450 m J 0 .1 1 10 120 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - °C L - Inductive Load - mH 6 VDD = 35 V RG = 25 Ω VGS = 20 → 0 V IAS ≤ 69 A 140 Data Sheet D15687EJ1V0DS 2SK3510 PACKAGE DRAWINGS (Unit: mm) 1) TO-220AB (MP-25) φ 3.6±0.2 1.0±0.5 4.8 MAX. 10.6 MAX. 3.0±0.3 2) TO-262 (MP-25 Fin Cut) 10 TYP. 1.3±0.2 3 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 1.3±0.2 12.7 MIN. 6.0 MAX. 1 2 3 1.3±0.2 8.5±0.2 4 1 1.3±0.2 12.7 MIN. 4 15.5 MAX. 5.9 MIN. 10.0 TYP. 4.8 MAX. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note 3) TO-263 (MP-25ZJ) 4) TO-220SMD (MP-25Z) 4.8 MAX. 10 TYP. 4.8 MAX. 10 TYP. 1.3±0.2 1.3±0.2 4 2.8±0.2 2.54 TYP. TY . YP R 0.8 T 1.4±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 8.5±0.2 3 3.0±0.5 0.7±0.2 2.54 TYP. P. R 0.5 2 P. TY P. R 5 TY 0. R 0.8 2.54 TYP. 2.8±0.2 1.4±0.2 1 1.1±0.4 8.5±0.2 3 5.7±0.4 2 1.0±0.5 4 1.0±0.5 1 2.8±0.2 2.54 TYP. 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This package is produced only in Japan. EQUIVALENT CIRCUIT Drain Remark Body Diode Gate The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source Data Sheet D15687EJ1V0DS 7 2SK3510 • The information in this document is current as of May, 2002. The information is subject to change without notice. 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