DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3062 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ★ ORDERING INFORMATION DESCRIPTION The 2SK3062 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3062 TO-220AB FEATURES 2SK3062-S TO-262 • Low on-state resistance 2SK3062-ZJ TO-263 2SK3062-Z TO-220SMD designed for high current switching applications. RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 35 A) RDS(on)2 = 12 mΩ MAX. (VGS = 4.0 V, ID = 35 A) Notes TO-220SMD package is produced only in • Low Ciss: Ciss = 5200 pF TYP. • Built-in gate protection diode Japan ABSOLUTE MAXIMUM RATINGS (T A = 25 °C) (TO-220AB) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS(AC) ±20 V Gate to Source Voltage (VDS = 0 V) VGSS(DC) +20, −10 V ID(DC) ±70 A ID(pulse) ±280 A Total Power Dissipation (TC = 25°C) PT 100 W Total Power Dissipation (TA = 25°C) PT 1.5 W Channel Temperature Tch 150 °C Drain Current (DC) (TC = 25°C) Drain Current (Pulse) Note1 Tstg –55 to +150 °C Single Avalanche Current Note2 IAS 35 A Single Avalanche Energy Note2 EAS 122.5 mJ Storage Temperature (TO-262) Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V (TO-263, TO-220SMD) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D13101EJ2V0DS00 (2nd edition) Date Published April 2001 NS CP(K) Printed in Japan The mark ★ shows major revised points. © 1998,1999 2SK3062 ELECTRICAL CHARACTERISTICS (T A = 25 °C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 1.0 1.5 2.0 V | yfs | VDS = 10 V, ID = 35 A 20 87 RDS(on)1 VGS = 10 V, ID = 35 A 6.3 8.5 mΩ RDS(on)2 VGS = 4.0 V, ID = 35 A 8.2 12 mΩ Forward Transfer Admittance Drain to Source On-state Resistance S Input Capacitance Ciss VDS = 10 V 5200 pF Output Capacitance Coss VGS = 0 V 1300 pF Reverse Transfer Capacitance Crss f = 1 MHz 480 pF Turn-on Delay Time td(on) VDD = 30 V ,ID = 35 A 75 ns VGS(on) = 10 V 1150 ns RG = 10 Ω 360 ns 480 ns Rise Time tr Turn-off Delay Time td(off) Fall Time tf Total Gate Charge QG VDD = 48 V 95 nC Gate to Source Charge QGS VGS(on) = 10 V 13 nC Gate to Drain Charge QGD ID = 70 A 30 nC Body Diode Forward Voltage VF(S-D) IF = 70 A, VGS = 0 V 0.97 V Reverse Recovery Time trr IF = 70 A, VGS = 0 V 70 ns Reverse Recovery Charge Qrr di/dt = 100 A / µ s 140 nC TEST CIRCUIT 1 AVALANCHE CAPABILITY TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS(on) 10% Data Sheet D13101EJ2V0DS tr td(off) td(on) ton tf toff 2SK3062 TYPICAL CHARACTERISTICS (T A = 25 °C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 0 25 50 75 120 100 80 60 40 20 0 100 125 150 175 200 25 TC - Case Temperature - °C ★ 50 75 100 125 150 175 200 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 ID - Drain Current - A ID(pulse) 100 d ite ) Lim 10 V n) (o = S S RD t VG (a 1m s ID(DC) PW 10 0µ s =1 0µ s 10 ms 10 0m s DC Po Lim wer ite Dis d sip ati on 10 1 0.1 0.1 TC = 25˚C Single Pulse 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1000 100 Rth(ch-A)= 83.3 ˚C/W 10 Rth(ch-C)= 1.25 ˚C/W 1 0.1 0.01 0.001 10 µ TC = 25˚C Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D13101EJ2V0DS 3 2SK3062 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 10 ID - Drain Current - A ID - Drain Current - A Pulsed TA = 125˚C 75˚C 25˚C −25˚C 1 VGS = 10 V 200 VGS = 4.0 V 100 0.1 0 1 2 Pulsed VDS = 10 V 4 5 3 0 10 1 0.1 1.0 VDS = 10 V Pulsed 100 10 RDS(on) - Drain to Source On-state Resistance - mΩ ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - mΩ Tch = −25˚C 25˚C 75˚C 125˚C 20 10 ID = 35 A 0 20 VGS = 4.0 V 10 10 V 0 0.1 1 10 100 10 15 1000 VDS = 10 V ID = 1 mA 2.0 1.5 1.0 0.5 0 ID - Drain Current - A 4 5 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE Pulsed 30 4 3 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cut-off Voltage - V | yfs | - Forward Transfer Admittance - S FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 2 1 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V −50 0 50 100 150 Tch - Channel Temperature - ˚C Data Sheet D13101EJ2V0DS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE VGS = 4.0 V 15 10 V 10 5 Ciss, Coss, Crss - Capacitance - nF 0V 10 1 0.1 ID = 35 A −50 0 50 100 Pulsed 0 150 0.5 VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS VGS = 0 V f = 1 MHz 10 Ciss 1 Coss Crss 1 10 VDS = 30 V VGS = 10 V RG = 10 Ω 10000 100 tr 1000 tf td(off) td(on) 100 10 1 0.1 VDS - Drain to Source Voltage - V di/dt = 100 A /µ s VGS = 0 V 100 10 1 10 100 VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 1000 10 100 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1 0.1 1.5 1 Tch - Channel Temperature - ˚C 100 0.1 0.1 VGS = 4.0 V DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 16 ID = 70 A 14 60 12 VDD = 12 V 30 V 48 V 40 10 8 6 4 20 2 0 25 50 75 100 VGS - Gate to Source Voltage - V 0 100 ISD - Diode Forward Current - A 20 SOURCE TO DRAIN DIODE FORWARD VOLTAGE td(on), tr, td(off), tf - Switching Time - ns RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3062 0 QG - Gate Charge - nC IF - Drain Current - A Data Sheet D13101EJ2V0DS 5 2SK3062 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 160 IAS = 35 A EAS 10 =1 22. 5m 120 100 80 60 40 20 1m L - Inductive Load - H 6 J 1.0 RG = 25 Ω VDD = 30 V VGS = 20 V → 0 V Starting Tch = 25 °C 0.1 100 µ 10 µ VDD = 30 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 35 A 140 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 10 m 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D13101EJ2V0DS 2SK3062 PACKAGE DRAWINGS (Unit : mm) 4.8 MAX. 10.6 MAX. φ 3.6±0.2 (10) 1.3±0.2 10.0 4.8 MAX. 1.3±0.2 4 1 1 2 3 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3)TO-263 (MP-25ZJ) 4) TO-220SMD(MP-25Z) 4.8 MAX. (10) 4.8 MAX. 1.3±0.2 4 2.8±0.2 3 2.54 TYP. ( 0.5±0.2 1.0±0.3 2.54 TYP. 1 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3.0±0.5 1.4±0.2 ) R 0.8 8.5±0.2 1.0±0.5 ) .5R (0 1.1±0.4 0.7±0.2 2 ) .5R R) .8 0 ( (0 0.5±0.2 3 2.54 TYP. 2.8±0.2 5.7±0.4 8.5±0.2 1.0±0.5 4 1.4±0.2 2 Note (10) 1.3±0.2 2.54 TYP. 1 2.8±0.2 0.5±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 8.5±0.2 15.5 MAX. 5.9 MIN. 4 12.7 MIN. 3.0±0.3 2)TO-262 (MP-25 Fin Cut) 1.0±0.5 1)TO-220AB (MP-25) 1.Gate 2.Drain 3.Source 4.Fin (Drain) Note This Package is produced only in Japan. EQUIVALENT CIRCUIT Drain Remark Body Diode Gate The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Gate Protection Diode Source Data Sheet D13101EJ2V0DS 7 2SK3062 • The information in this document is current as of April, 2001. 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