NEC 2SK3664

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3664
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The 2SK3664 is a switching device, which can be driven directly
by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.3 A)
RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.3 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
0.8 ± 0.1
1.6 ± 0.1
0.3 +0.1
–0
PACKAGE
2SK3664
SC-75 (USM)
3
0 to 0.1
2
1
0.2
0.5
+0.1
–0
0.6
0.5
0.75 ± 0.05
1.0
1.6 ± 0.1
ORDERING INFORMATION
PART NUMBER
0.15 +0.1
–0.05
1: Source
2: Gate
3: Drain
Marking: G1
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC)
ID(DC)
±0.5
A
ID(pulse)
±2.0
A
Drain Current (pulse) Note1
Total Power Dissipation Note2
PT
0.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2. Mounted on ceramic substrate of 300 mm x 0.64 mm
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and shoud be handled with
caution for electrostatic discharge.
VESD = ±200 V TYP. (C = 200 pF, R = 0 Ω, Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16599EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2003
2SK3664
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
1.0
µA
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
±10
µA
VGS(off)
VDS = 10 V, ID = 1.0 mA
0.5
1.0
1.5
V
| yfs |
VDS = 10 V, ID = 0.3 A
0.25
0.75
RDS(on)1
VGS = 4.5 V, ID = 0.3 A
0.38
0.57
Ω
RDS(on)2
VGS = 4.0 V, ID = 0.3 A
0.41
0.60
Ω
RDS(on)3
VGS = 2.5 V, ID = 0.15 A
0.60
0.88
Ω
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
S
Input Capacitance
Ciss
VDS = 10 V
28
pF
Output Capacitance
Coss
VGS = 0 V
11
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
7.0
pF
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 0.30 A
20
ns
tr
VGS = 4.0 V
51
ns
td(off)
RG = 10 Ω
94
ns
87
ns
0.87
V
Rise Time
Turn-off Delay Time
Fall Time
tf
Body Diode Forward Voltage
Note
VF(S-D)
IF = 0.5 A, VGS = 0 V
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
VDD
0
VGS
10%
90%
VDS
90%
VGS
0
VDS
τ
τ = 1 µs
Duty Cycle ≤ 1%
2
90%
VDS
10%
0
10%
Wave Form
td(on)
tr
ton
td(off)
tf
toff
Data Sheet D16599EJ2V0DS
2SK3664
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
2
Mounted on ceramic substrate
of 3.0 cm2 x 0.64 mm
Pulsed
200
ID - Drain Current - A
PT - Total Power Dissipation - mW
240
160
120
80
1.6
4.0 V
VGS = 4.5 V
2.5 V
1.2
0.8
0.4
40
0
0
30
60
90
120
150
180
210
0
0.4
0.8
1.2
TA - Ambient Temperature - °C
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
10
1.4
VDS = 10 V
ID = 1.0 mA
1
0.1
VGS(off) - Gate Cut-off Voltage - V
ID - Drain Current - A
VDS = 10 V
Pulsed
TA = 125°C
75°C
25°C
−25°C
0.01
0.001
0.0001
0
0.5
1
1.5
2
2.5
1.2
1
0.8
0.6
0.4
-50
3
VGS - Gate to Source Voltage - V
TA = −25°C
25°C
75°C
125°C
0.1
0.01
0.001
0.01
0.1
1
10
RDS(on) - Drain to Source On-state Resistance - Ω
| yfs | - Forward Transfer Admittance - S
VDS = 10 V
Pulsed
1
0
50
100
150
Tch - Channel Temperature - °C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1.6
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
1
VGS = 4.5 V
Pulsed
0.8
0.6
TA = 125°C
75°C
0.4
0.2
0
0.01
25°C
−25°C
0.1
1
10
ID - Drain Current - A
Data Sheet D16599EJ2V0DS
3
2SK3664
1.2
VGS = 4.0 V
Pulsed
1
TA = 125°C
75°C
0.8
0.6
0.4
25°C
−25°C
0.2
0
0.01
0.1
1
10
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1.2
Pulsed
1
0.8
0.6
ID = 0.3 A
0.4
0.2
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
1
VGS = 2.5 V
Pulsed
TA = 125°C
75°C
0.8
0.6
25°C
−25°C
0.4
0.2
0
0.01
Pulsed
1
VGS = 2.5 V, ID = 0.15 A
0.8
0.6
0.4
VGS = 4.0 V, ID = 0.3 A
VGS = 4.5 V, ID = 0.3 A
0.2
0
-50
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
Coss
Crss
1
1
10
100
VDS - Drain to Source Voltage - V
4
0
50
100
150
Tch - Channel Temperature - °C
1000
Ciss
0.1
10
SWITCHING CHARACTERISTICS
VGS = 0 V
f = 1.0 MHz
10
1
1.2
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
100
0.1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - Ω
RDS(on) - Drain to Source On-state Resistance - Ω
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1.2
VDD = 10 V
VGS = 4.0 V
RG = 10 Ω
td(off)
100
tf
tr
td(on)
10
0.01
0.1
1
ID - Drain Current - A
Data Sheet D16599EJ2V0DS
10
2SK3664
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
10
IF - Diode Forward Current - A
Pulsed
1
VGS = 0 V
0.1
0.01
0.001
0.4
0.6
0.8
1
1.2
1.4
VF(S-D) - Source to Drain Voltage - V
Data Sheet D16599EJ2V0DS
5
2SK3664
• The information in this document is current as of November, 2004. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
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M8E 02. 11-1