S T M8405 S amHop Microelectronics C orp. Nov.23, 2004 ver 1.4 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -30V -5A R DS (ON) ( m W ) 25 @ V G S = 10V Max 45 @ V G S = -10V 40 @ V G S = 4.5V 60 @ V G S = -4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter N-C hannel P-C hannel Unit Drain-S ource Voltage V DS 30 -30 V Gate-S ource Voltage V GS 22 22 V 7 -5 6 -4.5 A A IDM 29 -20 A IS 1.7 -1.7 A 25 C a Drain C urrent-C ontinuous @ Ta -P ulsed ID 70 C b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Ta= 25 C PD Ta=70 C Operating Junction and S torage Temperature R ange T J , T S TG 2 1.44 W -55 to 150 C 62.5 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 S T M8405 N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 22V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 30 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 1.5 2 V V GS =10V, ID = 6.6A 20 25 m ohm V GS =4.5V, ID= 5A 35 40 m ohm V DS = 5V, V GS = 4.5V V DS = 5V, ID = 6.6A 1 20 A 10 S DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z 765 865 PF 145 160 PF 96 113 PF 3 ohm c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 7.4 8.5 ns 27.7 32 ns 12.2 14 ns 7.6 9 ns V DS =15V, ID =6.6A,V GS =10V 14.1 16 nC V DS =15V, ID =6.6A,V GS =4.5V 6.2 2.2 7 nC 2.6 4.1 4.8 nC nC V DD = 15V ID = 6.6 A V GS = 10V R GE N = 3 ohm V DS =15V, ID = 6.6 A V GS =10V 2 S T M8405 P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS= 0V -1 Gate-Body Leakage IGS S V GS = 22V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS -30 V uA ON CHAR ACTE R IS TICS b Forward Transconductance -1.5 -2.5 V V GS =-10V, ID = -5A 35 45 m ohm V GS =-4.5V, ID= -4A 50 60 m ohm V DS = -5V, V GS = -10V V DS = -5V, ID= -5A -1 20 A 9 S DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =-15V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z 721 820 PF 154 180 PF 92 108 PF 3.3 ohm c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 4.7 5.5 ns 7.8 9 ns 47.2 56 ns 22.6 26 ns V DS =-15V, ID =-5A,V GS =-10V 13.8 16 nC V DS =-15V, ID =-5A,V GS =-4.5V 7.3 8.6 nC 1.5 2 4.3 5 nC nC V DD = -15V R L = 2.7 ohm V GS = -10V R GE N = 3 ohm V DS =-15V, ID = -5 A V GS =-10V 3 S T M8405 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A VSD N-Ch P-Ch 1.2 -1.2 0.8 -0.78 Notes a.Surface Mounted on FR4 Board, t＜10sec. b.Pulse Test:Pulse Width＜300μs, Duty Cycle ＜ 2%. c.Guaranteed by design, not subject to production testing. N-Channel 25 20 25 C VGS=4V 20 ID, Drain Current (A) ID, Drain Current(A) 16 12 VGS=10,9,8,7,6,5V 8 VGS=3V 4 0 15 10 -55 C 0 1 0 2 3 4 5 6 0 0.8 VDS, Drain-to-Source Voltage (V) 1000 1.8 RDS(ON), On-Resistance (Normalized) C, Capacitance (pF) 2.2 Ciss 600 400 Coss Crss 0 0 5 10 15 20 25 2.4 3.2 4.0 4.8 Figure 2. Transfer Characteristics 1200 200 1.6 VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 800 Tj=125 C 5 1.4 1.0 0.8 0.4 0 -50 30 V G S =10V I D =6.6A -25 0 25 50 75 100 125 150 Tj=( C ) VDS, Drain-to Source Voltage (V) T j, J unction T emperature ( C ) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4 V 5 S T M8405 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V GS I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 1.15 1.10 I D =-250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 6. B r eak down V oltage V ar iation with T emper atur e F igur e 5. G ate T hr eshold V ar iation with T emper atur e 20.0 15 12 Is , S ource-drain current (A) gF S , T rans conductance (S ) 5 V th, Normalized G ate-S ource T hres hold V oltage N-C hannel 9 6 3 V DS =5V 0 0 5 10 15 20 10.0 1.0 0.4 I DS , Drain-S ource C urrent (A) 0.6 0.8 1.0 1.2 1.4 V S D , B ody Diode F orward V oltage (V ) F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent 5 S T M8405 P-C hannel 25 20 25 C -V G S =10,9,8,7,6,5V -I D , Drain C urrent (A) 12 8 -VGS=3V 4 0 C , C apacitance (pF ) 20 -V G S =4V 1 0 2 3 4 T j=125 C 10 5 0 6 5 -55 C 15 0 1.6 2.4 3.2 4.0 4.8 -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C har acter istics F igure 2. Tr ansfer C har acter istics 1200 2.2 1000 1.8 800 C is s 600 400 200 0 0.8 -V DS , Drain-to-S ource Voltage (V ) RDS(ON), On-Resistance (Normalized) -I D , Drain C urrent (A) 16 C os s C rs s 0 5 10 15 20 25 1.4 1.0 0.8 0.4 0 -50 30 V G S =-10V I D =-5A -25 0 25 50 75 100 125 150 Tj=( C ) T j, J unction T emperature ( C ) -V DS , Drain-to S ource Voltage (V ) F igure 4. On-R esistance Var iation with Temper ature F igure 3. C apacitance 6 S T M8405 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.6 V DS =V GS I D =-250uA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 1.15 1.10 I D =-250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 6. B r eak down V oltage V ar iation with T emper atur e F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 20.0 12 -Is , S ource-drain current (A) gF S , T rans conductance (S ) 5 V th, Normalized G ate-S ource T hres hold V oltage P-C hannel 9 6 3 V DS =-5V 0 0 5 10 15 20 10.0 1.0 0.4 -I DS , Drain-S ource C urrent (A) 0.6 0.8 1.0 1.2 1.4 -V S D , B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 7 S T M8405 40 10 I D , Drain C urrent (A) V DS =15V I D =6.6A 8 6 4 2 10 R 0 3 6 9 12 15 18 (O DS N) L im it 10 10m 0m 1s 11 V G S =10V S ingle P ulse T A =25 C 0.1 0.1 21 24 s s DC 0.03 0 Q g, T otal G ate C harge (nC ) 1 10 30 50 V DS , Drain-S ource V oltage (V ) F igur e 10. M aximum Safe O per ating A r ea F igur e 9. G ate C har ge P-C hannel 50 10 V DS =-15V I D =-5A 8 -I D , Drain C urrent (A) -V G S , G ate to S ource V oltage (V ) 5 V G S , G ate to S ource V oltage (V ) N-C hannel 6 4 2 0 10 R 3 6 9 12 15 18 Q g, T otal G ate C harge (nC ) N) L im it 10 10 0m ms s 1s DC 0.1 V G S =-10V S ingle P ulse T A =25 C 0.1 21 24 (O 11 0.03 0 DS 1 10 50 -V DS , B ody Diode F orward V oltage (V ) F igur e 10. M aximum Safe O per ating A r ea F igur e 9. G ate C har ge 8 S T M8405 V DD ton 5 V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit N-C hannel Thermal Resistance Normalized Transient 10 1 0.5 0.2 P DM 0.1 0.1 0.05 t1 0.02 on 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 P-C hannel 0.001 0.01 0.1 1 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 10 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Thermal Resistance Normalized Transient 10 1 0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 on 0.01 0.01 0.00001 1. 2. 3. 4. Single Pulse 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M8405 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45° B 0.016 TYP. S Y MB OLS A A1 D E H L A1 e 0.05 TYP. 0.008 TYP. H MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° 10 INC HE S MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° S T M8405 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 D0 D1 E E1 E2 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 M N W W1 H K 330 ± 1 62 ±1.5 P1 P2 T 8.0 4.0 2.0 ±0.05 0.3 ±0.05 S G R V P0 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 12.4 + 0.2 16.8 - 0.4 11 ψ12.75 + 0.15 2.0 ±0.15