S T U409DH S amHop Microelectronics C orp. May 29 2007 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m W ) V DS S ID 40V 18A P R ODUC T S UMMAR Y (P -C hannel) Max R DS (ON) ( m W ) V DS S ID -40V -14A 24 @ V G S = 10V 35 @ V G S = -10V 30 @ V G S = 4.5V 50 @ V G S = -4.5V D2 D1 D1/D2 G1 S1 G1 S2 G2 Max G2 S1 TO-252-4L N-ch S2 P -ch ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter Drain-S ource Voltage V DS Gate-S ource Voltage V GS 25 C Drain C urrent-C ontinuous @ Tc -P ulsed a Drain-S ource Diode Forward C urrent Maximum P ower Dissipation -40 20 20 V 15 -11 A A IDM 50 -50 A IS 8 -6 A PD 11 7.7 Operating Junction and S torage Temperature R ange V -14 Tc= 25 C Tc= 70 C 40 Unit 18 ID 70 C N-C hannel P-C hannel W T J , T S TG -55 to 175 C Thermal R esistance, Junction-to-C ase R JC 13.6 C /W Thermal R esistance, Junction-to-Ambient R JA 120 C /W THE R MAL C HAR AC TE R IS TIC S 1 S T U409DH N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 32V, V GS = 0V 1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA 1.8 3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =10V, ID = 8A 18 24 m ohm V GS =4.5V, ID= 6A 23 30 m ohm On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 40 V ON CHAR ACTE R IS TICS a Forward Transconductance V DS = 5V, V GS = 4.5V 1 20 A 17 S 700 PF 120 PF 75 PF 11 ns 12 ns 45 ns 11 ns V DS =20V, ID =8A,V GS =10V 14 nC V DS =20V, ID =8A,V GS =4.5V 7 1.6 nC 3.4 nC V DS = 10V, ID= 8A DYNAMIC CHAR ACTE R IS TICS b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =20V, V GS = 0V f =1.0MH Z b tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DD = 20V ID = 3 A V GS = 10V R GE N = 3 ohm V DS =20V, ID = 8 A V GS =10V 2 nC S T U409DH P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -32V, V GS = 0V -1 uA Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 10 uA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA -1.8 -3 V Drain-S ource On-S tate R esistance R DS (ON) V GS =-10V, ID= -6A 28 35 m ohm V GS =-4.5V, ID= -4A 42 50 m ohm On-S tate Drain Current ID(ON) gFS -40 V ON CHAR ACTE R IS TICS a Forward Transconductance V DS = -5V, V GS = -10V -1 -20 A 11 S 1000 PF 175 PF 95 PF 11 ns 15 ns 72 ns 30 ns V DS =-20V, ID =-6A,V GS =-10V 17.5 nC V DS =-20V, ID =-6A,V GS =-4.5V 8.5 nC 2.3 nC nC V DS = -10V, ID = -6A DYNAMIC CHAR ACTE R IS TICS b Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge V DS =-20V, V GS = 0V f =1.0MH Z b tD(ON) tr tD(OFF) V DD = -20V ID = -3A V GS = -10V R GE N = 3 ohm tf Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd V DS =-20V, ID = -6 A V GS =-10V 3 4.5 S T U409DH ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition Symbol DRAIN-SOURCE DIODE CHARACTERISTICS b Diode Forward Voltage VGS = 0V, Is =8A VGS = 0V, Is =-6A VSD N-Ch P-Ch 1.3 -1.3 0.94 -0.87 V Notes a.Pulse Test:Pulse Width＜300μs, Duty Cycle ＜2%. b.Guaranteed by design, not subject to production testing. N-Channel 20 50 V G S =5V V G S =4.5V 16 V G S =10V V G S =4V I D , Drain C urrent (A) ID , Drain C urrent(A) 40 30 V G S =3.5V 20 V G S =3V 10 12 T j=125 C 8 -55 C 25 C 4 V G S =2.5V 0 0 0 0.5 1 2 1.5 2.5 3 0 V DS , Drain-to-S ource Voltage (V ) 2.4 3.2 4.0 4.8 F igure 2. Trans fer C haracteris tics 2.0 R DS (ON) , On-R es is tance Normalized 60 50 R DS (on) (m W) 1.6 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 40 V G S =4.5V 30 20 V G S =10V 10 0 0.8 1 10 20 30 40 1.8 1.4 1.2 V G S =4.5V I D =6A 1.0 0.0 50 V G S =10V I D =8A 1.6 0 25 50 75 100 125 150 T j( C ) I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage 4 F igure 4. On-R es is tance Variation with Drain C urrent and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.2 VDS=VGS ID=250uA 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 100 125 150 1.40 ID=250uA 1.30 1.20 1.10 1.00 0.90 0.80 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 6. Breakdown Voltage Variation with Temperature Figure 5. Gate Threshold Variation with Temperature 20.0 60 ID=8A Is, Source-drain current (A) 50 RDS(on) (m W) 6 Vth, Normalized Gate-Source Threshold Voltage STU409DH 40 125 C 30 20 25 C 75 C 10 0 0 2 4 6 8 10.0 25 C 125 C 1.0 10 VGS, Gate- Source Voltage (V) 0.4 75 C 0.6 0.8 1.0 1.2 1.4 VSD, Body Diode Forward Voltage (V) Figure 7. On-Resistance vs. Gate-Source Voltage Figure 8. Body Diode Forward Voltage Variation with Source Current 5 S T U409DH V G S , G ate to S ource V oltage (V ) 1200 800 C is s 600 400 C os s 200 C rs s 0 0 V DS =20V I D =8A 8 6 4 2 0 5 10 15 20 25 30 0 2 6 4 V DS , Drain-to S ource Voltage (V ) 8 10 12 14 16 Qg, T otal G ate C harge (nC ) F igure 10. G ate C harge F igure 9. C apacitance 100 300 100 60 T D(off) I D , Drain C urrent (A) S witching T ime (ns ) 80 T D(on) Tr Tf 10 V DS =20V ,ID=3A 1 V G S =10V 1 R DS ( ) ON L im it 1m 10 1s DC 1 0.5 0.1 60 100 300 600 6 10 10 10 0m s ms s V G S =10V S ingle P ulse T c=25 C 1 R g, G ate R es is tance ( W) 10 30 V DS , Drain-S ource V oltage (V ) 2 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 0.01 1. 2. 3. 4. S ING LE P ULS E 0.01 10 -5 10 -4 60 F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics r(t),Normalized E ffective T ransient T hermal Impedance 6 C , C apacitance (pF ) 1000 10 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 6 10 S T U409DH P-C hannel 20 25 V G S =-5V V G S =-4V 15 V G S =-3.5V 10 5 0 16 V G S =-4.5V 20 -I D , Drain C urrent (A) -I D , Drain C urrent(A) V G S =-10V V G S =-3V 0 12 T j=125 C 8 25 C 0 0.5 1 2 1.5 2.5 3 0 -V DS , Drain-to-S ource Voltage (V ) 2.0 3.0 4.0 5.0 6.0 F igure 2. Trans fer C haracteris tics 90 R DS (ON) , On-R es is tance Normalized 1.5 75 R DS (on) (m W) 1.0 -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 60 V G S =-4.5V 45 30 V G S =-10V 15 0 -55 C 4 1 5 10 15 20 1.4 1.3 1.2 V G S =-4.5V I D =-4A 1.1 1.0 0.0 25 V G S =-10V I D =-6A 0 25 50 75 100 125 150 T j( C ) -I D , Drain C urrent (A) T j, J unction T emperature ( C ) F igure 3. On-R es is tance vs . Drain C urrent and G ate V oltage F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 7 B V DS S , Normalized Drain-S ource B reakdown V oltage 1.3 V DS =V G S I D =-250uA 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 1.15 I D =-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 0 -25 25 75 100 125 150 50 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 120 I D =-6A -Is , S ource-drain current (A) 100 R DS (on) (m W) 6 V th, Normalized G ate-S ource T hres hold V oltage S T U409DH 80 60 125 C 40 75 C 20 0 0 2 4 25 C 6 8 10.0 125 C 1.0 0.3 10 -V G S , G ate- S ource Voltage (V ) 25 C 75 C 0.5 0.7 0.9 1.1 1.3 -V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 8 S T U409DH -V G S , G ate to S ource V oltage (V ) 1200 C is s 800 600 400 C os s 200 C rs s 0 0 V DS =-20V I D =-6A 8 6 4 2 0 5 10 15 20 25 30 0 3 12 15 18 21 24 Qg, T otal G ate C harge (nC ) F igure 9. C apacitance F igure 10. G ate C harge 300 70 10 V DS =-20V ,ID=-3A 1 t im i )L (O N T D(on) 10 1 0.03 60 100 300 600 6 10 ms 10 DC V G S =10V 1 10 S Tf 50 RD Tr T D(off) 100 60 -I D , Drain C urrent (A) S witching T ime (ns ) 9 6 -V DS , Drain-to S ource Voltage (V ) 0 1 s ms V G S =-10V S ingle P ulse T c=25 C 0.1 1 R g, G ate R es is tance ( W) 10 30 60 -V DS , Drain-S ource V oltage (V ) F igure 12. Maximum S afe O perating Area F igure 11.s witching characteris tics 2 r(t),Normalized E ffective T ransient T hermal Impedance 6 C , C apacitance (pF ) 1000 10 1 D=0.5 0.2 0.1 0.1 P DM 0.05 t1 0.02 1. 2. 3. 4. 0.01 S ING LE P ULS E 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 t2 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 9 10 S T U409DH P A C K A G E OUT L INE DIME NS IONS TO-252-4L A B H K C M J L D S G P REF . Millimeters MIN MAX A 6.40 6.80 B 5.2 5.50 C 6.80 10.20 D 2.20 3.00 1.27 REF. P S 0.50 0.80 G 0.40 0.60 H 2.20 2.40 J 0.45 0.60 K 0 0.15 L 0.90 1.50 M 5.40 5.80 10 S T U409DH TO-252-4L Tape and Reel Data TO-252-4L Carrier Tape 6 4 TO-252-4L Reel UNIT:㎜ 11