TRANSISTOR MODULE SQD300A40/60 UL;E76102 （M） 108max 93±0.5 4-φ6.5 ● Low BX B EX 11.013.0 21.0 E 2-M4 ×7.5 C 36.0max BX EX 29.0 2-M6 ×13 25.5max （Applications） Motor Control（VVVF） , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application 41.5max VCEX＝400/600V saturation voltage for higher efficiency. ● High DC current gain hFE ● Isolated mounting base ● VEBO 10V for faster switching speed. 20.0 20.0 ● IC＝300A, C 48±0.5 E 63max SQD300A is a Darlington power transistor module which a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, B Unit：A ■Maximum Ratings （Tj＝25℃ unless otherwise specified） Symbol Item Conditions VCBO Collector-Base Voltage VCEX Collector-Emitter Voltage VEBO Emitter-Base Voltage IC −IC VBE＝−2V Ratings SQD300A40 SQD300A60 400 600 V 400 600 V 10 （ ）=pw≦1ms Collector Current IB Base Current Total power dissipation V 300（600） A 300 A Reverse Collector Current PT Unit TC＝25℃ 18 A 1380 W Tj Junction Temperature −40 to ＋150 ℃ Tstg Storage Temperature −40 to ＋125 ℃ VISO Isolation Voltage 2500 V Mounting Torque A.C.1minute Mounting（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M6） Recommended Value 2.5-3.9（25-40） 4.7（48） Terminal（M4） Recommended Value 1.0-1.4（10-14） 1.5（15） Mass Typical Value 460 N･m (㎏f･B) g ■Electrical Characteristics Symbol Item Conditions Ratings Min. Max. Unit ICBO Collector Cut-off Current VCB＝VCBO 3.0 mA IEBO Emitter Cut-off Current VEB＝VEBO 1000 mA SQD300A40 VCEO（SUS） Collector Emitter Sustaning Voltage VCEX（SUS） hFE SQD300A60 SQD300A40 SQD300A60 DC Current Gain Ic＝1A Ic＝60A，IB2＝−10A 300 V 450 400 V 600 Ic＝300A，VCE＝2V 75 Ic＝300A，VCE＝5V 100 VCE(sat) Collector-Emitter Saturation Voltage Ic＝300A，IB＝4.0A 2.0 V VBE(sat) Base-Emitter Saturation Voltage Ic＝300A，IB＝4.0A 2.5 V ton ts On Time Switching Time tf VECO Rth(j-c) Storage Time Fall Time 2.0 Vcc＝300V，Ic＝300A IB1＝6A，IB2＝−6A 12.0 μs 3.0 Collector-Emitter Reverse Voltage −Ic＝300A 1.4 Thermal Impedance (junction to case) Transistor part 0.09 Diode part 0.3 V ℃/W SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] SQD300A40/60 D.C. Current Gain Collector-Emitter Voltage VＣＥ （V） Base-Emitter Voltage VBE（V） ２ ３ DC Current Gain hFE １０ ５ ２ Tj＝125℃ ２ １０ ５ Tj＝25℃ VCE＝5V VCE＝2V Typical ２ １００ ２ １０１ ５ ２ １０２ ５ ２ ５ ６ Saturation Characteristics Ic＝100A Ic＝200A Ic＝300A ５ VCE VCB Typical Tj＝25℃ ４ ３ Ic＝300A Ic＝200A Ic＝100A ２ １ ０ １０−１ ５ ２ Collector Current Ic（A） Forward Bias Safe Operating Area PTLim ited 50 1m Collector Current Ic（A） 00μ Wi s de ２ １０２ ５ ７００ Pu 1 lse 0μ s s 10 m s Collector Current Ic（A） ５ ２ １０１ IS /B ５ Tc＝25℃ Non-Repetitive ２ SOD300 A40 １ ５ １０ ２ ５ ６００ IB2＝−4A ５００ IB2＝−10A ４００ ２ １０ ２ １００ SOD300 A60 ５ Tj＝125℃ ２００ ０ ０ ３ １０ Collector Reverse Current -Ic（A） Derating Factor（%） IS/B Lim ited PT Lim ite d ５０ ５０ １００ ２ ５ ２ １０−１ ０ ton tf tf １００ ２００ Collector Current Ic（A） ５００ ６００ ７００ Ｔ ｊ=２５℃ １０２ ５ ２ １０２ ５ ０ ２ １． ０ １． ５ ２． ０ ３００ Maximum Transient Thermal Impedance Characteristics Max Junction to case −１ １０ 50msec∼50sec ５ ２ １０−２ １００ ２ ４００ Maximum ２ Transient Thermal Impedance θj-c（℃/W） Switching Time ton tf ts（μs） ５ ５ ３００ Emitter-Collector Voltage VECO（V） IB1＝6A IB2＝−0.6A VCC＝300V Tj＝25℃ Typical ts １０１ ２００ １０３ １５０ Collector Current Vs Switching Time ２ １００ SQD300 A60 Forward Voltage of Free Wheeling Diode Case Temperature（℃） ５ SQD300 A40 Collector-Emitter Voltage VCE（V） Collector Current Derating Factor ０ ０ １０１ ５ Reverse Bias Safe Operating Area Collector-Emitter Voltage VCE（V） １００ ２ ３００ Lim ite d １００ ５ １００ Base Current I（ B A） 100μsec∼50msec ５ ２ １００μ２００μ ５００μ １ｍ ５０ｍ １００ｍ２００ｍ ５００ｍ １ ２ｍ ５ｍ １０ｍ ２０ｍ ５０ｍ ２ ５ ５０ １０ ２０ Time t（sec） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]