SEME-LAB 2N3810DCSM

SEME
2N3810DCSM
LAB
DUAL HIGH GAIN
PNP TRANSISTORS IN A
HERMETICALLY SEALED
CERAMIC SURFACE MOUNT PACKAGE
FOR HIGH RELIABILITY APPLICATIONS
MECHANICAL DATA
Dimensions in mm (inches)
FEATURES
3
1
4
A
6
5
6.22 ± 0.13
(0.245 ± 0.005)
0.23 rad.
(0.009)
A=
• SPACE QUALITY LEVELS OPTIONS
1.27 ± 0.13
(0.05 ± 0.005)
LCC2 PACKAGE
Underside View
PAD 1 – Collector 1
PAD 2 – Base 1
PAD 3 – Base 2
• CECC SCREENING OPTIONS
4.32 ± 0.13
(0.170 ± 0.005)
2.54 ± 0.13
(0.10 ± 0.005)
2
• HERMETIC CERAMIC SURFACE
MOUNT PACKAGE
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
0.64 ± 0.08
(0.025 ± 0.003)
2.29 ± 0.20
(0.09 ± 0.008)
PAD 4 – Collector 2
PAD 5 – Emitter 2
PAD 6 – Emitter 1
APPLICATIONS:
Suitable for use in high gain, low noise
differential amplifier applications.
ABSOLUTE MAXIMUM RATINGS
VCBO
VCEO
VEBO
IC
PD
TSTG
(Tamb = 25°C unless otherwise stated)
Collector – Base Voltage
Collector – Emitter Voltage 1
Emitter – Base Voltage
Collector Current
Total Device Dissipation
Derate above 25°C
Storage Temperature Range
EACH SIDE
TOTAL DEVICE
–60V
–60V
–5V
–50mA
500mW
600mW
2.9mW / °C
3.4mW / °C
–65 to 200°C
NOTES
1. Base – Emitter Diode Open Circuited.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/95
SEME
2N3810DCSM
LAB
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions 1
Min.
Typ.
Max. Unit
INDIVIDUAL TRANSISTOR CHARACTERISTICS
Collector – Base Breakdown Voltage
IC = –10µA
IE = 0
–60
V(BR)CEO*
Collector – Emitter Breakdown Voltage IC = –10mA
IB = 0
–60
V(BR)EBO
Emitter – Base Breakdown Voltage
IE = –10µA
IC = 0
–5
ICBO
Collector Cut-off Current
VCB = –50V
IE = 0
–10
nA
TA = 150°C
–10
µA
IEBO
Emitter Cut-off Current
VEB = –4V
IC = 0
–20
nA
IC = –10µA
VCE = –5V
100
IC = –100µA
VCE = –5V
150
TA = –55°C
75
IC = –500µA
VCE = –5V
150
450
IC = –1mA
VCE = –5V
150
450
IC = –10mA
VCE = –5V *
125
IC = –100µA
VCE = –5V
–0.7
IB = –10µA
IC = –100µA
–0.7
IB = –100µA
IC = –1mA
–0.8
IB = –10µA
IC = –100µA
–0.2
IB = –100µA
IC = –1mA
–0.25
V(BR)CBO
hFE
VBE
DC Current Gain
Base – Emitter Voltage
VCE(sat)
Collector – Emitter Saturation Voltage
hie
Small Signal Common – Emitter
Input Impedance
hfe
Small Signal Common – Emitter
Current Gain
hre
Small Signal Common – Emitter
Reverse Voltage Gain
hoe
Small Signal Common – Emitter
V
V
kΩ
3
30
150
600
—
25 x 10
-4
f = 1kHz
5
Small Signal Common – Emitter
f = 30MHz
Current Gain
VCE = –5V
IC = –500µA
IC = –1mA
f = 100MHz
Cibo
—
IC = –1mA
VCE = –5V
Cobo
450
VCE = –10V
Output Admittance
|hfe|
V
Common – Base Open Circuit
VCB = –5V
Output Capacitance
f = 100kHz
Common – Base Open Circuit
VEB = –0.5V
Input Capacitance
f = 100kHz
IE = 0
IC = 0
60
µmho
1
—
1
5
4
pF
8
NOTES
* Pulse Test: tp = 300µs, δ ≤ 2%.
1) Terminals not under test are open circuited under all test conditions.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/95
SEME
2N3810DCSM
LAB
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
TRANSISTOR MATCHING CHARACTERISTICS
Static Forward Current Gain
VCE = –5V
hFE1
hFE2
Balance Ratio
|VBE1 – VBE2|
Base – Emitter Voltage
Differential
|∆(VBE1 – VBE2)∆TA|
Base – Emitter Voltage
Differential
IC = –100µA
See Note 2.
Min.
Typ.
0.9
5
IC = –10µA to –10mA
IC = –100µA
VCE = –5V
IC = –100µA
TA1 = 25°C
TA2 = –55°C
VCE = –5V
IC = –100µA
TA1 = 25°C
TA2 = 125°C
—
1
VCE = –5V
VCE = –5V
Max. Unit
mV
3
0.8
mV
1
OPERATING CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions 1
INDIVIDUAL TRANSISTOR CHARACTERISTICS
VCE = –10V
RG = 3kΩ
Min.
Typ.
Max. Unit
IC = –100µA
f = 100Hz
7
Noise Bandwidth = 20Hz
F
Spot Noise Figure
VCE = –10V
IC = –100µA
RG = 3kΩ
f = 1kHz
dB
3
Noise Bandwidth = 200Hz
VCE = –10V
IC = –100µA
RG = 3kΩ
f = 10kHz
2.5
Noise Bandwidth = 2kHz
VCE = –10V
_
F
Average Noise Figure
IC = –100µA
RG = 3kΩ
Noise Bandwidth = 15.7kHz
3.5
dB
See Note 3.
NOTES
1) Terminals not under test are open circuited under all test conditions.
2) The lower of the two readings is taken as hFE1.
3) Average noise figure is measured in an amplifier with response down 3dB at 10Hz and 10 kHz and a high frequency
rolloff of 6dB / octave.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/95
SEME
2N3810DCSM
LAB
THERMAL INFORMATION
PT M axim um Continuous D issipation (W )
0.8
0.7
0.6
0.5
TO TA L D EVIC E
0.4
EAC H
TR AN SISTO R
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
175
200
TA Free Air Temperature (˚C)
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/95