IRF630M IRF630MFP N-CHANNEL 200V - 0.35Ω - 9A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE ■ ■ ■ ■ VDSS RDS(on) ID IRF630M 200 V < 0.40 Ω 9A IRF630FPM 200 V < 0.40 Ω 9A TYPICAL RDS(on) = 0.35 Ω EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 3 2 1 TO-220 DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCB’s. 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM .APPLICATIONS ■ MONITOR DISPLAYS ■ GENERAL PURPOSE SWITCH ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value IRF630M VDS VDGR VGS Unit IRF630MFP Drain-source Voltage (VGS = 0) 200 V Drain-gate Voltage (RGS = 20 kΩ) 200 V Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 9 9 (**) A ID Drain Current (continuos) at TC = 100°C 5.7 5.7 (**) A Drain Current (pulsed) 36 36 A IDM (●) PTOT Total Dissipation at TC = 25°C 75 30 W Derating Factor 0.6 0.24 W/°C 5 V/ns dv/dt (1) Peak Diode Recovery voltage slope 5 VISO Insulation Winthstand Voltage (DC) -- Tstg Storage Temperature Tj Max. Operating Junction Temperature (•)Pulse width limited by safe operating area October 2001 2500 V –65 to 150 °C 150 °C (1)ISD ≤9A, di/dt ≤300A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX. (**) Limited only by Maximum Temperature Allowed 1/9 IRF630M / FP THERMAL DATA TO-220 TO-220FP 1.67 4.17 Rthj-case Thermal Resistance Junction-case Max Rthj-amb Thermal Resistance Junction-ambient Max 62.5 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (VGS = 0) VDS = Max Rating Gate-body Leakage Current (VDS = 0) VGS = ± 20V Min. Typ. Max. 200 Unit V VDS = Max Rating, TC = 125 °C 1 µA 50 µA ±100 nA ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA RDS(on) Static Drain-source On Resistance VGS = 10V, ID = 4.5 A Min. Typ. Max. Unit 2 3 4 V 0.35 0.40 Ω Min. Typ. Max. Unit 3 4 DYNAMIC Symbol gfs (1) 2/9 Parameter Forward Transconductance Test Conditions VDS > ID(on) x RDS(on)max, ID = 4.5 A VDS = 25V, f = 1 MHz, VGS = 0 S Ciss Input Capacitance 540 700 pF Coss Output Capacitance 90 120 pF Crss Reverse Transfer Capacitance 35 50 pF IRF630M / FP ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Parameter Turn-on Delay Time Rise Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Test Conditions Min. VDD = 100 V, ID = 4.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) VDD = 160V, ID = 9 A, VGS = 10V Typ. Max. Unit 10 14 ns 15 20 ns 31 45 nC 7.5 nC 9 nC SWITCHING OFF Symbol tr(Voff) Parameter Off-voltage Rise Time tf Fall Time tc Cross-over Time Test Conditions Min. VDD = 160V, ID = 9 A, RG = 4.7Ω, VGS = 10V (see test circuit, Figure 5) Typ. Max. Unit 12 17 ns 12 17 ns 25 35 ns Typ. Max. Unit 9 A SOURCE DRAIN DIODE Symbol ISD Parameter Test Conditions Min. Source-drain Current ISDM (2) Source-drain Current (pulsed) VSD (1) Forward On Voltage ISD = 9 A, VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 9 A, di/dt = 100A/µs VDD = 50 V, Tj = 150°C (see test circuit, Figure 5) IRRM Reverse Recovery Current 36 A 1.5 V 170 ns 0.95 µC 11 A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area for TO-220 Safe Operating Area for TO-220FP 3/9 IRF630M / FP Thermal Impedence for TO-220 Thermal Impedence for TO-220FP Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance 4/9 IRF630M / FP Gate Charge vs Gate-source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 IRF630M / FP Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 IRF630M / FP TO-220 MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.40 4.60 0.173 0.181 C 1.23 1.32 0.048 0.051 D 2.40 2.72 0.094 D1 0.107 1.27 0.050 E 0.49 0.70 0.019 0.027 F 0.61 0.88 0.024 0.034 F1 1.14 1.70 0.044 0.067 F2 1.14 1.70 0.044 0.067 G 4.95 5.15 0.194 0.203 G1 2.4 2.7 0.094 0.106 H2 10.0 10.40 0.393 0.409 L2 16.4 0.645 13.0 14.0 0.511 0.551 L5 2.65 2.95 0.104 0.116 L6 15.25 15.75 0.600 0.620 L7 6.2 6.6 0.244 0.260 L9 3.5 3.93 0.137 0.154 DIA. 3.75 3.85 0.147 0.151 D1 C D A E L4 H2 G G1 F1 L2 F2 F Dia. L5 L9 L7 L6 L4 P011C 7/9 IRF630M / FP TO-220FP MECHANICAL DATA mm DIM. MIN. inch TYP. MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 B 2.5 2.7 0.098 0.106 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 0.039 F1 1.15 1.7 0.045 0.067 F2 1.15 1.7 0.045 0.067 G 4.95 5.2 0.195 0.204 G1 2.4 2.7 0.094 0.106 H 10 10.4 0.393 0.409 L2 16 0.630 28.6 30.6 1.126 1.204 L4 9.8 10.6 0.385 0.417 L6 15.9 16.4 0.626 0.645 L7 9 9.3 0.354 0.366 Ø 3 3.2 0.118 0.126 B D A E L3 L3 L6 F2 H G G1 ¯ F F1 L7 1 2 3 L2 8/9 L4 IRF630M / FP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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