AP09N90CW
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Minimize On-resistance
▼ Fast Switching
▼ Simple Drive Requirement
G
BVDSS
900V
RDS(ON)
1.4Ω
ID
7.6A
S
Description
AP09N90C provides minimize on-state resistance , superior switching
performance and high efficiency switching power supply applications.
TO-3P package is preferred for commercial-industrial applications and
provides greater distance between pins to meet the requirements of most
safety specifications.
G
TO-3P
D
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
± 30
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
7.6
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
4.8
A
1
IDM
Pulsed Drain Current
25
A
PD@TC=25℃
Total Power Dissipation
208
W
1.6
W/℃
120
mJ
6
A
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Thermal Resistance Junction-case
Max.
0.60
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
40
℃/W
Data & specifications subject to change without notice
200731031
AP09N90CW
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
900
-
-
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
-
0.74
-
V/℃
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=3.6A
-
1.25
1.4
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=3.6A
-
3.6
-
S
VDS=900V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=125 C)
VDS=720V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= ± 30V
-
-
±100
nA
ID=7.2A
-
50.7
80
nC
o
IDSS
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
3
VGS=0V, ID=1mA
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=540V
-
12
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
16
-
nC
VDD=450V
-
20
-
ns
3
td(on)
Turn-on Delay Time
tr
Rise Time
ID=7.2A
-
16
-
ns
td(off)
Turn-off Delay Time
RG=6.8Ω,VGS=10V
-
65
-
ns
tf
Fall Time
RD=62.5Ω
-
27
-
ns
Ciss
Input Capacitance
VGS=0V
-
3097
5000
pF
Coss
Output Capacitance
VDS=15V
-
516
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
19
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=7.2A, VGS=0V
-
-
1.5
A
trr
Reverse Recovery Time
IS=7.2A, VGS=0V,
-
673
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9.6
-
µC
Notes:
1.Pulse width limited by safe operating area.
2.Starting Tj=25oC , VDD=50V , L=6.8mH , RG=25Ω , IAS=6A.
3.Pulse width <300us , duty cycle <2%.
AP09N90CW
5
10
T C =25 o C
6
4.5V
4
V G =4.0V
2
10V
7.0V
5.0V
4.5V
4
ID , Drain Current (A)
8
ID , Drain Current (A)
T C =150 o C
10V
7.0V
5.0V
3
2
V G =4.0V
1
0
0
0
2
4
6
8
10
12
14
16
18
0
V DS , Drain-to-Source Voltage (V)
2
4
6
8
10
12
14
16
18
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1.2
I D =3.6A
2.5
V G =10V
Normalized RDS(ON)
Normalized BVDSS (V)
1.1
1
2.0
1.5
1.0
0.9
0.5
0.8
0.0
-50
0
50
100
Junction Temperature (
o
-50
150
Fig 3. Normalized BV DSS v.s. Junction
100
150
10
3
VGS(th) (V)
4
IS (A)
50
Fig 4. Normalized On-Resistance
100
T j = 150 o C
0
T j , Junction Temperature ( o C)
C)
T j = 25 o C
1
2
1
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.6
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP09N90CW
15
f=1.0MHz
10000
I D =7.2A
VGS , Gate to Source Voltage (V)
12
Ciss
V DS =180V
V DS =360V
V DS =540V
1000
C (pF)
9
Coss
6
100
3
Crss
10
0
0
20
40
60
1
80
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
10
10ms
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
100ms
1
1s
DC
0.1
o
T c =25 C
Single Pulse
DUTY=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.01
0.1
1
10
100
1000
10000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q