AP02N90H/J
Pb Free Plating Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
▼ Low On-resistance
▼ Fast Switching Characteristics
BVDSS
RDS(ON)
ID
D
900V
7.2Ω
1.9A
G
S
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G D
The TO-252 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50
watts. The through-hole version (AP02N90J) is available for lowprofile applications.
S
TO-252(H)
G
D S
TO-251(J)
Rating
Units
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
900
V
VGS
Gate-Source Voltage
±30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
1.9
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
1.2
A
6
A
62.5
W
0.5
W/℃
36
mJ
1.9
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Thermal Resistance Junction-case
Max.
2.0
℃/W
Rthj-a
Thermal Resistance Junction-ambient
Max.
110
℃/W
Data & specifications subject to change without notice
200418063-1/4
AP02N90H/J
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Typ.
Max. Units
900
-
0.8
-
V
V/℃
ΔBVDSS/ΔTj
VGS=0V, ID=1mA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.85A
-
-
7.2
Ω
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=1.9A
-
2
-
S
IDSS
Drain-Source Leakage Current (Tj=25oC)
VDS=900V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (Tj=125oC)
VDS=720V, VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=1.9A
-
12
20
nC
BVDSS
IGSS
Drain-Source Breakdown Voltage
Min.
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=540V
-
2.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
4.7
-
nC
3
td(on)
Turn-on Delay Time
VDD=450V
-
10
-
ns
tr
Rise Time
ID=1.9A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=236Ω
-
9
-
ns
Ciss
Input Capacitance
VGS=0V
-
630
1000
pF
Coss
Output Capacitance
VDS=25V
-
40
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
4
-
pF
Min.
Typ.
IS=1.9A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
3
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=1.9A, VGS=0V,
-
360
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
1.8
-
µC
Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=20mH , RG=25Ω , IAS=1.9A.
3.Pulse width <300us , duty cycle <2%.
2/4
AP02N90H/J
2.0
1.25
10V
8.0V
6.0V
5.0V
ID , Drain Current (A)
1.6
1.00
1.2
0.8
V G =4.5V
0.4
0.75
0.50
0.25
0.00
0.0
0
3
6
9
12
15
0
18
3
6
9
12
15
18
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.8
1.2
2.4
I D = 0.85 A
V G =10V
Normalized R DS(ON)
1.1
Normalized BVDSS (V)
10V
8.0V
6.0V
5.0V
V G =4.5V
T C =150 o C
ID , Drain Current (A)
T C =25 o C
1.0
2.0
1.6
1.2
0.8
0.9
0.4
0.0
0.8
-50
0
50
100
150
-50
0
50
100
150
o
o
T j , Junction Temperature ( C )
Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Temperature
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
1.6
IS(A)
T j =150 o C
Normalized VGS(th) (V)
1.5
T j =25 o C
1.0
0.5
1.2
0.8
0.4
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP02N90H/J
f=1.0MHz
14
1000
VGS , Gate to Source Voltage (V)
C iss
I D = 1.9 A
12
V DS = 180 V
V DS = 360 V
V DS = 540 V
100
C (pF)
10
8
C oss
6
10
4
C rss
2
1
0
0
4
8
12
1
16
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
10.00
Normalized Thermal Response (R thjc)
1
10us
ID (A)
1.00
100us
1ms
0.10
10ms
100ms
DC
T C =25 o C
Single Pulse
0.01
DUTY=0.
0.2
0.1
0.1
0.05
PDM
t
T
0.02
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.01
SINGLE
0.01
0.1
1
10
100
1000
10000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q