A-POWER AP4435D

AP4435D
Advanced Power
Electronics Corp.
▼ Low On-resistance
▼ Fast Switching Speed
▼ PDIP-8 Package
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BVDSS
RDS(ON)
ID
D
D
D
D
-30V
20mΩ
-9A
G
S
PDIP-8
S
S
Description
D
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
G
S
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Rating
Units
- 30
V
±20
V
3
-9
A
3
- 5.8
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
- 50
A
[email protected]=25℃
Total Power Dissipation
2.5
W
Linear Derating Factor
0.02
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
50
℃/W
201114031
AP4435D
Electrical [email protected]=25oC(unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
Min.
Typ.
-30
-
-
VGS=-10V, ID=-9A
-
VGS=-4.5V, ID=-5A
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance2
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
-0.03
-
V
V/℃
-
20
mΩ
-
-
35
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-9A
-
8.2
-
S
o
VDS=-30V, VGS=0V
-
-
-1
uA
o
Drain-Source Leakage Current (Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS= ± 20V
-
-
±100
nA
ID=-9.0A
-
26
42
nC
Drain-Source Leakage Current (Tj=25 C)
IGSS
Max. Units
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
16
-
nC
VDS=-15V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
70
-
ns
tf
Fall Time
RD=15Ω
-
48
-
ns
Ciss
Input Capacitance
VGS=0V
-
1330 2100
pF
Coss
Output Capacitance
VDS=-25V
-
580
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
160
-
pF
Min.
Typ.
-
-
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
Test Conditions
IS=-9.0A, VGS=0V
Max. Units
-1.2
V
trr
Reverse Recovery Time
IS=-9.0A, VGS=0V,
-
44
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
70
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on min. copper pad , t <10sec.
AP4435D
80
100
-10V
-8.0V
T A =25 o C
80
-10V
-8.0V
o
T A =150 C
-ID , Drain Current (A)
-ID , Drain Current (A)
60
60
-6.0V
40
-4.5V
20
-6.0V
40
-4.5V
20
V G = - 4.0V
V G =-4.0V
0
0
0
1
2
3
4
5
6
7
0
1
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
3
4
5
6
Fig 2. Typical Output Characteristics
1.8
40
I D = - 5.0 A
I D =-9.0A
1.6
T A =25 o C
V GS =-10V
Normalized RDS(ON)
35
RDS(ON) (mΩ )
2
-V DS , Drain-to-Source Voltage (V)
30
25
1.4
1.2
1.0
20
0.8
0.6
15
3
5
7
9
-50
11
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.5
8
7
2.25
-VGS(th) (V)
6
-IS(A)
5
4
T j =150 o C
T j =25 o C
2
1.75
3
1.5
2
1.25
1
0
1
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
150
AP4435D
f=1.0MHz
12
10000
I D =-9.0A
V DS =-24V
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
Ciss
1000
Coss
4
2
Crss
0
100
0
10
20
30
40
50
1
5
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
13
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
1ms
10ms
1
100ms
1s
o
T A =25 C
Single Pulse
0.1
DC
Normalized Thermal Response (Rthja)
1
10
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=90oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
Fig 9. Maximum Safe Operating Area
VDS
90%
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Fig 12. Gate Charge Waveform
Q