A-POWER AP4503GM

AP4503GM
Pb Free Plating Product
Advanced Power
Electronics Corp.
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
▼ Simple Drive Requirement
D2
D1 D2
D1 D1
D1
▼ Low On-resistance
▼ Fast Switching Performance
N-CH BVDSS
D2
D2
SO-8
SO-8
30V
RDS(ON)
28mΩ
ID
G2
G2
S2
S2
G1
S1 G1
S1
6.9A
P-CH BVDSS
Description
-30V
RDS(ON)
36mΩ
ID
-6.3A
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and costeffectiveness.
D2
D1
The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
N-channel
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
[email protected]=25℃
[email protected]=70℃
Units
P-channel
30
-30
V
±20
±20
V
3
6.9
-6.3
A
3
5.5
-5
A
30
-30
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
[email protected]=25℃
Total Power Dissipation
2.0
Linear Derating Factor
0.016
W
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient
Data and specifications subject to change without notice
3
Max.
Value
Unit
62.5
℃/W
201225061-1/7
AP4503GM
N-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
-
-
V
-
0.005
-
V/℃
VGS=10V, ID=6A
-
-
28
mΩ
VGS=4.5V, ID=4A
-
-
42
mΩ
VDS=VGS, ID=250uA
1
-
3
V
VDS=10V, ID=6A
-
5.7
-
S
Drain-Source Leakage Current (Tj=25 C)
VDS=30V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (Tj=70oC)
VDS=24V, VGS=0V
-
-
25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
ID=6A
-
9
15
nC
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
o
IDSS
IGSS
Typ. Max. Units
30
Static Drain-Source On-Resistance
2
VGS=0V, ID=250uA
Min.
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
6
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
7
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
19
-
ns
tf
Fall Time
RD=15Ω
-
6
-
ns
Ciss
Input Capacitance
VGS=0V
-
610
970
pF
Coss
Output Capacitance
VDS=25V
-
160
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
120
-
pF
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Min.
Typ. Max. Units
VSD
Forward On Voltage
IS=6A, VGS=0V
-
-
1.2
V
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.2V
-
-
1.7
A
trr
Reverse Recovery Time
IS=6A, VGS=0V
-
18
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
11
-
nC
2/7
AP4503GM
P-CH Electrical [email protected]=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-30
-
-
V
-
-0.004
-
V/℃
VGS=-10V, ID=-6A
-
-
36
mΩ
VGS=-4.5V, ID=-4A
-
-
55
mΩ
VDS=VGS, ID=-250uA
-1
-
-3
V
VDS=-10V, ID=-6A
-
5.8
-
S
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current ( Tj=70 C)
VDS=-24V, VGS=0V
-
-
-25
uA
Gate-Source Leakage
VGS=±20V
-
-
±100
nA
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃,ID=-1mA
RDS(ON)
2
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
VGS=0V, ID=-250uA
o
Drain-Source Leakage Current (Tj=25 C)
o
IGSS
2
Max. Units
Qg
Total Gate Charge
ID=-6A
-
9
24
nC
Qgs
Gate-Source Charge
VDS=-24V
-
2
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
5
-
nC
VDS=-15V
-
12
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-1A
-
8
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
42
-
ns
tf
Fall Time
RD=15Ω
-
34
-
ns
Ciss
Input Capacitance
VGS=0V
-
960
1540
pF
Coss
Output Capacitance
VDS=-25V
-
300
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
220
-
pF
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-6A, VGS=0V
-
-
-1.2
V
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=-1.2V
-
-
-1.7
A
trr
Reverse Recovery Time
IS=-6A, VGS=0V
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135℃/W when mounted on min. copper pad.
3/7
AP4503GM
N-Channel
100
70
o
T A =25 C
10V
10V
T A =150 o C
60
ID , Drain Current (A)
ID , Drain Current (A)
80
7.0V
60
40
5.0V
4.5V
7.0V
50
40
5.0V
4.5V
30
20
20
V G =3.0V
V G =3.0V
10
0
0
0
1
2
3
4
5
6
7
0
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
42
I D =6A
V G =10V
I D =6A
38
1.6
o
Normalized RDS(ON)
T A =25 C
34
30
26
1.4
1.2
-6.3
-5
1.0
0.8
22
0.6
18
3
5
7
9
-50
11
0
50
100
o
T j ,Junction Temperature (
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
150
C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
7
6
1.5
VGS(th) (V)
5
IS(A)
RDS(ON) (mΩ )
1
4
3
T j =25 o C
T j =150 o C
1
2
0.5
1
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
T j ,Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4/7
AP4503GM
N-Channel
f=1.0MHz
10000
I D =6A
V DS =24V
10
1000
8
Ciss
C (pF)
VGS , Gate to Source Voltage (V)
12
▼ Fast Switching Performance
6
4
Coss
Crss
100
2
0
10
0
4
8
12
16
1
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
100
100us
1ms
1
10ms
0.1
100ms
1s
10s
DC
o
T A =25 C
Single Pulse
0.01
0.1
1
10
100
Normalized Thermal Response (Rthja)
1
10
ID (A)
13
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Dity factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
PDM
Single Pulse
0.01
t
-6.3
-5
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135o C/W
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5/7
AP4503GM
P-Channel
100
70
T A =25 o C
-10V
T A =150 o C
60
-10V
-7.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
80
60
-5.0V
-4.5V
40
-7.0V
50
40
30
-5.0V
-4.5V
20
20
V G =-3.0V
10
V G =-3.0V
0
0
0
1
2
3
4
5
6
0
7
-V DS , Drain-to-Source Voltage (V)
1
2
3
4
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
60
1.6
I D = -6 A
T A =25 o C
I D =-6A
V G =10V
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
50
40
1.2
1.0
-6.3
-5
30
0.8
20
0.6
3
5
7
9
11
-50
-V GS ,Gate-to-Source Voltage (V)
0
50
100
150
T j , Junction Temperature ( o C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
7
2.5
6
5
-VGS(th) (V)
2
-IS(A)
4
T j =150 o C
3
T j =25 o C
1.5
2
1
0
1
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6/7
AP4503GM
P-Channel
f=1.0MHz
12
10000
I D =-6A
V DS =-24V
-VGS , Gate to Source Voltage (V)
10
8
Ciss
C (pF)
1000
6
Coss
Crss
4
100
2
10
0
0.0
5.0
10.0
15.0
1
20.0
5
9
Fig 7. Gate Charge Characteristics
17
21
25
29
Fig 8. Typical Capacitance Characteristics
1
10
1ms
10ms
1
100ms
T A =25 o C
Single Pulse
0.1
1s
10s
DC
Normalized Thermal Response (Rthja)
100
-ID (A)
13
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
-6.3
-5
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=135oC/W
0.01
0.001
0.1
1
10
100
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
90%
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7/7