HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Typical Applications Features The HMC755LP4E is Ideal for: High Gain: 31 dB • Cellular/3G & LTE/4G High PAE: 28% @ +33 dBm Pout • WiMAX, WiBro & Fixed Wireless Low EVM: 2.5% @ +25 dBm Pout with 54 Mbps OFDM Signal • Military & SATCOM 9 Amplifiers - Linear & Power - SMT High Output IP3: +43 dBm • Test Equipment Functional Diagram Integrated Detector & Power Control 24 Lead 4x4mm QFN Package: 16mm² General Description The HMC755LP4E is a high gain, high linearity GaAs InGaP HBT MMIC Power amplifier covering 2.3 to 2.8 GHz. The amplifier provides 31 dB of gain and +33 dBm of saturated power from a single +5V supply. The power control pins (VEN1, 2, 3) can be used to reduce the RF output power/quiescent current, or for full power down of the PA. The integrated output power detector (VDET) is internally coupled and requires no external components. For +25 dBm OFDM output power (64 QAM, 54 Mbps), the HMC755LP4E achieves an error vector magnitude (EVM) of only 2.5% making it ideal for WiMAX/LTE/4G Applications. The amplifier is packaged in a compact QFN SMT package and requires a minimum of external matching components. Electrical Specifications, TA = +25 °C, Vcc1, 2, 3 = +5V, VEN1, 2, 3 = +5V, Vcs = +5V Parameter Min. Frequency Range Gain 28 Gain Variation Over Temperature Typ. Max. Units 2.3 - 2.8 GHz 31 dB 0.05 dB/ °C Input Return Loss 10 dB Output Return Loss 7 dB Output Power for 1dB Compression (P1dB) 31 dBm Saturated Output Power (Psat) 33 dBm Output Third Order Intercept (IP3) [1] 43 dBm Error Vector Magnitude @ 2.5 GHz (54 Mbps OFDM Signal @ +24.5 dBm Pout) 2.5 % Supply Current (Icc1 + Icc2 + Icc3) 28 400 480 600 mA Control Current (Ien1 + Ien2 + Ien3) 16 mA Bias Current (Ics) 12 mA [1] Two-tone output power of +25 dBm per tone, 1 MHz spacing. 9-1 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Gain vs. Temperature 40 40 30 35 30 S21 S11 S22 10 25 0 20 -10 15 -20 10 1.6 1.9 2.2 2.5 2.8 3.1 3.4 3.7 4 4.3 2 2.2 2.4 FREQUENCY (GHz) 2.6 2.8 3 3.2 FREQUENCY (GHz) Input Return Loss vs. Temperature Output Return Loss vs. Temperature 0 0 RETURN LOSS (dB) -5 -10 +25 C +85 C - 40 C -15 -20 +25 C +85 C - 40 C -5 -10 -15 2 2.2 2.4 2.6 2.8 3 2 3.2 2.2 2.4 2.6 2.8 3 3.2 FREQUENCY (GHz) FREQUENCY (GHz) Reverse Isolation vs. Temperature 0 -10 ISOLATION (dB) RETURN LOSS (dB) 9 +25 C +85 C - 40 C -20 +25 C +85 C - 40 C -30 Amplifiers - Linear & Power - SMT 20 GAIN (dB) RESPONSE (dB) Broadband Gain & Return Loss -40 -50 -60 -70 2 2.2 2.4 2.6 2.8 3 3.2 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-2 HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Psat vs. Temperature 40 35 35 Psat (dBm) 40 30 +25 C +85 C - 40 C 25 +25 C +85 C - 40 C 20 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 2.1 2.2 2.3 FREQUENCY (GHz) 2.5 2.6 2.7 2.8 2.9 3 Output IP3 vs. Temperature @ 2.4 GHz 50 50 45 45 IP3 (dB) IP3 (dBm) Output IP3 vs. Temperature @ 26 dBm 40 +25 C +85 C - 40 C 35 2.4 FREQUENCY (GHz) 40 +25 C +85 C - 40 C 35 30 30 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 18 19 20 FREQUENCY (GHz) 21 22 23 24 25 26 27 SINGLE TONE POUT (dBm) VDET Output Voltage vs. Temperature Power Compression @ 2.5 GHz 50 3 Pout (dBm), GAIN (dB), PAE (%) 3.5 +25 C +85 C - 40 C 2.5 2 1.5 1 0.5 0 40 30 20 Pout Gain PAE 10 0 13 17 21 25 OUTPUT POWER (dBm) 9-3 30 25 20 VDET (V) Amplifiers - Linear & Power - SMT 9 P1dB (dBm) P1dB vs. Temperature 29 33 -20 -15 -10 -5 0 5 INPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Gain & Power vs. Supply Voltage Noise Figure vs. Temperature 12 10 40 30 Gain P1dB IP3 8 6 +25 C +85 C - 40 C 2 20 0 4.5 5 5.5 2.2 2.3 2.4 2.5 SUPPLY VOLTAGE (V) 2.6 2.7 2.8 2.9 3 FREQUENCY (GHz) EVM vs. Frequency (54 Mbps OFDM Signal) Power Dissipation 6 7 5.5 6 Max Pdiss @ +85C 5 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz 2.8 GHz 5 EVM (%) 4.5 4 4 3 3.5 2 3 1 2.5 2 0 -20 -15 -10 -5 0 5 15 17 INPUT POWER (dBm) 19 21 23 25 27 OUTPUT POWER (dBm) EVM vs. Temperature @ 2.5 GHz (54 Mbps OFDM Signal) 7 6 5 EVM (%) POWER DISSIPATION (W) 9 4 4 Amplifiers - Linear & Power - SMT NOISE FIGURE (dB) GAIN (dB), P1dB (dBm), IP3 (dBm) 50 +25 C +85 C - 40 C 3 2 1 0 15 17 19 21 23 25 27 OUTPUT POWER (dBm) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-4 HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Typical Supply Current vs. Supply Voltage Absolute Maximum Ratings Amplifiers - Linear & Power - SMT 9 Collector Bias Voltage (Vcc1, Vcc2, Vcc3) 5.5V Control Voltage (VEN1, 2, 3) Vcc +0.5 Vcc (V) Icq (mA) 4.5 430 RF Input Power (RFIN)(Vcc = +5V) Junction Temperature +5 dBm 5.0 480 150 °C 5.5 Continuous Pdiss (T = 85 °C) (derate 80 mW/°C above 85 °C) 530 5.2 W Thermal Resistance (junction to ground paddle) 12.5 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish HMC755LP4E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL Rating MSL3 [2] Package Marking [1] H755 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 260 °C 9-5 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Pin Descriptions Function Description 1, 3, 5, 6, 12 - 14, 18, 19, 21, 22, 24 N/C These pins are not connected internally. However, all data shown herein was measured with these pins connected to RF/DC ground. 2 GND Ground: Backside of package has exposed metal paddle that must be connected to ground thru a short path. Vias under the device are required. 4 RFIN This pin is DC coupled and matched to 50 Ohms. 7 VCS DC power supply pin for bias circuitry. 8 - 10 VEN1 - 3 Power control pins. For max power these pins should be connected to 5V. This voltage can be reduced, or R1-R4 resistor values increased to reduce the quiescent current. For full power down, apply V <0.5V 11 VDET DC voltage output proportional to RFOUT signal. 15, 16, 17 RFOUT RF output and DC bias for the output stage. External RF matching, bypass capacitors, and pull up choke are required as shown in the application circuit. 20 Vcc2 Power supply voltage for the second amplifier stage. External bypass capacitors and pull up choke are required as shown in the application schematic. 23 Vcc1 Power supply voltage for the first amplifier stage. External bypass capacitors are required as shown in the application schematic. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9 Amplifiers - Linear & Power - SMT Pin Number 9-6 HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Evaluation PCB Amplifiers - Linear & Power - SMT 9 9-7 List of Materials for Evaluation PCB 123643 [1] Item Description Item Description J1, J2 PCB Mount SMA Connector U1 HMC755LP4E Power Amplifier J3, J4 2MM Molex Header PCB [2] 123641 Eval Board C1 - C10 100 pF Capacitor, 0402 Pkg. [1] Reference this number when ordering complete evaluation PCB C11 3 pF Capacitor Ultra Low ESD, 0603 Pkg. [2] Circuit Board Material: Rogers 4350 or Arlon 25FR C12 1.5 pF Capacitor Ultra Low ESD, 0603 Pkg. C13 - C15 1000 pF Capacitor, 0603 Pkg. C16 2.2 µF Capacitor, Tantalum C17 4.7 µF Capacitor, Tantalum C18 - C12 10000 pF Capacitor, 0402 Pkg. L1 10 nH Inductor, 0603 Pkg. R1 0 Ohm Resistor, 0402 Pkg. R2 200 Ohm Resistor, 0402 Pkg. R3 300 Ohm Resistor, 0402 Pkg. R4 130 Ohm Resistor, 0402 Pkg. The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes and the evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC755LP4E v03.1110 GaAs MMIC 1 WATT POWER AMPLIFIER, 2.3 - 2.8 GHz Application Circuit TL1 TL2 Impedance 28 Ohm 50 Ohm Physical Length 0.0465” 0.1950” Electrical Length @ 25 GHz Measurement 5.9° 22.6° Package edge to center of capacitor C11 Center of capacitor C11 to center of capacitor C12 Amplifiers - Linear & Power - SMT 9 PCB Material: 10 mil Rogers 4350 or Arlon 25FR For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 9-8