KTA2014 TRANSISTOR (PNP) SOT-323 FEATURES Low frequency power amplifier application z z Power switching application 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC* TJ Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current –Continuous Collector Power Dissipation Junction Temperature Tstg Storage Temperature Value -50 -50 -5 150 100 150 Units V V V mA mW -55-150 ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Symbol Parameter Test conditions Collector-base breakdown voltage V(BR)CBO IC=- 0.1mA, Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage Collector cut-off Emitter cut-off DC current current current gain Transition MAX IC= -1mA, IB=0 -50 V V(BR)EBO IE=-0.1mA, IC=0 -5 V ICBO VCB=-50V, IE=0 -0.1 μA IEBO VEB= -5V, IC=0 -0.1 μA hFE VCE=-6V,IC=-2mA 70 IC=-100mA, IB= -10mA VCE=-10V, IC=-1mA, Collector output capacitance Cob VCB=-10V, IE=0 f=1MHz Noise Figure NF VCE=-6V, IC=-0.1mA f=1KHz,Rg=10KΩ 400 -0.3 80 Range MARKING 7 pF 10 dB O(2) Y(4) GR(6) 70-140 120-240 200-400 SO SY SG １ JinYu semiconductor V MHz CLASSIFICATION OF hFE Rank UNIT V fT frequency TYP -50 VCE(sat) Collector-emitter saturation voltage IE=0 MIN www.htsemi.com Ｄａｔｅ：２０１１／０５ KTA2014 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ KTA2014 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５