Inchange Semiconductor Product Specification 2SC1905 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High breakdown voltage ・Large collector power dissipation APPLICATIONS ・Color TV horizontal deflection driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 350 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 7.5 V IC Collector current 200 mA ICM Collector current-peak 400 mA PC Collector power dissipation 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC1905 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=100μA ; IE=0 350 V V(BR)EBO Emitter-base breakdown voltage IE=100μA ; IC=0 7.5 V Collector-emitter saturation voltage IC=50mA; IB=5mA ICBO Collector cut-off current IEBO hFE VCEsat CONDITIONS MIN TYP. MAX UNIT 1.0 V VCB=200V ;IE=0 2 μA Emitter cut-off current VEB=5V; IC=0 2 μA DC current gain IC=10m A ; VCE=10V 40 fT Transition frequency IC=10m A ; VCE=30V 50 COB Output capacitance IE=0 ; VCB=50V; f=1MHz tstg Storage time IC=100mA; IB1=10mA; IB2=0 2 5 250 MHz 4.5 pF 7.5 μs Inchange Semiconductor Product Specification 2SC1905 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3