isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain: hFE= 4000(Min) @IC= 3A ·Low Collector Saturation Voltage: VCE(sat)= 1.5V(Max.) @ IC= 3A APPLICATIONS ·Audio power amplifiers ·Relay& solenoid drivers ·Motor controls ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT Collector-Base Voltage 60 V VCEO(SUS) Collector-Emitter Voltage 50 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous 0.2 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ -55~150 ℃ VCBO B Tstg PARAMETER Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.0 ℃/W isc Website：www.iscsemi.cn 2SD833 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD833 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0 50 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 0.1mA; IB= 0 60 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 3mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA 2.5 V ICBO Collector Cutoff Current VCB= 60V; IE=0 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC=0 3.0 mA hFE DC Current Gain IC= 3A; VCE= 3V isc Website：www.iscsemi.cn B B B 2 4000