isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO =-60 V ·DC Current Gain— : hFE = 750(Min) @ IC=-1.5 A ·Complement to Type MJE800 APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A IB Base Current -0.1 A PC Collector Power Dissipation TC=25℃ 40 W Ti Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.13 ℃/W isc Website：www.iscsemi.cn MJE700 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor MJE700 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC=-50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-1.5A; IB= -30mA -2.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -4A; IB=-40mA -3.0 V VBE(on)-1 Base-Emitter On Voltage IC= -1.5A; VCE= -3V -2.5 V VBE(on)-2 Base-Emitter On Voltage IC= -4A; VCE= -3V -3.0 V ICEO Collector Cutoff Current VCE=-60V; IB= 0 -0.1 mA ICBO Collector Cutoff Current VCB=-60V; IE= 0 VCB=-60V; IE= 0;TC= 100℃ -0.1 -0.5 mA IEBO Emitter Cutoff Current VEB=-5V; IC= 0 -2.0 mA hFE-1 DC Current Gain IC=- 1.5 A ; VCE= -3V 750 hFE-2 DC Current Gain IC= -4A ; VCE= -3V 100 isc Website：www.iscsemi.cn CONDITIONS MIN MAX -60 B B UNIT V