isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 200V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 1A ·High DC Current Gain : hFE= 1000(Min) @ IC= 1A, VCE= 4V APPLICATIONS ·Igniter, relay and general purpose applications. SYMBOL ww PARAMETER w VALUE UNIT 200 V 200 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ -55~150 ℃ B Tstg Storage Temperature Range isc Website：www.iscsemi.cn n c . i m e s c s .i ABSOLUTE MAXIMUM RATINGS(Ta=25℃) 2SD2016 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD2016 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1.5mA 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 1.5mA 2.0 V ICBO Collector Cutoff Current VCB= 200V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 1A; VCE= 4V fT COB CONDITIONS MIN TYP. 200 B n c . i m e UNIT V B s c s i . w MAX 1000 15000 Current-Gain—Bandwidth Product IE= -0.1A; VCE= 12V 90 MHz Output Capacitance VCB= 10V, ftest= 1MHz 40 pF w w isc Website：www.iscsemi.cn 2