isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDX84/A/B/C DESCRIPTION ·High DC Current Gain: hFE= 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = -45V(Min)- BDX84; -60V(Min)- BDX84A -80V(Min)- BDX84B; -100V(Min)- BDX84C APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BDX84 Collector-Base Voltage VEBO -60 V BDX84B VCEO n c . i m e -45 s c s i . w BDX84A VCBO UNIT w w -80 BDX84C -100 BDX84 -45 BDX84A -60 BDX84B -80 BDX84C -100 Collector-Emitter Voltage V Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak -15 A IB Base Current -250 mA PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case isc Website：www.iscsemi.cn MAX UNIT 1.4 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor BDX84/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL VCEO(SUS) PARAMETER Collector-Emitter Sustaining Voltage CONDITIONS MIN BDX84 -45 BDX84A -60 TYP. MAX IC= -100mA; IB= 0 UNIT V BDX84B -80 BDX84C -100 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -10mA -2.0 V VBE(on)-1 Base-Emitter On Voltage IC= -5A; VCE= -3V -2.8 V VBE(on)-2 Base-Emitter On Voltage IC= -10A; VCE= -3V -4.5 V w ICEO m e s isc -0.5 -3.0 BDX84A VCE= -60V; VBE= 1.5V VCE= -60V; VBE= 1.5V; TC= 150℃ -0.5 -3.0 BDX84B VCE= -80V; VBE= 1.5V VCE= -80V; VBE= 1.5V; TC= 150℃ -0.5 -3.0 BDX84C VCE= -100V; VBE= 1.5V VCE= -100V; VBE= 1.5V; TC= 150℃ -0.5 -3.0 BDX84 VCE= -20V; IB= 0 BDX84A VCE= -30V; IB= 0 . w w Collector Cutoff Current Collector Cutoff Current n c . i VCE= -45V; VBE= 1.5V VCE= -45V; VBE= 1.5V; TC= 150℃ BDX84 ICEV B B B BDX84B VCE= -40V; IB= 0 BDX84C VCE= -50V; IB= 0 -1.0 mA -5.0 mA B B IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain IC= -1A; VCE= -3V 750 hFE-2 DC Current Gain IC= -5A; VCE= -3V 1000 hFE-3 DC Current Gain IC= -10A; VCE= -3V 250 isc Website：www.iscsemi.cn mA 2