KEXIN FZT790A

Transistors
SMD Type
PNP Silicon Planar Medium
Power High Gain Transistor
FZT790A
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
Low equivalent on-resistance; RCE(sat) 125mÙ at 2A.
Gain of 200 at IC=1 Amps and Very low saturation voltage.
+0.1
3.00-0.1
+0.15
1.65-0.15
+0.2
3.50-0.2
+0.2
6.50-0.2
Features
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1
1 base
3
2
+0.1
0.70-0.1
2.9
4.6
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Continuous collector current
ICM
-6
A
Peak pulse current
IC
-3
A
Ptot
2
W
Tj,Tstg
-55 to +150
Power dissipation
Operating and storage temperature range
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1
Transistors
SMD Type
FZT790A
Electrical Characteristics Ta = 25
Parameter
Symbol
Min
Typ
-70
Max
Unit
Breakdown Voltages
V(BR)CBO IC=-100ìA
-50
Breakdown Voltages
V(BR)CEO IC=-10mA
-40
-60
V
Breakdown Voltages
V(BR)EBO IE=-100ìA
-5
-8.5
V
Collector Cut-Off Current
ICBO
VCB=-30V
VCB=-30V,Ta = 100
Emitter Cut-Off Current
IEBO
VEB=-4V
V
-0.1
-10
ìA
-0.1
ìA
Collector-Emitter Saturation Voltage *
IC=-500mA, IB=-5mA
VCE(sat) IC=-1A, IB=-10mA
IC=-2A, IB=-50mA
-0.15 -0.25
-0.30 -0.45
-0.40 -0.75
V
Base-Emitter Saturation Voltage *
VBE(sat) IC=-1A, IB=-10mA
-0.8
V
Base-EmitterTurn-OnVoltage *
VBE(on) IC=-1A, VCE=-2V
Static Forward Current Transfer Ratio
Transitional frequency
hFE
fT
-1.0
-0.75
IC=-10mA, VCE=-2V
300
IC=-500mA, VCE=-2V*
250
IC=-1A, VCE=-2V*
200
IC=-2A, VCE=-2V*
150
IC=-50mA, VCE=-5V, f=50MHz
100
V
800
MHz
Output capacitance
Cobo
VCB=-10V, f=1MHz
24
pF
Turn-on time
t(on)
IC=-500mA, VCC=-10V
35
ns
Turn-off time
t(off)
IB1=IB2=-50mA
600
ns
* Pulse test: tp = 300 ìs; d
0.02.
Marking
Marking
2
Testconditons
FZT790A
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