SavantIC Semiconductor Product Specification 2SC3060 Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Ultra-fast switching ·Wide area of safe operation ·High breakdown voltage APPLICATIONS ·Switching regulators ·Motor controls ·Ultrasonic oscillators ·Class C and D amplifiers ·Deflection circuits PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 850 V VEBO Emitter-base voltage Open collector 7 V 5 A 8 A 3 A 150 W IC Collector current ICP Collector current-pulse IB Base current PC Collector power dissipation Tj Junction temperature 175 Tstg Storage temperature -65~175 PW/25µs,Duty cycle/50% TC=25 SavantIC Semiconductor Product Specification 2SC3060 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=> 850 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1200 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCE(sat) Collector-emitter saturation voltage IC=2A; IB=0.4A 1.5 V VBE(sat) Base-emitter saturation voltage IC=2A; IB=0.4A 2.0 V VCB=1000V; IE=0 100 µA 1 mA 100 µA ICBO CONDITIONS MIN TYP. MAX UNIT Collector cut-off current VCB=1000V; IE=0, TC=100 IEBO Emitter cut-off current VEB=6V; IC=0 hFE DC current gain IC=2A ; VCE=5V fT Transition frequency IC=0.5A ; VCE=10V 15 MHz Cob Output capacitance IE=0; VCB=10V,f=1MHz 120 pF 10 30 Switching times tr tstg tf Rise time Storage time VCC=400V; IC=2A IB1=0.2A;IB2=-0.6A; Fall time 2 0.5 µs 3.5 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 2SC3060