Inchange Semiconductor Product Specification BD311 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Excellent safe operating area ・Complement to type BD312 APPLICATIONS ・Designed for power amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 60 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 10 A ICM Collector current(peak) 20 A IB Base current 4 A PT Total power dissipation 115 W Tj Junction temperature -65~200 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 1.52 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification BD311 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ; IB=0 VCEsat Collector-emitter saturation voltage IC=5A ;IB=0.5A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 1.8 V VBE Base-emitter on voltage IC=5A ;VCE=4V 1.5 V ICBO Collector cut-off current VCB=rated;IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=4V 25 hFE-2 DC current gain IC=10A ; VCE=4V 5 Transition frequency IC=0.5A ; VCE=10V,f=1MHz 4 fT CONDITIONS 2 MIN TYP. MAX 60 UNIT V MHz Inchange Semiconductor Product Specification BD311 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3