CHENMKO ENTERPRISE CO.,LTD 2SB1182PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. (DPAK) DPAK .050 (1.27) .030 (0.77) * PC= 1.5 W (mounted on ceramic substrate). * High saturation current capability. CONSTRUCTION .094 (2.38) .086 (2.19) .022 (0.55) .018 (0.45) .028 (0.70) .019 (0.50) .035 (0.90) .181 (4.60) .024 (0.60) .268 (6.80) .252 (6.40) .023 (0.58) .018 (0.46) C (3) CIRCUIT .020 (0.51) .394 (10.00) .354 (9.00) (1) (3) (2) .050 (1.27) .020 (0.51) .110 (2.80) .087 (2.20) .228(5..80) .217 (5.40) * PNP Switching Transistor 1 Base 2 Emitter (1) B 3 Collector ( Heat Sink ) E (2) DPAK Dimensions in inches and (millimeters) MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. MAX. UNITS Collector - Base Voltage RATINGS Open Emitter CONDITION VCBO - -40 Volts Collector - Emitter Voltage Open Base VCEO - -32 Volts Emitter - Base Voltage Open Collector VEBO - -5 Volts IC - -2 Amps Peak Collector Current ICM - -3 Amps Peak Base Current IBM - -0.5 Amps PTOT - 1500 mW TSTG -55 +150 o C C C Collector Current DC Total Power Dissipation TA ≤ 25OC; Note 1 Storage Temperature Junction Temperature Operating Ambient Temperature Note 1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t. 2. Measured at Pulse Width 300 us, Duty Cycle 2%. TJ - +150 o TAMB -55 +150 o 2007-6 RATING CHARACTERISTIC CURVES ( 2SB1182PT ) CHARACTERISTICS ( At TA = 25oC unless otherwise noted ) SYMBOL MIN. TYPE MAX. UNITS Collector Cut-off Current PARAMETERS IE=0; VCB=-20V ICBO - - -1.0 uA Emitter Cut-off Current IC=0; VEB=-4V IEBO - - -1.0 uA DC Current Gain VCE=-3V; Note 1 IC=-0.5A hFE 82 - 390 Collector-Emitter Saturation Voltage IC=-2A; IB=-0.2A VCEsat - -0.3 -0.5 Volts Base-Emitter Saturatio Voltage IC=-2A; IB=-0.2A VBEsat - -1.0 -1.5 Volts Collector Capacitance IE=ie=0; VCB=-10V; f=1MHz CC - 55 - pF Transition Frequency IC=-0.1A; VCE=-5.0V; f=100MHz fT - 100 - MHz Note : 1. Pulse test: tp ≤ 300uSec; δ ≤ 0.02. CONDITION RATING CHARACTERISTIC CURVES ( 2SB1182PT ) Typical Electrical Characteristics Figure 2. Cutoff Frequency - IC 3000 3000 1000 1000 V CE =-5V CUTOFF FREQUENCY (MHz) COLLECTOR CAPACITANCE CC (pF) Figure 1. CC - Reverse VCB 100 10 1 -0.1 -0.3 -1.0 -3.0 -10 -30 100 10 1 -1 -100 -10 COLLECTOR-BASE REVERSE BIAS VOLTAGE V CB (V) COMMON EMITTER V CE =-2V DC CURRENT GAIN hFE 500 300 100 50 30 COLLECTOR POWER DISSIPATION PC (W) 1.5 1000 1.4 (1) Mounted on ceramic substrate ( 250mm 2x0.8t ) (2) No heat sink (1) 1.2 1.0 0.8 (2) 0.6 0.4 0.2 0 10 -10 -30 -100 -300 -1000 0 -3000 20 40 Figure 5. VCE(sat) - IC 80 100 120 140 160 Figure 6. VBE(sat) - IC -1 -10 COMMON EMITTER BASE-EMITTER SATURATION VOLTAGE VBE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 60 AMBIENT TEMPERATURE T A ( OC) COLLECTOR CURRENT I C (mA) I C /I B =10 -0.3 -0.1 -0.05 -0.03 -0.01 -10 -1000 Figure 4. PC - TA Figure 3. hFE - IC -0.5 -100 COLLECTOR CURRENT I C (mA) -30 -100 -300 COLLECTOR CURRENT I C (mA) -1000 -3000 COMMON EMITTER -5 I C /I B =10 -3 -1 -0.5 -0.3 -0.1 -10 -30 -100 -300 COLLECTOR CURRENT I C (mA) -1000 -3000